Vishay High Power Products
Stud-Mounted
Silicon Rectifier Diodes, 15 A
DESCRIPTION/FEATURES
• Low thermal impedance
• High case temperature
• Excellent reliability
• Maximum design flexibility
• Can be made to meet stringent military, aerospace and
other high reliability requirements
1N3208 Series
DO-203AB (DO-5)
• Compliant to RoHS directive 2002/95/EC
PRODUCT SUMMARY
I
F(AV)
15 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
(1)
I
F(AV)
I
FSM
I2t
2
I
√t 3870 A2√s
V
RRM
T
J
Note
(1)
JEDEC registered values
T
C
50 Hz 239
60 Hz 250
50 Hz 286
60 Hz 260
Range 50 to 600 V
15
(1)
150
(1)
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
, MAXIMUM REPETITIVE PEAK
RRM
TYPE NUMBER
REVERSE VOLTAGE
= - 65 °C TO 175 °C)
(T
J
V
1N3208 50
1N3209 100
1N3210 200
1N3211 300
1N3212 400
1N3213 500
1N3214 600
(1)
(1)
(1)
(1)
(1)
(1)
(1)
Notes
(1)
JEDEC registered values
• Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g. 1N3208R, 1N3209R
, MAXIMUM DIRECT
V
RM
REVERSE VOLTAGE
= - 65 °C TO 175 °C)
(T
J
V
(1)
50
(1)
100
(1)
200
(1)
300
(1)
400
(1)
500
(1)
600
A
°C
A
A2s
1N3208 Series
Vishay High Power Products
Stud-Mounted
Silicon Rectifier Diodes, 15 A
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
(1)
Maximum average forward current
at case temperature
Maximum peak one cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing
2
t for individual
device fusing
Maximum I
2
√t for individual
device fusing
Maximum forward voltage drop V
Maximum average reverse current I
Notes
(1)
JEDEC registered values
(2)I2
t for time tx = I2√t x √t
x
I
F(AV)
I
2
I
R(AV)
FSM
2
I
√t
FM
180° sinusoidal conduction
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
t = 10 ms
Following any rated load
condition and with rated
V
applied
RRM
Following any rated load
condition and with V
RRM
applied following surge = 0
With rated V
RRM
applied
following surge,
t = 8.3 ms 260
t
t = 10 ms
t = 8.3 ms 368
(2)
t = 0.1 ms to 10 ms, V
I
= 15 A (47.1 A peak), TC = 150 °C 1.5
F(AV)
Maximum rated I
F(AV)
initial T
= 150 °C
J
With V
surge, initial T
= 0 following surge 3870 A2√s
RRM
= 0 following
RRM
J
= 150 °C
and TC = 150 °C 10
15
150
239
250
284
297
286
403
(1)
(1)
(1)
(1)
A
°C
A
A
V
mA
2
s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
and storage temperature range
Maximum internal thermal
resistance, junction to case
Thermal resistance,
case to sink
Maximum allowable mounting torque
(+ 0 %, - 10 %)
T
R
R
J
, T
thJC
thCS
Stg
DC operation 0.65
Mounting surface, smooth, flat and greased 0.25
Not lubricated thread, tighting on nut
Lubricated thread, tighting on nut
Not lubricated thread, tighting on hexagon
Lubricated thread, tighting on hexagon
(2)
(2)
(3)
(3)
- 65 to 175
Weight
Case style JEDEC DO-203AB (DO-5)
Notes
(1)
JEDEC registered values
(2)
Recommended for pass-through holes
(3)
Recommended for holed threaded heatsinks
(1)
3.4 (30)
2.3 (20)
4.2 (37)
3.2 (28)
28.5 g
1oz.
°C
°C/W
1N3208 Series
35
30
25
20
15
10
Over Full Cycle (A)
Average Forward Current
5
0
250
200
Stud-Mounted
Silicon Rectifier Diodes, 15 A
Ø
DC
180°
120°
60°
110
120 130 140 150 160 170 180
Maximum Allowable Case Temperature (°C)
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature
At any rated load condition and
with rated V
Conduction period
following surge
RRM
Vishay High Power Products
120
100
90
80
70
60
50
40
30
Over Full Cycle (W)
20
Average Forward Power Loss
10
0
10 20 30 40 50 60 70 8090
0
Average Forward Current Over Full Cycle (A)
Fig. 3 - Maximum Low Level Forward Power Loss vs.
Average Forward Current
5
10
4
10
120°
60°
120°
180°
DC
TJ = 140 °C
Ø
Conduction period
150
Forward Current (A)
Peak Half Sine Wave
100
1
50 Hz
2468 10 20 40 60
60 Hz
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 2 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses
3
10
2
10
10
Instantaneous Forward Current (A)
1
01 234567
Fig. 5 - Maximum Forward Voltage vs. Forward Current
10
Over Full Cycle (W)
10
Average Forward Power Loss
10
Fig. 4 - Maximum High Level Forward Power Loss vs.
TJ = 140 °C
TJ = 25 °C
Instantaneous Forward Voltage (V)
3
2
10
60°
DC
2
10
180°
TJ = 140 °C
Ø
Conduction period
3
10
Average Forward Current Over Full Cycle (A)
Average Forward Current
4
10
1N1183, 1N3765, 1N1183A, 1N2128A, 1N3208 Series
DIMENSIONS in millimeters (inches)
25.4 (1.0) MAX.
DO-203AB (DO-5) for
Ø 14.6 (0.57)
6.1 (0.24)
7.0 (0.28)
Ø 4.10 (0.16)
Ø 3.80 (0.15)
4 (0.16) MIN.
10.8 (0.43)
11.4 (0.45)
Outline Dimensions
Vishay High Power Products
1.03 (0.04)
MAX.
10.7 (0.42)
11.5 (0.45)
1.0 (0.04)
MAX.
1/4" 28UNF-2A
for metric devices: M6 x 1
17.40 (0.68) MIN.
Across flats
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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