Vishay 20ETFS User Manual

20ETF..S Soft Recovery Series
Vishay High Power Products
Surface Mountable Fast
Soft Recovery Rectifier Diode, 20 A
FEATURES/DESCRIPTION
Base
common
cathode
+
2
The 20ETF..S soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
D2PAK (SMD-220)
1
--
Anode
3 Anode
This product series has been designed and qualified for
industrial level.
PRODUCT SUMMARY
VF at 10 A < 1.2 V
I
FSM
V
RRM
300 A
200 to 600 V
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
• Input rectifications where severe restrictions on conducted
EMI should be met
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
Sinusoidal waveform 20 A
200 to 600 V
300 A
10 A, TJ = 25 °C 1.2 V
1 A, 100 A/µs 60 ns
Range - 40 to 150 °C
VOLTAGE RATINGS
V
, MAXIMUM PEAK
PART NUMBER
20ETF02S 200 300
20ETF06S 600 700
RRM
REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
520ETF04S 400 500
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle non-repetitive surge current
Maximum I
Maximum I
Document Number: 93143 For technical questions, contact: diodes-tech@vishay.com Revision: 12-Jun-08 1
t for fusing I2t
t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 4420 A2√s
F(AV)
I
FSM
TC = 97 °C, 180° conduction half sine wave 20
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 300
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 442
applied 250
RRM
applied 316
RRM
A
A
s
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20ETF..S Soft Recovery Series
Vishay High Power Products
Surface Mountable Fast
Soft Recovery Rectifier Diode, 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
F(TO)
RM
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
Reverse recovery current I
rr
rr
Reverse recovery charge Q
Snap factor S Typical 0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance junction to ambient (PCB mount)
Soldering temperature T
Approximate weight
Marking device Case style D
Note
(1)
When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994
, T
T
J
R
thJC
R
thJA
20 A, TJ = 25 °C 1.30
60 A, T
= 25 °C 1.67
J
t
12.5 mΩ
TJ = 150 °C 0.9 V
rr
Stg
TJ = 25 °C
T
= 150 °C 5.0
J
IF at 20 Apk
100 A/µs 25 °C
V
= Rated V
R
RRM
160 ns
10 A
1.25 µC
- 40 to 150 °C
DC operation 0.9
(1)
S
240 °C
0.07 oz.
PAK (SMD-220)
0.1
I
FM
t
rr
t
atb
dir
dt
I
RM(REC)
40
2g
20ETF02S
20ETF04S
20ETF06S
V
mA
Q
°C/W
t
rr
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Document Number: 93143
2 Revision: 12-Jun-08
20ETF..S Soft Recovery Series
150
140
130
120
110
100
Temperature (°C)
90
Maximum Allowable Case
80
70
06
150
140
130
120
Surface Mountable Fast
Soft Recovery Rectifier Diode, 20 A
20ETF.. Series
(DC) = 0.9 K/W
R
thJC
Ø
Conduction angle
60°
30°
28
4
12 14
10 22
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
20ETF.. Series
(DC) = 0.9 K/W
R
thJC
Conduction period
120°
90°
16 18 20
Ø
180°
45
40
35
30
25
20
15
Power Loss (W)
10
Maximum Average Forward
5
0
0
Fig. 4 - Forward Power Loss Characteristics
300
250
200
Vishay High Power Products
DC 180° 120° 90° 60° 30°
RMS limit
10 205
15
Average Forward Current (A)
At any rated load condition and with rated V
applied following surge.
RRM
Ø
Conduction period
20ETF.. Series
= 150 °C
T
J
25
30
Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s
35
110
100
Temperature (°C)
Maximum Allowable Case
90
80
30°
60°
90°
120°
530
025
15
10 20
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
35
30
25
20
15
Power Loss (W)
10
5
Maximum Average Forward
0
0
180° 120° 90° 60° 30°
RMS limit
10 155
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
180°
DC
Ø
Conduction angle
20ETF.. Series
= 150 °C
T
J
20
150
Forward Current (A)
Peak Half Sine Wave
100
20ETF.. Series
50
35
1 10 100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
550
500
450
400
350
300
250
200
Forward Current (A)
Peak Half Sine Wave
150
100
50
25
0.001 0.01 1
Maximum non-repetitive surge current versus pulse train duration.
