Vishay 15ETH06, 15ETH06S, 15ETH06-1 Data Sheet
Hyperfast Rectifier
N
C
N
Bulletin PD-20749 rev. D 08/01
15ETH06
15ETH06S
15ETH06-1
Features
• Hyperfastfast Recovery Time
• Low Forward Voltage Drop
• Low Leakage Current
• 175°C Operating Junction Temperature
• Single Die Center Tap Module
Description/ Applications
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop,
Hyperfast recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
t
= 22ns typ.
rr
I
= 15Amp
F(AV)
VR = 600V
Absolute Maximum Ratings
Parameters Max Units
V
RRM
I
F(AV)
I
FSM
I
FM
TJ, T
Peak Repetitive Peak Reverse Voltage 600 V
Average Rectified Forward Current @ TC = 140°C 15 A
Non Repetitive Peak Surge Current @ TJ = 25°C 120
Peak Repetitive Forward Current 30
Operating Junction and Storage Temperatures - 65 to 175 °C
STG
Case Styles
15ETH06
15ETH06S
15ETH06-1
Base
Cathode
athode
1
Anode
3
TO-220AC
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Cathode
1
/C
D2PAK
Base
2
2
3
Anode
1
/C
3
Anode
TO-262
1
15ETH06, 15ETH06S, 15ETH06-1
Bulletin PD-20749 rev. D 08/01
Electrical Characteristics @ T
Parameters Min Typ Max Test Conditions
= 25°C (unless otherwise specified)
J
Units
VBR, VrBreakdown Voltage, 600 - - V IR = 100µA
Blocking Voltage
V
F
Forward Voltage - 1.8 2.2 V IF = 15A, TJ = 25°C
- 1.3 1.6 V IF = 15A, TJ = 150°C
I
R
Reverse Leakage Current - 0.2 50 µA VR = VR Rated
- 30 500 µA TJ = 150°C, VR = VR Rated
C
T
L
S
Junction Capacitance - 20 - pF VR = 600V
Series Inductance - 8.0 - nH Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified)
t
rr
I
RRM
Q
t
rr
I
RRM
Q
Parameters Min Typ Max Test Conditions
Reverse Recovery Time - 22 30 ns IF = 1A, diF/dt = 100A/µs, VR = 30V
-2835 IF = 15A, diF/dt = 100A/µs, VR = 30V
-29- TJ = 25°C
-75- TJ = 125°C
Peak Recovery Current - 3.5 - A TJ = 25°C
-7- TJ = 125°C
Reverse Recovery Charge - 57 - nC TJ = 25°C
rr
- 300 - TJ = 125°C
Reverse Recovery Time - 51 - ns
Peak Recovery Current - 20 - A TJ = 125°C
Reverse Recovery Charge - 580 - nC
rr
Units
I
= 15A
F
diF /dt = 200A/µs
VR = 390V
I
= 15A
F
diF /dt = 800A/µs
VR = 390V
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
T
J
T
Stg
R
thJC
R
thJA
R
thCS
! Typical Socket Mount
"#Mounting Surface, Flat, Smooth and Greased
2
Max. Junction Temperature Range - - 175 °C
Max. Storage Temperature Range - 65 - 175
Thermal Resistance, Junction to Case Per Leg - 1.0 1.3 °C/W
!
Thermal Resistance, Junction to Ambient Per Leg - - 70
"
Thermal Resistance, Case to Heatsink - 0.5 -
Weight - 2.0 - g
Mounting Torque 6.0 - 12 Kg-cm
- 0.07 - (oz)
5.0 - 10 lbf.in
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15ETH06, 15ETH06S, 15ETH06-1
Bulletin PD-20749 rev. D 08/01
100
(A)
F
10
Instantaneous Forward Current - I
T = 175˚C
J
T = 150˚C
J
T = 25˚C
J
1000
T = 175˚C
J
150˚C
125˚C
100˚C
(µA)
R
100
10
1
0.1
0.01
Reverse Current - I
0.001
0
0 100 200 300 400 500 600
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
1000
T = 25˚C
J
( p F )
T
100
25˚C
1
0.5 1 1.5 2 2.5 3
Forward Voltage Drop - VFM (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
(°C/W)
D = 0.50
thJC
1
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
Single Pulse
Thermal Impedance Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
(Thermal Resistance)
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
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Junction Capacitance - C
10
0 100 200 300 400 500 600
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
P
DM
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
Characteristics
thJC
t
1
t
2
3
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