Vishay 18TQ0..PbF Series Data Sheet

18TQ0..PbF Series

Vishay High Power Products

Schottky Rectifier, 18 A

 

Base

 

cathode

 

 

2

 

1

3

TO-220AC

Cathode

Anode

PRODUCT SUMMARY

IF(AV)

18 A

VR

35 V to 50 V

FEATURES

• 175 °C TJ operation

• Low forward voltage drop

• High frequency operation

High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

Guard ring for enhanced ruggedness and long term reliability

Compliant to RoHS directive 2002/95/EC

Designed and qualified for industrial level

DESCRIPTION

The 18TQ...PbF Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

 

 

 

 

 

 

 

 

 

SYMBOL

 

CHARACTERISTICS

 

 

 

 

VALUES

UNITS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IF(AV)

Rectangular waveform

 

 

 

 

 

18

 

 

A

VRRM

Range

 

 

 

 

 

 

 

 

35 to 50

 

V

IFSM

tp = 5 μs sine

 

 

 

 

 

1800

 

 

A

VF

18 Apk, TJ = 125 °C

 

 

 

 

 

0.53

 

 

V

TJ

Range

 

 

 

 

 

 

 

 

- 55 to 175

 

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOLTAGE RATINGS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

 

SYMBOL

 

18TQ035PbF

 

18TQ040PbF

 

18TQ045PbF

18TQ050PbF

 

UNITS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum DC reverse voltage

 

VR

 

35

 

40

 

 

45

 

50

 

V

Maximum working peak reverse voltage

VRWM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ABSOLUTE MAXIMUM RATINGS

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

 

SYMBOL

 

 

 

TEST CONDITIONS

VALUES

 

UNITS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum average forward current

IF(AV)

 

50 % duty cycle at TC = 149 °C, rectangular waveform

18

 

 

See fig. 5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A

Maximum peak one cycle

 

 

 

5 μs sine or 3 μs rect. pulse

 

Following any rated load

1800

 

non-repetitive surge current

 

IFSM

 

 

 

 

 

 

condition and with rated

 

 

 

 

 

10 ms sine or 6 ms rect. pulse

 

390

 

 

See fig. 7

 

 

 

 

VRRM applied

 

 

Non-repetitive avalanche energy

 

EAS

 

TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH

24

 

mJ

Repetitive avalanche current

 

IAR

 

Current decaying linearly to zero in 1 μs

3.6

 

A

 

 

Frequency limited by TJ maximum VA = 1.5 x VR typical

 

 

 

 

 

 

 

 

* Pb containing terminations are not RoHS compliant, exemptions may apply

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Document Number: 94149

For technical questions, contact: diodestech@vishay.com

www.vishay.com

Revision: 10-Nov-09

 

 

 

 

 

 

 

 

 

 

 

 

1

18TQ0..PbF Series

Vishay High Power Products

Schottky Rectifier, 18 A

 

 

 

 

 

 

 

 

 

ELECTRICAL SPECIFICATIONS

 

 

 

 

PARAMETER

 

SYMBOL

TEST CONDITIONS

VALUES

UNITS

 

 

 

 

 

 

 

 

 

 

 

18 A

TJ = 25 °C

0.60

 

 

 

 

 

 

 

 

Maximum forward voltage drop

 

VFM (1)

36 A

0.72

V

 

 

See fig. 1

 

 

 

 

 

18 A

TJ = 125 °C

0.53

 

 

 

 

 

 

 

 

 

 

 

 

 

 

36 A

0.67

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum reverse leakage current

 

IRM (1)

TJ = 25 °C

VR = Rated VR

2.5

mA

See fig. 2

 

TJ = 125 °C

25

 

 

 

 

Maximum junction capacitance

 

CT

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

1400

pF

Typical series inductance

 

LS

Measured lead to lead 5 mm from package body

8

nH

Maximum voltage rate of change

 

dV/dt

Rated VR

10 000

V/μs

Note

 

 

 

 

 

(1) Pulse width < 300 μs, duty cycle < 2 %

 

 

 

 

 

 

 

 

 

 

 

THERMAL - MECHANICAL SPECIFICATIONS

 

 

PARAMETER

 

SYMBOL

TEST CONDITIONS

VALUES

UNITS

 

 

 

 

 

 

 

 

Maximum junction and storage

 

TJ, TStg

 

 

- 55 to 175

°C

temperature range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum thermal resistance,

 

RthJC

DC operation

1.50

 

junction to case

 

See fig. 4

 

 

 

 

°C/W

 

 

 

 

 

 

 

Typical thermal resistance,

 

RthCS

Mounting surface, smooth and greased

0.50

 

 

case to heatsink

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Approximate weight

 

 

 

 

2

g

 

 

 

 

 

 

 

 

 

 

0.07

oz.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Mounting torque

minimum

 

 

 

 

6 (5)

kgf · cm

maximum

 

 

 

 

12 (10)

(lbf in)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

18TQ035

 

 

 

 

 

 

 

Marking device

 

 

Case style TO-220AC

18TQ040

 

 

 

 

 

 

18TQ045

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

18TQ050

 

 

 

 

 

 

 

 

www.vishay.com

For technical questions, contact: diodestech@vishay.com

Document Number: 94149

2

 

Revision: 10-Nov-09

Vishay 18TQ0..PbF Series Data Sheet

18TQ0..PbF Series

Schottky Rectifier, 18 A Vishay High Power Products

 

1000

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>InstantaneousForward

100

 

 

 

 

 

 

 

 

10

 

 

 

 

TJ = 175 °C

 

 

 

 

 

 

 

TJ = 125 °C

 

 

 

 

 

 

 

TJ = 25 °C

 

 

1

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>(A)Current

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>-

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>F

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>I

 

 

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VFM - Forward Voltage Drop (V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics

<![if ! IE]>

<![endif]>IR - Reverse Current (mA)

1000

 

 

100

 

TJ = 175 °C

 

 

10

 

TJ = 150 °C

 

TJ = 125 °C

 

 

1

 

TJ = 100 °C

 

 

0.1

TJ

= 75 °C

 

0.01 TJ = 50 °C

0.001

TJ = 25 °C

0.0001

0

10

20

30

40

50

VR - Reverse Voltage (V)

Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

 

10 000

 

 

 

 

 

<![if ! IE]>

<![endif]>(pF)

 

 

 

 

 

 

<![if ! IE]>

<![endif]>- Junction Capacitance

1000

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>T

 

 

 

 

 

 

<![if ! IE]>

<![endif]>C

 

 

 

 

 

 

 

100

 

 

 

 

 

 

0

10

20

30

40

50

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

<![if ! IE]>

<![endif]>(°C/W)

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>Impedance

1

 

 

 

 

 

 

 

 

0.1

 

 

D = 0.50

 

 

PDM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>- Thermal

 

 

 

 

 

 

 

 

 

 

 

D = 0.33

 

 

t1

 

 

 

 

 

 

 

 

 

 

 

 

 

D = 0.25

 

 

t2

 

 

0.01

 

 

D = 0.17

 

Notes:

 

 

 

 

Single pulse

 

D = 0.08

 

 

 

 

<![if ! IE]>

<![endif]>thJC

 

 

 

1. Duty factor D = t1/t2 .

 

 

(thermal resistance)

 

 

 

 

 

 

 

 

 

2. Peak TJ

= PDM x ZthJC

+ TC

.

<![if ! IE]>

<![endif]>Z

0.001

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.00001

0.0001

0.001

0.01

0.1

1

10

 

100

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Document Number: 94149

For technical questions, contact: diodestech@vishay.com

www.vishay.com

Revision: 10-Nov-09

 

3

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