Vishay 20ETFPbF User Manual

TO-220AC

cathode

1

Cathode

20ETF..PbF Soft Recovery Series

Fast Soft Recovery

Rectifier Diode, 20 A

FEATURES/DESCRIPTION

The 20ETF..PbF fast soft recovery rectifier series

Base

2

3

Anode

has been optimized for combined short reverse
recovery time and low forward voltage drop.

The glass passivation ensures stable reliable
operation in the most severe temperature and
power cycling conditions.

This product series has been designed and qualified for
industrial level and lead (Pb)-free.

Vishay High Power Products

Pb-free

Available

RoHS*

COMPLIANT

PRODUCT SUMMARY

VF at 10 A < 1.2 V

I

FSM

V

RRM

300 A

200 to 600 V

APPLICATIONS

• Output rectification and freewheeling in inverters,
choppers and converters

• Input rectifications where severe restrictions on conducted
EMI should be met

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

V

RRM

I

F(AV)

I

FSM

t

rr

V

F

T

J

Range 200 to 600 V

Sinusoidal waveform 20

300

1 A, 100 A/µs 60 ns

10 A, TJ = 25 °C 1.2 V

Range - 40 to 150 °C

A

VOLTAGE RATINGS

V

, MAXIMUM PEAK REVERSE

PART NUMBER

20ETF02PbF 200 300

20ETF06PbF 600 700

RRM

VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

520ETF04PbF 400 500

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

2

Maximum I

Maximum I

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94096 For technical questions, contact: [e-mail]
Revision: 15-Apr-08 1

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 4420 A2√s

F(AV)

I

FSM

TC = 97 °C, 180° conduction half sine wave 20

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 300

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 442

applied 250

RRM

applied 316

RRM

A

2

A

s

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20ETF..PbF Soft Recovery Series

Vishay High Power Products

Fast Soft Recovery

Rectifier Diode, 20 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

FM

t

F(TO)

RM

RECOVERY CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Reverse recovery time t

Reverse recovery current I

rr

rr

Reverse recovery charge Q

Snap factor S Typical 0.6

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

minimum 6 (5)

maximum 12 (10)

Marking device Case style TO-220AC 20ETF06

T

, T

J

R

thJC

R

thJA

R

thCS

20 A, TJ = 25 °C 1.3 V

12.5 mΩ

0.9 V

0.1

- 40 to 150 °C

rr

Stg

TJ = 150 °C

TJ = 25 °C

T

= 150 °C 5.0

J

IF at 20 Apk

100 A/µs
25 °C

V

= Rated V

R

160 ns

10 A

1.25 µC

RRM

DC operation 0.9

62

Mounting surface, smooth and greased 0.5

2g

0.07 oz.

I

FM

t

rr

t

atb

dir

dt

kgf · cm

(lbf · in)

mA

I

RM(REC)

°C/W

t

Q

rr

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Document Number: 94096

2 Revision: 15-Apr-08

20ETF..PbF Soft Recovery Series

150

140

130

120

110

100

Temperature (°C)

90

Maximum Allowable Case

80

70

150

140

130

120

110

100

Temperature (°C)

Maximum Allowable Case

90

80

Fast Soft Recovery

Rectifier Diode, 20 A

20ETF.. Series

(DC) = 0.9 K/W

R

thJC

Ø

Conduction angle

60°

30°

28

06

4

12 14 16 18

10 22

Average Forward Current (A)

Fig. 1 - Current Rating Characteristics

20ETF.. Series

(DC) = 0.9 K/W

R

thJC

30°

60°

90°

120°

530

025

15

10 20

Average Forward Current (A)

Fig. 2 - Current Rating Characteristics

120° 180°

90°

20

Ø

Conduction period

180°

DC

35

45

40

35

30

25

20

15

Power Loss (W)

10

Maximum Average Forward

300

250

200

150

Forward Current (A)

Peak Half Sine Wave

100

50

Vishay High Power Products

DC
180°
120°
90°
60°
30°

RMS limit

5

0

0

10 20

5

15

Average Forward Current (A)

Fig. 4 - Forward Power Loss Characteristics

At any rated load condition and with
rated V

20ETF.. Series

1 10 100

applied following surge.

RRM

Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

Number of Equal Amplitude Half Cycle

Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

Ø

Conduction period

20ETF.. Series

= 150 °C

T

J

30

25

35

35

30

25

20

15

Power Loss (W)

10

Maximum Average Forward

180°
120°
90°
60°
30°

5

0

0

RMS limit

10 155

Ø

Conduction angle

20ETF.. Series

= 150 °C

T

J

20

Average Forward Current (A)

Fig. 3 - Forward Power Loss Characteristics

25

550

500

450

400

350

300

250

200

Forward Current (A)

Peak Half Sine Wave

150

100

50

Maximum non-repetitive surge current
versus pulse train duration.

