Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 12 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Wide current range
• Types up to 1200 V V
• RoHS compliant
• Designed and qualified for industrial and consumer level
12F(R) Series
RoHS
COMPLIANT
RRM
DO-203AA (DO-4)
PRODUCT SUMMARY
I
F(AV)
12 A
• Battery charges
• Converters
• Power supplies
• Machine tool controls
MAJOR RATINGS AND CHARACTERISTICS
TYPICAL APPLICATIONS
PARAMETER TEST CONDITIONS VALUES UNITS
I
F(AV)
I
F(RMS)
I
FSM
2
I
t
V
RRM
T
J
144 °C
T
C
50 Hz 265
60 Hz 280
50 Hz 351
60 Hz 320
Range 100 to 1200 V
12 A
19 A
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
TYPE
NUMBER
12F(R)
Note
(1)
Avalanche version only available from V
VOLTAGE
CODE
10 100 150 -
20 200 275 -
40 400 500 500
60 600 725 750
80 800 950 950
100 1000 1200 1150
120 1200 1400 1350
, MAXIMUM
RRM
REPETITIVE PEAK
REVERSE VOLTAGE
V
400 V to 1200 V
RRM
V
, MAXIMUM
RSM
NON-REPETITIVE
PEAK VOLTAGE
V
V
, MINIMUM
R(BR)
AVALANCHE
VOLTAGE
(1)
V
A
A2s
I
MAXIMUM
RRM
AT T
= 175 °C
J
mA
12
12F(R) Series
Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 12 A
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature
Maximum RMS forward current I
Maximum on-repetitive peak
reverse power
Maximum peak, one-cycle forward,
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3510 A2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop V
I
F(AV)
F(RMS)
(1)
P
R
I
FSM
F(TO)1
F(TO)2
r
f1
r
f2
FM
180° conduction, half sine wave
10 µs square pulse, TJ = TJ maximum 7 K/W
t = 10 ms
t = 8.3 ms 280
t = 10 ms
t = 8.3 ms 235
t = 10 ms
t = 8.3 ms 320
t = 10 ms
t = 8.3 ms 226
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
F(AV)
), TJ = TJ maximum 0.97
F(AV)
F(AV)
), TJ = TJ maximum 6.20
F(AV)
Ipk = 38 A, TJ = 25 °C, tp = 400 µs rectangular wave 1.26 V
Note
(1)
Available only for avalanche version, all other parameters the same as 12F
RRM
RRM
< I < π x I
< I < π x I
Sinusoidal half wave,
initial T
= TJ maximum
J
), TJ = TJ maximum 0.77
F(AV)
), TJ = TJ maximum 10.70
F(AV)
12 A
144 °C
19 A
265
225
351
250
A
A2s
V
mΩ
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
temperature range
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Allowable mounting torque
Approximate weight
Case style See dimensions - link at the end of datasheet DO-203AA (DO-4)
T
J
Stg
R
thJC
DC operation 2
- 65 to 175
- 65 to 200
°C
K/W
R
thCS
Mounting surface, smooth, flat and greased 0.5
Not lubricated threads
Lubricated threads
1.5 + 0 - 10 % N · m
13 lbf · in
1.2 + 0 - 10 % N · m
10 lbf · in
7g
0.25 oz.
12F(R) Series
Standard Recovery Diodes
Vishay High Power Products
(Stud Version), 12 A
ΔR
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
Note
• The table above shows the increment of thermal resistance R
CONDUCTION
thJC
180° 0.33 0.26
120° 0.41 0.44
90° 0.53 0.58
60° 0.78 0.81
30° 1.28 1.29
when devices operate at different conduction angles than DC
thJC
180
12F(R) Series
R (DC) = 2.0 K/W
thJC
170
Conducti on Angle
160
150
30°
60°
90°
120°
Maximum Allowable Case Temperature (°C)
140
0 2 4 6 8 101214
180°
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
T
= TJ maximum K/W
J
180
12F(R) Series
R (DC) = 2.0 K/W
thJC
170
160
Conducti on Period
150
30°
60°
140
90°
120°
180°
Maximum Allowable Case Temperature (°C)
130
048121620
Average Forward Current (A)
DC
14
180°
8
120°
90°
60°
30°
RMS Limit
12
10
6
4
2
Maximum Average Forward Power Loss (W)
0
Conducti on Angle
12F(R) Series
T = 175°C
J
02468101214
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
1
0
1
2
K
/
W
1
5
K
/
W
2
0
K
/
W
3
0
K
/
W
R
t
K
h
/
W
6
K
S
A
/
W
=
8
K
/
W
D
e
l
t
a
R
0255075100
Maximum Allowable Ambient Temperature (°C)
12F(R) Series
Vishay High Power Products
20
16
12
8
4
Maximum Average Forward Power Loss (W)
0
250
At Any Rated Load Condition And With
Rated V Applied Foll owing Surge.
225
RRM
200
DC
180°
120°
90°
60°
30°
RMS Limi t
0 4 8 121620
Average Forward Current (A)
Initi al T = 175°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Standard Recovery Diodes
(Stud Version), 12 A
R
t
h
S
A
8
1
0
K
1
2
K
/
1
5
K
/
W
2
0
K
/
W
Conducti on Period
3
0
K
/
W
12F(R) Series
T = 175°C
J
0255075100
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
=
K
/
W
/
W
W
1000
100
6
K
/
W
D
e
l
T = 25°C
J
t
a
R
T = 175°C
J
175
150
125
12F(R) Series
Peak Half Sine Wave Forward Current (A)
100
110100
Number Of Equal Amplitude Half Cycle Curr ent Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
275
Maxi mum Non Repet iti ve Surg e Cu r rent
250
225
Versus Pulse Train Durati on.
Initial T = 175°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
200
175
150
125
12F(R) Series
Peak Hal f Sine Wave Forward Curr ent (A)
100
0.01 0.1 1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
10
Instantaneous Forward Current (A)
12F(R) Series
1
0123456
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
10
Steady State Value
R = 2.0 K/W
thJC
thJC
(DC Operation)
1
12F(R) Series
Transient Thermal I mpedance Z (K/W)
0.1
0.001 0.01 0.1 1 10
Square Wave Pulse Duratio n (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
12F(R) Series
Standard Recovery Diodes
ORDERING INFORMATION TABLE
Device code
Vishay High Power Products
(Stud Version), 12 A
12 F R 120 M
51324
1 - Current rating: Code = I
2 - F = Standard device
3 - None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
4 - Voltage code x 10 = V
- None = Stud base DO-203AA (DO-4) 10-32UNF-2A
5
M = Stud base DO-203AA (DO-4) M5 x 0.8
(not available for avalanche diodes)
F(AV)
(see Voltage Ratings table)
RRM
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay High Power Products
DO-203AA (DO-4)
5.50 (0.22) MIN.
10.20 (0.40)
MAX.
11.50 (0.45)
10.70 (0.42)
+ 0.3
2
0
+ 0.01
(0.08 )
3.30 (0.13)
4.00 (0.16)
0
10/32" UNF-2A
For metric devices: M5 x 0.8
Ø 1.80 ± 0.20
(Ø 0.07 ± 0.01)
3.50 (0.14)
0.8 ± 0.1
(0.03 ± 0.004)
R 0.40
R (0.02)
20.30 (0.80) MAX.
Ø 6.8 (0.27)
11 (0.43)
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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