Vishay 20ETFFP User Manual

20ETF..FP Soft Recovery Series

Fast Soft Recovery

Rectifier Diode, 20 A

FEATURES/DESCRIPTION

Base

cathode

2

The 20ETF..FP soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.

Vishay High Power Products

TO-220 FULL-PAK

1

Cathode

Anode

3

The fully isolated package (V
approved.

= 2500 V

INS

) is UL E78996

RMS

This product series has been designed and qualified for
industrial level.

PRODUCT SUMMARY

VF at 10 A < 1.2 V

I

FSM

V

RRM

300 A

200 to 600 V

APPLICATIONS

• Output rectification and freewheeling in inverters,
choppers and converters

• Input rectifications where severe restrictions on conducted
EMI should be met

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

I

FSM

V

F

t

rr

T

J

Sinusoidal waveform 20 A

200 to 600 V

300 A

10 A, TJ = 25 °C 1.2 V

1 A, 100 A/µs 60 ns

- 40 to 150 °C

VOLTAGE RATINGS

, MAXIMUM PEAK REVERSE

V

PART NUMBER

RRM

20ETF02FP 200 300

20ETF06FP 600 700

VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

520ETF04FP 400 500

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle non-repetitive
surge current

2

Maximum I

Maximum I

Document Number: 93142 For technical questions, contact: [e-mail]
Revision: 12-Jun-08 1

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 4420 A2√s

F(AV)

I

FSM

TC = 94 °C, 180° conduction half sine wave 20

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 300

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 442

applied 250

RRM

applied 316

RRM

A

2

A

s

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20ETF..FP Soft Recovery Series

Vishay High Power Products

Fast Soft Recovery

Rectifier Diode, 20 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

FM

t

F(TO)

RM

RECOVERY CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Reverse recovery time t

Reverse recovery current I

Reverse recovery charge Q

rr

rr

rr

Snap factor S Typical 0.6

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

minimum 6 (5)

maximum 12 (10)

Marking device Case style TO-220 FULL-PAK 20ETF06FP

, T

T

J

R

thJC

R

thJA

R

thCS

20 A, TJ = 25 °C 1.30

60 A, T

= 25 °C 1.67

J

12.5 mΩ

TJ = 150 °C 0.9 V

Stg

TJ = 25 °C

T

= 150 °C 5.0

J

IF at 20 Apk

100 A/µs
25 °C

V

= Rated V

R

160 ns

10 A

1.25 µC

RRM

0.1

- 40 to 150 °C

DC operation 1.5

62

Mounting surface, smooth and greased 1.5

2g

0.07 oz.

I

FM

t

rr

t

atb

dir

dt

kgf · cm

(lbf · in)

V

mA

I

RM(REC)

°C/W

t

Q

rr

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Document Number: 93142

2 Revision: 12-Jun-08

20ETF..FP Soft Recovery Series

150

140

130

120

110

100

Temperature (°C)

Maximum Allowable Case

90

80

0

150

140

130

120

110

100

Temperature (°C)

Maximum Allowable Case

90

80

025

Fast Soft Recovery

Rectifier Diode, 20 A

20ETF.. Series

(DC) = 1.5 K/W

R

thJC

Ø

Conduction angle

60°

30°

10520

Average Forward Current (A)

Fig. 1 - Current Rating Characteristics

20ETF.. Series
R

30°

90°

60°

120°

530

15

10 20

Average Forward Current (A)

Fig. 2 - Current Rating Characteristics

120° 180°

90°

15

(DC) = 1.5 K/W

thJC

Conduction period

180°

25

Ø

DC

35

Vishay High Power Products

45

40

35

30

25

20

15

Power Loss (W)

10

Maximum Average Forward

5

0

300

250

200

150

Forward Current (A)

Peak Half Sine Wave

100

50

Fig. 5 - Maximum Non-Repetitive Surge Current

DC
180°
120°
90°
60°
30°

RMS limit

Conduction period

20ETF.. Series
T

10 15

520

0

Average Forward Current (A)

Fig. 4 - Forward Power Loss Characteristics

At any rated load condition and with
rated V

20ETF.. Series

1 10 100

applied following surge.