Initial TJ = 150 °C No voltage reapplied Rated V
20ETF.. Series
0.1
RRM
reapplied
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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Revision: 12-Jun-08 3
20ETF..S Soft Recovery Series
Vishay High Power Products
1000
100
10
Instantaneous Forward Current (A)
1
012 5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.20
0.15
0.10
- Maximum Reverse
0.05
Recovery Time (µs)
rr
t
0
0 200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
TJ = 25 °C T
IFM = 30 A
IFM = 20 A
= 150 °C
J
20ETF.. Series
34
20ETF.. Series
= 25 °C
T
J
IFM = 10 A
IFM = 5 A
IFM = 1 A
Surface Mountable Fast
Soft Recovery Rectifier Diode, 20 A
4.0 20ETF.. Series
= 25 °C
J
3.5
3.0
2.5
2.0
1.5
- Maximum Reverse
1.0
rr
Recovery Charge (µC)
Q
0.5
Fig. 10 - Recovery Charge Characteristics, T
10
- Maximum Reverse
rr
Recovery Charge (µC)
Q
Fig. 11 - Recovery Charge Characteristics, T
= 25 °C
T
J
0
0 200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
20ETF.. Series
9
= 150 °C
T
J
8
7
6
5
4
3
2
1
0
0 200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
= 25 °C
J
= 150 °C
J
- Maximum Reverse
rr
t
0.5
0.4
0.3
0.2
Recovery Time (µs)
0.1
0
0 200 400 600 800 1000
20ETF.. Series
= 150 °C
T
J
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
IFM = 30 A
= 20 A
I
FM
I
= 10 A
FM
I
= 5 A
FM
= 1 A
I
FM
= 150 °C
J
70
20ETF.. Series
60
50
40
30
20
- Maximum Reverse Recovery Current (A)
rr
I
10
= 25 °C
T
J
0
0 200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
= 25 °C
J
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Document Number: 93143
4 Revision: 12-Jun-08
20ETF..S Soft Recovery Series
Surface Mountable Fast
Vishay High Power Products
Soft Recovery Rectifier Diode, 20 A
100
20ETF.. Series
= 150 °C
T
J
80
60
40
- Maximum Reverse Recovery Current (A)
rr
20
I
0
0 200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
Steady state value
(DC operation)
1
0.1
0.01
- Transient Thermal Impedance (K/W)
thJC
Z
Single pulse
Fig. 14 - Thermal Impedance Z
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
Square Wave Pulse Duration (s)
Characteristics
thJC
20ETF.. Series
10.0001 0.001 0.01 0.1
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Revision: 12-Jun-08 5
20ETF..S Soft Recovery Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
20 E T F 06 S TRL -
1 - Current rating (20 = 20 A)
2 - Circuit configuration:
E = Single diode
3 - Package:
T = D
4 - Type of silicon:
F = Fast soft recovery rectifier
5 - Voltage code x 100 = V
6 - S = Surface mountable
7 -
8 -
Surface Mountable Fast
Soft Recovery Rectifier Diode, 20 A
51324678
2
PAK (TO-220AC)
02 = 200 V
RRM
None = Tube
TRR = Tape and reel (right oriented)
TRL = Tape and reel (left oriented)
None = Standard production
PbF = Lead (Pb)-free
04 = 400 V 06 = 600 V
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95046
Part marking information http://www.vishay.com/doc?95044
Packaging information http://www.vishay.com/doc?95032
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Document Number: 93143
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com Revision: 12-Mar-07 1
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