1N5624GP thru 1N5627GP
Vishay General Semiconductor
Glass Passivated Junction Rectifier
FEATURES
®
• Superectifier structure for high reliability
application
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current
Patented*
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly by
Patent No. 3,930,306
DO-201AD
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
max. 175 °C
J
200 V to 800 V
3.0 A
125 A
5.0 µA
0.95 V
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power
supplies, inverters, converters and freewheeling
diodes application.
MECHANICAL DATA
Case: DO-201AD, molded epoxy over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N5624GP 1N5625GP 1N5626GP 1N5627GP UNIT
Maximum repetitive peak reverse voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Maximum full load reverse current, full cycle average
0.375" (9.5 mm) lead length at T
Operating junction and storage temperature range T
Note:
(1) JEDEC registered values
Document Number: 88524
Revision: 03-Apr-08
= 70 °C
A
= 70 °C
A
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
RRM
DC
I
F(AV)
I
FSM
I
R(AV)
, T
J
STG
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
(1)
200 400 600 800 V
200 400 600 800 V
3.0 A
125 A
200 µA
- 65 to + 175 °C
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1
1N5624GP thru 1N5627GP
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL 1N5624GP 1N5625GP 1N5626GP 1N5627GP UNIT
T
Maximum instantaneous
forward voltage
(1,2)
3.0 A
Maximum DC reverse current
at rated DC blocking voltage
I
= 0.5 A, IR = 1.0 A,
Typical reverse recovery time
F
I
= 0.25 A
rr
Typical junction capacitance 4.0 V, 1 MHz C
= 25 °C
A
T
= 70 °C
A
T
= 25 °C
A
T
= 150 °C 300 200
A
V
F
I
R
t
3.0 µs
rr
40 pF
J
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) JEDEC registered values
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N5624GP 1N5625GP 1N5626GP 1N5627GP UNIT
Typical thermal resistance
(1)
Note:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
R
θJA
1.0
0.95
5.0
20 °C/W
V
µA
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
1N5626GP-E3/54 1.28 54 1400 13" diameter paper tape and reel
1N5626GP-E3/73 1.28 73 1000 Ammo pack packaging
1N5626GPHE3/54
1N5626GPHE3/73
(1)
(1)
1.28 54 1400 13" diameter paper tape and reel
1.28 73 1000 Ammo pack packaging
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
= 25 °C unless otherwise noted)
A
4.0
3.0
2.0
1.0
0.375" (9.5 mm) Lead Length
Average Forward Rectified Current (A)
0
250 50 75 100 125 150 175
Ambient Temperature (°C)
Figure 1. Forward Current Derating Curve
60 Hz
Resistive or
Inductive Load
1000
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
rrent (A)
100
Average Forward Cu
10
1 10 100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
www.vishay.com For technical questions within your region, please contact one of the following:
2
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88524
Revision: 03-Apr-08
1N5624GP thru 1N5627GP
Vishay General Semiconductor
100
10
TJ = 25 °C
1
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Current (A)
0.1
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
10
TJ = 125 °C
1
TJ = 75 °C
0.1
TJ = 25 °C
100
Junction Capacitance (pF)
10
Figure 5. Typical Junction Capacitance
Reverse Voltage (V)
TJ = 25 °C
f = 1.0 MHz
= 50 mVp-p
V
sig
100101
Instantaneous Reverse Current (µA)
0.01
10040 60200 80
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
Document Number: 88524
Revision: 03-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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