Vishay 20BQ030 Data Sheet
Bulletin PD-20717 rev. G 07/04
20BQ030
SCHOTTKY RECTIFIER 2 Amp
I
= 2 Amp
F(AV)
VR = 30V
Major Ratings and Characteristics
Characteristics 20BQ030 Units
I
Rectangular waveform 2.0 A
F(AV)
V
RRM
I
@ tp = 5 µs sine 350 A
FSM
VF@ 2.0 Apk, TJ=125°C 0.37 V
TJrange - 55 to 150 °C
30 V
Description/ Features
The 20BQ030 surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Case Styles
20BQ030
www.irf.com
SMB
1
20BQ030
Bulletin PD-20717 rev. G 07/04
Voltage Ratings
Part number 20BQ030
VRMax. DC Reverse Voltage (V)
V
Max. Working Peak Reverse Voltage (V)
RWM
30
Absolute Maximum Ratings
Parameters 20BQ Units Conditions
I
Max. Average Forward Current 2.0 A 50% duty cycle @ TL = 119 °C, rectangular wave form.
F(AV)
I
Max. Peak One Cycle Non-Repetitive 350 5µs Sine or 3µs Rect. pulse
FSM
Surge Current 80 10ms Sine or 6ms Rect. pulse
EASNon-Repetitive Avalanche Energy 3.0 mJ TJ = 25 °C, IAS = 1A, L = 6mH
IARRepetitive Avalanche Current 1.0 A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Following any rated
load condition and
with rated V
RRM
Electrical Specifications
Parameters 20BQ Units Conditions
VFMMax. Forward Voltage Drop (1) 0.470 V @ 2A
0.550 V @ 4A
VFMMax. Forward Voltage Drop (1) 0.370 V @ 2A
0.470 V @ 4A
IRMMax. Reverse Leakage Current (1) 0.5 mA TJ = 25 °C
15 mA TJ = 125 °C
CTMax. Junction Capacitance 200 pF VR = 5VDC, (test signal range 100KHz to 1Mhz) 25°C
LSTypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJ = 25 °C
TJ = 125 °C
VR = rated V
R
Thermal-Mechanical Specifications
Parameters 20BQ Units Conditions
TJMax. Junction Temperature Range (*) - 55 t o 15 0 °C
T
Max. Storage Temperature Range - 55 to 150 °C
stg
R
Max. Thermal Resistance Junction 25 °C/W DC operation
thJL
to Lead (**)
R
Max. Thermal Resistance Junction 80 °C/W
thJA
to Ambient
wt Approximate Weight 0.10 (0.003) g (oz.)
Case Style SMB Similar DO-214AA
Device Marking IR2E
(*) dPtot 1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
(**) Mounted 1 inch square PCB
applied
2 www.irf.com
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