RRM

Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

Number of Equal Amplitude Half Cycle

Current Pulses (N)

Ø

= 150 °C

J

25

35

30

35

30

25

20

15

Power Loss (W)

10

5

Maximum Average Forward

0

0

Fig. 3 - Forward Power Loss Characteristics

180°
120°
90°
60°
30°

RMS limit

Conduction angle

20ETF.. Series
T

= 150 °C

J

10 155

Average Forward Current (A)

Ø

20

25

550

500

450

400

350

300

250

200

Forward Current (A)

Peak Half Sine Wave

150

100

50

0.001 0.01 1

Maximum non-repetitive surge current
versus pulse train duration.

Initial TJ = 150 °C
No voltage reapplied
Rated V

20ETF.. Series

0.1

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

RRM

reapplied

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Revision: 12-Jun-08 3

20ETF..FP Soft Recovery Series

Vishay High Power Products

1000

100

10

Instantaneous Forward Current (A)

1

012 5

Instantaneous Forward Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

0.20

0.15

0.10

- Maximum Reverse

0.05

Recovery Time (µs)

rr

t

0

0 200 400 600 800 1000

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 8 - Recovery Time Characteristics, T

TJ = 25 °C

= 150 °C

T

J

34

20ETF.. Series
T

IFM = 30 A

IFM = 20 A

IFM = 10 A

IFM = 5 A

20ETF.. Series

= 25 °C

J

IFM = 1 A

Fast Soft Recovery

Rectifier Diode, 20 A

- Maximum Reverse

rr

Q

- Maximum Reverse

rr

Q

= 25 °C

J

4.0
20ETF.. Series

3.5

3.0

2.5

2.0

1.5

1.0

Recovery Charge (µC)

0.5

= 25 °C

T

J

0

0 200 400 600 800 1000

IFM = 30 A

IFM = 20 A

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 10 - Recovery Charge Characteristics, T

10

20ETF.. Series

9

= 150 °C

T

J

8

7

6

5

4

3

Recovery Charge (µC)

2

1

0

0 200 400 600 800 1000

IFM = 30 A

IFM = 20 A

IFM = 10 A

IFM = 5 A

IFM = 1 A

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 11 - Recovery Charge Characteristics, T

IFM = 10 A

IFM = 5 A

IFM = 1 A

J

= 25 °C

J

= 150 °C

0.5

0.4

0.3

0.2

- Maximum Reverse

Recovery Time (µs)

rr

0.1

t

0

0 200 400 600 800 1000

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 9 - Recovery Time Characteristics, T

20ETF.. Series

= 150 °C

T

J

IFM = 30 A

= 20 A

I

FM

I

= 10 A

FM

= 5 A

I

FM

= 1 A

I

FM

= 150 °C

J

70

20ETF.. Series

60

50

40

30

20

- Maximum Reverse
Recovery Current (A)

rr

I

10

= 25 °C

T

J

0

0 200 400 600 800 1000

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 12 - Recovery Current Characteristics, T

IFM = 30 A

IFM = 20 A

IFM = 10 A

IFM = 5 A

IFM = 1 A

= 25 °C

J

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Document Number: 93142

4 Revision: 12-Jun-08

20ETF..FP Soft Recovery Series

Fast Soft Recovery

Vishay High Power Products

Rectifier Diode, 20 A

100

20ETF.. Series

= 150 °C

T

J

80

60

40

- Maximum Reverse
Recovery Current (A)

rr

20

I

0

0 200 400 600 800 1000

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 13 - Recovery Current Characteristics, TJ = 150 °C

10

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

1

IFM = 30 A

IFM = 20 A

IFM = 10 A

IFM = 5 A

IFM = 1 A

Steady state value

(DC operation)

0.1

0.01

- Transient Thermal Impedance (K/W)

thJC

Z

Single pulse

Fig. 14 - Thermal Impedance Z

Square Wave Pulse Duration (s)

Characteristics

thJC

20ETF.. Series

1

100.0001 0.001 0.01 0.1

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Revision: 12-Jun-08 5

20ETF..FP Soft Recovery Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

20 E T F 06 FP -

1 - Current rating (20 = 20 A)

2 - Circuit configuration:

3 - Package:

4 - Type of silicon:

5 - Voltage code x 100 = V

6 - FULL-PAK

- None = Standard production

7

Fast Soft Recovery

Rectifier Diode, 20 A

51324

E = Single diode

T = TO-220AC

F = Fast soft recovery rectifier

RRM

PbF = Lead (Pb)-free

67

02 = 200 V
04 = 400 V
06 = 600 V

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95005

Part marking information http://www.vishay.com/doc?95009

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6 Revision: 12-Jun-08

Document Number: 93142

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

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