Vishay High Power Products
Stud-Mounted
Silicon Rectifier Diodes, 15 A
DESCRIPTION/FEATURES
• Low thermal impedance
• High case temperature
• Excellent reliability
• Maximum design flexibility
• Can be made to meet stringent military, aerospace and
other high reliability requirements
1N3208 Series
DO-203AB (DO-5)
• Compliant to RoHS directive 2002/95/EC
PRODUCT SUMMARY
I
F(AV)
15 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
(1)
I
F(AV)
I
FSM
I2t
2
I
√t 3870 A2√s
V
RRM
T
J
Note
(1)
JEDEC registered values
T
C
50 Hz 239
60 Hz 250
50 Hz 286
60 Hz 260
Range 50 to 600 V
15
(1)
150
(1)
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
, MAXIMUM REPETITIVE PEAK
RRM
TYPE NUMBER
REVERSE VOLTAGE
= - 65 °C TO 175 °C)
(T
J
V
1N3208 50
1N3209 100
1N3210 200
1N3211 300
1N3212 400
1N3213 500
1N3214 600
(1)
(1)
(1)
(1)
(1)
(1)
(1)
Notes
(1)
JEDEC registered values
• Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g. 1N3208R, 1N3209R
, MAXIMUM DIRECT
V
RM
REVERSE VOLTAGE
= - 65 °C TO 175 °C)
(T
J
V
(1)
50
(1)
100
(1)
200
(1)
300
(1)
400
(1)
500
(1)
600
A
°C
A
A2s
1N3208 Series
Vishay High Power Products
Stud-Mounted
Silicon Rectifier Diodes, 15 A
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
(1)
Maximum average forward current
at case temperature
Maximum peak one cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing
2
t for individual
device fusing
Maximum I
2
√t for individual
device fusing
Maximum forward voltage drop V
Maximum average reverse current I
Notes
(1)
JEDEC registered values
(2)I2
t for time tx = I2√t x √t
x
I
F(AV)
I
2
I
R(AV)
FSM
2
I
√t
FM
180° sinusoidal conduction
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
t = 10 ms
Following any rated load
condition and with rated
V
applied
RRM
Following any rated load
condition and with V
RRM
applied following surge = 0
With rated V
RRM
applied
following surge,
t = 8.3 ms 260
t
t = 10 ms
t = 8.3 ms 368
(2)
t = 0.1 ms to 10 ms, V
I
= 15 A (47.1 A peak), TC = 150 °C 1.5
F(AV)
Maximum rated I
F(AV)
initial T
= 150 °C
J
With V
surge, initial T
= 0 following surge 3870 A2√s
RRM
= 0 following
RRM
J
= 150 °C
and TC = 150 °C 10
15
150
239
250
284
297
286
403
(1)
(1)
(1)
(1)
A
°C
A
A
V
mA
2
s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
and storage temperature range
Maximum internal thermal
resistance, junction to case
Thermal resistance,
case to sink
Maximum allowable mounting torque
(+ 0 %, - 10 %)
T
R
R
J
, T
thJC
thCS
Stg
DC operation 0.65
Mounting surface, smooth, flat and greased 0.25
Not lubricated thread, tighting on nut
Lubricated thread, tighting on nut
Not lubricated thread, tighting on hexagon
Lubricated thread, tighting on hexagon
(2)
(2)
(3)
(3)
- 65 to 175
Weight
Case style JEDEC DO-203AB (DO-5)
Notes
(1)
JEDEC registered values
(2)
Recommended for pass-through holes
(3)
Recommended for holed threaded heatsinks
(1)
3.4 (30)
2.3 (20)
4.2 (37)
3.2 (28)
28.5 g
1oz.
°C
°C/W