Vishay 15ETX06-1PbF User Manual

15ETX06SPbF
Hyperfast Rectifier,
15ETX06-1PbF
15ETX06SPbF/15ETX06-1PbF
15 A FRED Pt
FEATURES
• Benchmark ultralow forward voltage drop
• Hyperfast recovery time
• Low leakage current
TM
Available
RoHS*
COMPLIANT
Base
Cathode
2
2
• 175 °C operating junction temperature
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for Q101 level
DESCRIPTION/APPLICATIONS
1
N/C
D2PAK
3
Anode
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
N/C
1
TO-262
18 ns
15 A
600 V
3
Anode
State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
Average rectified forward current I
Peak repetitive forward current I
Operating junction and storage temperatures T
RRM
F(AV)
FSM
FM
, T
J
TC = 133 °C 15
TJ = 25 °C 170
Stg
600 V
ANon-repetitive peak surge current I
30
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94007 For technical questions, contact: diodes-tech@vishay.com Revision: 21-May-08 1
,
V
BR
V
R
IR = 100 µA 600 - -
R
IF = 15 A - 2.3 3.2
F
I
= 15 A, TJ = 150 °C - 1.5 1.8
F
VR = VR rated - 0.1 50
T
= 150 °C, VR = VR rated - 40 300
J
VR = 600 V - 20 - pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
V
µA
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15ETX06SPbF/15ETX06-1PbF
Vishay High Power Products
Hyperfast Rectifier,
15 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 100 A/µs, VR = 30 V - 18 22
= 15 A, dIF/dt = 100 A/µs, VR = 30 V - 20 32
I
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
rr
RRM
rr
F
T
= 25 °C
J
= 125 °C - 52 -
T
J
TJ = 25 °C - 2.4 -
T
= 125 °C - 5.1 -
J
= 15 A
I
F
dI
/dt = 200 A/µs
F
V
= 390 V
R
-22-
TJ = 25 °C - 25 -
T
= 125 °C - 150 -
J
-37-ns
-16- A
-350- nC
TJ = 125 °C
= 15 A
I
F
dI
/dt = 800 A/µs
F
V
= 390 V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range
Thermal resistance, junction to case per leg
Thermal resistance, junction to ambient per leg
Thermal resistance, case to heatsink
Weight
Mounting torque
Marking device
T
, T
J
Stg
R
-1.01.3
thJC
Typical socket mount - - 70
R
thJA
Mounting surface, flat, smooth
R
thCS
and greased
- 65 - 175 °C
-0.5-
-2.0- g
-0.07- oz.
Case style D
6.0
(5.0)
2
PAK 15ETX06S
-
Case style TO-262 15ETX06-1
12
(10)
kgf · cm
(lbf · in)
ns
A
nC
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94007
2 Revision: 21-May-08
15ETX06SPbF/15ETX06-1PbF
100
10
- Instantaneous
F
I
Forward Current (A)
1
0
0.5
1
2
VF - Forward Voltage Drop (V)
TJ = 175 °C
= 150 °C
T
J
= 25 °C
T
J
3
2.51.5
Hyperfast Rectifier,
15 A FRED Pt
3.5 4
TM
- Reverse Current (µA)
R
I
Vishay High Power Products
1000
100
10
1
0.1
0.01
0.001
0.0001 0 100 200 300 400 500 600
TJ = 175 °C
T
= 150 °C
J
T
= 125 °C
J
T
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
TJ = 25 °C
= 100 °C
J
T
= 25 °C
J
10
- Junction Capacitance (pF)
T
C
1
100 200 300 500 600400
0
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
P
DM
t
D = 0.50
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1
1/t2
thJC
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
t
2
.
+ T
C
.
Document Number: 94007 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 21-May-08 3
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