VISHAY 1N4148WS-V Technical data

Small Signal Fast Switching Diode

Features

• These diodes are also available in other
case styles including the DO35 case
with the type designation 1N4148, the
MiniMELF case with the type
designation LL4148, and the SOT23 case with the
type designation IMBD4148-V

• Silicon epitaxial planar diode

• Fast switching diodes

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Mechanical Data

Case: SOD323 plastic case
Weight: approx. 4.3 mg
Packaging Codes/Options:

GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box

e3

1N4148WS-V

Vishay Semiconductors

20145

Parts Table

Par t Ordering code Type Marking Remarks

1N4148WS-V 1N4148WS-V-GS18 or 1N4148WS-V-GS08 A2 Tape and Reel

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Val ue Unit

Reverse voltage

Repetitive peak reverse voltage

Average rectified current half
wave rectification with resistive
load

Surge forward current

Power dissipation

Note:

1)

Valid provided that electrodes are kept at ambient temperature.

f ≥ 50 Hz

t < 1 s and T

= 25 °C I

j

V

V

RRM

I

F(AV)

FSM

P

R

tot

75 V

100 V

1)

150

350 mA

1)

200

mA

mW

Document Number 85751

Rev. 1.7, 14-Sep-07

www.vishay.com

1

1N4148WS-V

Vishay Semiconductors

Thermal Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Value Unit

Thermal resistance junction to ambient air

Junction temperature

Storage temperature

Note:

1)

Valid provided that electrodes are kept at ambient temperature.

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Min Ty p. Max Unit

= 10 mA V

I

Forward voltage

Leakage current

Diode capacitance

Voltage rise when switching ON
(tested with 50 mA pulses)

Reverse recovery time

Rectification efficiency

t

p

= 10 mA, IR = 1 mA, VR = 6 V,

I

F

F

= 100 mA V

I

F

V

= 20 V I

R

= 75 V I

V

R

= 100 V I

V

R

V

= 20 V, Tj = 150 °C I

R

= VR = 0 V C

V

F

tested with 50 mA pulses,
= 0.1 µs, rise time < 30 ns,

= (5 to 100) kHz

f

p

= 100 Ω

R

L

f = 100 MHz, V

RF

= 2 V

R

thJA

T

j

T

stg

F

F

R

R

R

R

D

V

fr

t

rr

ην 0.45

650

1)

K/W

150 °C

- 65 to + 150 °C

1000 mV

1200 mV

25 nA

5µA

100 µA

50 µA

4pF

2.5 V

4ns

Rectification Efficiency Measurement Circuit

60 Ω 5 kΩ

VRF = 2 V

17436

2 nF

V

O

www.vishay.com

2

Document Number 85751

Rev. 1.7, 14-Sep-07