Vishay 12TQ..., 12TQ...S Data Sheet
Bulletin PD-20239 rev. B 12/01
Anode
1
3
Base
Cathode
2
N/C
C
12TQ...
12TQ...S
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics 12TQ Units
I
Rectangular 15 A
F(AV)
waveform
V
range 35 to 45 V
RRM
I
@ tp = 5 µs sine 990 A
FSM
VF@ 15 Apk, TJ = 125°C 0.50 V
TJrange - 55 to 150 °C
12TQ...
I
F(AV)
VR = 35 to 45V
Description/ Features
The 12TQ... Schottky rectifier series has been optimized for
very low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation up
to 150° C junction temperature. Typical applications are in
switching power supplies, converters, free-wheeling diodes,
and reverse battery protection.
150° C TJ operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Case Styles
12TQ... S
15 Amp
= 15Amp
Base
Cathode
2
1
athode
TO-220AC
3
Anode
D
2
PAK
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12TQ... Series
Bulletin PD-20239 rev. B 12/01
Voltage Ratings
Part number 12TQ035 12TQ040 12TQ045
VRMax. DC Reverse Voltage (V)
V
Max. Working Peak Reverse Voltage (V)
RWM
35 40 45
Absolute Maximum Ratings
Parameters 12TQ Units Conditions
I
Max. Average Forward Current 15 A 50% duty cycle @ TC = 120° C, rectangular wave form
F(AV)
* See Fig. 5
I
Max. Peak One Cycle Non-Repetitive 990 5µs Sine or 3µs Rect. pulse
FSM
Surge Current * See Fig. 7 250 10ms Sine or 6ms Rect. pulse
EASNon-Repetitive Avalanche Energy 16 mJ TJ = 25 °C, I
A
= 2 .4 Amps, L = 5.5 mH
AS
IARRepetitive Avalanche Current 2.4 A Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
Following any rated
load condition and
with rated V
RRM
max. VA = 1.5 x VR typical
applied
Electrical Specifications
Parameters 12TQ Units Conditions
VFMMax. Forward Voltage Drop (1) 0.56 V @ 15A
* See Fig. 1 0.71 V @ 30A
0.50 V @ 15A
0.64 V @ 30A
IRMMax. Reverse Leakage Current (1) 1.75 mA TJ = 25 °C
* See Fig. 2 70 mA TJ = 125 °C
CTMax. Junction Capacitance 900 pF VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C
LSTypical Series Inductance 8.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ µs
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJ = 25 °C
TJ = 125 °C
VR = rated V
R
Thermal-Mechanical Specifications
Parameters 12TQ Units Conditions
TJMax. Junction Temperature Range -55 to 150 °C
T
Max. Storage Temperature Range -55 to 150 °C
stg
R
Max. Thermal Resistance Junction 2.0 °C/W DC operation * See Fig. 4
thJC
to Case
R
Typical Thermal Resistance, Case to 0.50 °C/W Mounting surface, smooth and greased
thCS
Heatsink
wt Approximate Weight 2 (0.07) g (oz.)
T Mounting Torque Min. 6 (5)
Max. 12 (10)
Kg-cm
(Ibf-in)
2
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12TQ... Series
5
8
Bulletin PD-20239 rev. B 12/01
1000
100
F
10
1000
T = 150°C
100
J
10
R
1
.1
Reverse Current - I (mA)
.01
.001
125°C
100°C
75°C
50°C
25°C
0 5 10 15 20 25 30 35 40 4
Reverse Volt age - V (V)
Fig. 2 - Typical Values of Reverse Current
R
Vs. Reverse Voltage
T = 150°C
J
T = 125°C
J
Instantaneous Forward Current - I (A)
1
T = 25°C
J
1000
T
T = 25° C
J
.1
0.2.4.6.8 11.21.41.61.
For ward Voltage Drop - V (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
D = 0. 5 0
1
D = 0. 3 3
thJC
Ther mal Impedance - Z (°C/W)
D = 0. 2 5
D = 0. 1 7
D = 0. 0 8
.1
.01
Single Pulse
.001
.0 0001 . 0 001 . 001 . 01 .1 1 10 100
(Thermal Resist ance)
t , Rectangular Pulse Durat ion ( Sec onds)
Fig. 4 - Maximum Thermal Impedance Z
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Juncti on Capacitance - C (pF)
100
0 1020304050
FM
Reverse Volt age - V (V)
R
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
P
DM
t
1
t
Not es :
1. Duty factor D = t / t
2. Peak T = P x Z + T
1
Characteristics
thJC
2
1
2
JDMthJC
C
3
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