VISHAY 1N5624GP User Manual
1N5624GP thru 1N5627GP
Vishay General Semiconductor
Glass Passivated Junction Rectifier
FEATURES
®
• Superectifier structure for high reliability
application
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current
Patented*
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly by
Patent No. 3,930,306
DO-201AD
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
max. 175 °C
J
200 V to 800 V
3.0 A
125 A
5.0 µA
0.95 V
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power
supplies, inverters, converters and freewheeling
diodes application.
MECHANICAL DATA
Case: DO-201AD, molded epoxy over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N5624GP 1N5625GP 1N5626GP 1N5627GP UNIT
Maximum repetitive peak reverse voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Maximum full load reverse current, full cycle average
0.375" (9.5 mm) lead length at T
Operating junction and storage temperature range T
Note:
(1) JEDEC registered values
Document Number: 88524
Revision: 03-Apr-08
= 70 °C
A
= 70 °C
A
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
RRM
DC
I
F(AV)
I
FSM
I
R(AV)
, T
J
STG
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
(1)
200 400 600 800 V
200 400 600 800 V
3.0 A
125 A
200 µA
- 65 to + 175 °C
www.vishay.com
1
1N5624GP thru 1N5627GP
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL 1N5624GP 1N5625GP 1N5626GP 1N5627GP UNIT
T
Maximum instantaneous
forward voltage
(1,2)
3.0 A
Maximum DC reverse current
at rated DC blocking voltage
I
= 0.5 A, IR = 1.0 A,
Typical reverse recovery time
F
I
= 0.25 A
rr
Typical junction capacitance 4.0 V, 1 MHz C
= 25 °C
A
T
= 70 °C
A
T
= 25 °C
A
T
= 150 °C 300 200
A
V
F
I
R
t
3.0 µs
rr
40 pF
J
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) JEDEC registered values
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N5624GP 1N5625GP 1N5626GP 1N5627GP UNIT
Typical thermal resistance
(1)
Note:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
R
θJA
1.0
0.95
5.0
20 °C/W
V
µA
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
1N5626GP-E3/54 1.28 54 1400 13" diameter paper tape and reel
1N5626GP-E3/73 1.28 73 1000 Ammo pack packaging
1N5626GPHE3/54
1N5626GPHE3/73
(1)
(1)
1.28 54 1400 13" diameter paper tape and reel
1.28 73 1000 Ammo pack packaging
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
= 25 °C unless otherwise noted)
A
4.0
3.0
2.0
1.0
0.375" (9.5 mm) Lead Length
Average Forward Rectified Current (A)
0
250 50 75 100 125 150 175
Ambient Temperature (°C)
Figure 1. Forward Current Derating Curve
60 Hz
Resistive or
Inductive Load
1000
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
rrent (A)
100
Average Forward Cu
10
1 10 100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
www.vishay.com For technical questions within your region, please contact one of the following:
2
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88524
Revision: 03-Apr-08
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