Initial TJ = 150 °C
No voltage reapplied
Rated V

20ETF.. Series

0.001 0.01 1

0.1

RRM

reapplied

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

Document Number: 94096 For technical questions, contact: [e-mail]

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Revision: 15-Apr-08 3

20ETF..PbF Soft Recovery Series

Vishay High Power Products

1000

100

10

Instantaneous Forward Current (A)

1

0.20

20ETF.. Series

= 25 °C

T

J

0.15

IFM = 30 A

IFM = 20 A

IFM = 10 A

IFM = 5 A

IFM = 1 A

- Maximum Reverse

rr

t

0.10

0.05

Recovery Time (µs)

0

0 200 400 600 800 1000

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 8 - Recovery Time Characteristics, T

Fast Soft Recovery

Rectifier Diode, 20 A

TJ = 25 °C

= 150 °C

T

J

20ETF.. Series

012345

Instantaneous Forward Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

70

20ETF.. Series

60

= 25 °C

T

J

50

40

30

20

Recovery Current (A)

rr

10

0

0 200 400 600 800 1000

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 10 - Recovery Charge Characteristics, T

= 25 °C

J

- Maximum Reverse
I

IFM = 30 A

IFM = 20 A

IFM = 10 A

IFM = 5 A

IFM = 1 A

J

= 25 °C

- Maximum Reverse

rr

t

0.5

0.4

0.3

0.2

Recovery Time (µs)

0.1

0

0 200 400 600 800 1000

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 9 - Recovery Time Characteristics, T

20ETF.. Series

= 150 °C

T

J

IFM = 30 A
I

= 20 A

FM

I

= 10 A

FM

= 5 A

I

FM

= 1 A

I

FM

= 150 °C

J

100

20ETF.. Series

= 150 °C

T

J

0 200 400 600 800 1000

- Maximum Reverse
Recovery Current (A)

rr

I

80

60

40

20

0

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 11 - Recovery Charge Characteristics, T

IFM = 30 A

IFM = 20 A

IFM = 10 A

IFM = 5 A

IFM = 1 A

= 150 °C

J

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Document Number: 94096

4 Revision: 15-Apr-08

20ETF..PbF Soft Recovery Series

Fast Soft Recovery

Vishay High Power Products

Rectifier Diode, 20 A

- Maximum Reverse

rr

Q

Recovery Charge (µC)

4.0

20ETF.. Series

3.5

3.0

2.5

2.0

1.5

1.0

0.5

= 25 °C

T

J

0

0 200 400 600 800 1000

IFM = 30 A

IFM = 20 A

IFM = 10 A

IFM = 5 A

IFM = 1 A

- Maximum Reverse
Q

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Fig. 13 - Recovery Current Characteristics, TJ = 150 °C

10

rr

10

20ETF.. Series

9

= 150 °C

T

J

8

7

6

5

4

3

Recovery Charge (µC)

2

1

0

0 200 400 600 800 1000

dI/dt - Rate of Fall of Forward Current (A/µs)

Steady state value

(DC operation)

IFM = 30 A

IFM = 20 A

IFM = 10 A

IFM = 5 A

IFM = 1 A

1

0.1

0.01

- Transient Thermal Impedance (K/W)

thJC

Z

Single pulse

Fig. 14 - Thermal Impedance Z

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

Square Wave Pulse Duration (s)

Characteristics

thJC

20ETF.. Series

10.0001 0.001 0.01 0.1

Document Number: 94096 For technical questions, contact: [e-mail]

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Revision: 15-Apr-08 5

20ETF..PbF Soft Recovery Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

20 E T F 06 PbF

1 - Current rating (20 = 20 A)

2 - Circuit configuration:

3 - Package:

4 - Type of silicon:

5 - Voltage code x 100 = V

6 - None = Standard production

Fast Soft Recovery

Rectifier Diode, 20 A

51324

E = Single diode

T = TO-220AC

F = Fast soft recovery rectifier

RRM

PbF = Lead (Pb)-free

6

02 = 200 V
04 = 400 V
06 = 600 V

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95221

Part marking information http://www.vishay.com/doc?95224

www.vishay.com For technical questions, contact: [e-mail]
6 Revision: 15-Apr-08

Document Number: 94096

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

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Revision: 12-Mar-07 1