Small Signal Fast Switching Diode
Features
• These diodes are also available in other
case styles including the DO35 case
with the type designation 1N4148, the
MiniMELF case with the type
designation LL4148, and the SOT23 case with the
type designation IMBD4148-V
• Silicon epitaxial planar diode
• Fast switching diodes
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: SOD323 plastic case
Weight: approx. 4.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
e3
1N4148WS-V
Vishay Semiconductors
20145
Parts Table
Par t Ordering code Type Marking Remarks
1N4148WS-V 1N4148WS-V-GS18 or 1N4148WS-V-GS08 A2 Tape and Reel
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Reverse voltage
Repetitive peak reverse voltage
Average rectified current half
wave rectification with resistive
load
Surge forward current
Power dissipation
Note:
1)
Valid provided that electrodes are kept at ambient temperature.
f ≥ 50 Hz
t < 1 s and T
= 25 °C I
j
V
V
RRM
I
F(AV)
FSM
P
R
tot
75 V
100 V
1)
150
350 mA
1)
200
mA
mW
Document Number 85751
Rev. 1.7, 14-Sep-07
www.vishay.com
1
1N4148WS-V
Vishay Semiconductors
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air
Junction temperature
Storage temperature
Note:
1)
Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
= 10 mA V
I
Forward voltage
Leakage current
Diode capacitance
Voltage rise when switching ON
(tested with 50 mA pulses)
Reverse recovery time
Rectification efficiency
t
p
= 10 mA, IR = 1 mA, VR = 6 V,
I
F
F
= 100 mA V
I
F
V
= 20 V I
R
= 75 V I
V
R
= 100 V I
V
R
V
= 20 V, Tj = 150 °C I
R
= VR = 0 V C
V
F
tested with 50 mA pulses,
= 0.1 µs, rise time < 30 ns,
= (5 to 100) kHz
f
p
= 100 Ω
R
L
f = 100 MHz, V
RF
= 2 V
R
thJA
T
j
T
stg
F
F
R
R
R
R
D
V
fr
t
rr
ην 0.45
650
1)
K/W
150 °C
- 65 to + 150 °C
1000 mV
1200 mV
25 nA
5µA
100 µA
50 µA
4pF
2.5 V
4ns
Rectification Efficiency Measurement Circuit
60 Ω 5 kΩ
VRF = 2 V
17436
2 nF
V
O
www.vishay.com
2
Document Number 85751
Rev. 1.7, 14-Sep-07
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
3
10
2
(mA)
F
I
17437
10
10
10
10
Tj = 100 °C
1
-1
-2
0
1
VF (V)
Figure 1. Forward characteristics
= 25 °C
T
j
1N4148WS-V
Vishay Semiconductors
= 25 °C
T
1.1
1.0
)
R
0.9
(V
(0 V)
D
D
C
C
0.8
0.7
2
17440
20 86410
VR (V)
Figure 4. Relative Capacitance vs. Reverse Voltage
j
f = 1 MHz
4
10
5
2
3
10
5
2
2
10
(Ω)
f
r
5
2
T
= 25 °C
j
f = 1 kHz
10
5
2
-2
17438
10
-1
10
110
10
IF (mA)
2
Figure 2. Dynamic Forward Resistance vs. Forward Current
250
200
150
100
4
10
5
2
3
10
5
2
2
10
(nA)
R
I
5
2
10
5
2
VR = 20 V
1
17441
0
100 200
Tj (°C)
Figure 5. Leakage Current vs. Junction Temperature
- Power Dissipation (mW)
50
tot
P
0
0 50 100 150 200
T
20324
- Ambient Temperature (°C)
amb
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Document Number 85751
Rev. 1.7, 14-Sep-07
www.vishay.com
3
1N4148WS-V
Vishay Semiconductors
100
5
4
3
2
10
5
4
(A)
3
FRM
2
I
1
5
4
3
2
0.1
17442
Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration
Package Dimensions in millimeters (inches): SOD323
V = 0
0.1
0.2
0.5
-5
10
-4
10
-3
10
-2
25 2525 25 25 25
10
tP (s)
I
/T T = 1/f
v = t
P
I
FRM
t
P
T
-1
P
t
1
1010
www.vishay.com
4
17443
Document Number 85751
Rev. 1.7, 14-Sep-07
1N4148WS-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85751
Rev. 1.7, 14-Sep-07
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Loading...