DO-203AA (DO-4)
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Vishay High Power Products
Fast Recovery Diodes
(Stud Version), 6/12/16 A
FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• RoHS compliant
TYPICAL APPLICATIONS
• DC power supplies
RoHS
COMPLIANT
PRODUCT SUMMARY
I
F(AV)
6/12/16 A
• Converters
• Choppers
• Ultrasonic systems
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
•Inverters
SYMBOL CHARACTERISTICS
I
F(AV)
I
F(RMS)
I
FSM
2
I
t
2
I
√t 363 856 1452 1452 2290 I2√s
V
RRM
t
rr
T
J
Note
(1)
JEDEC registered values
TC = 100 °C 6
50 Hz 72 145 110 145 180
60 Hz 75
50 Hz 26 103 60 103 160
60 Hz 23 94 55 94 150
Range 50 to 400
Range - 65 to 150 °C
1N3879. TO
1N3883.
(1)
9.5199.519 25 A
(1)
1N3889. TO
1N3893.
(1)
12
(1)
150
(1)
See Recovery Characteristics table ns
6FL.. 12FL.. 16FL.. UNITS
61216A
115 150 190
50 to 1000 V
A
A2s
Document Number: 93138 For technical questions, contact: ind-modules@vishay.com
Revision: 26-Sep-08 1
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1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Vishay High Power Products
Fast Recovery Diodes
(Stud Version), 6/12/16 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
, MAXIMUM
V
RRM
TYPE
NUMBER
VOLTAGE
CODE
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
1N3879.
50 75
1N3880. 100 150
1N3881. 200 250
-
1N3882. 300 350
1N3883. 400 450
1N3889.
50 75
1N3890. 100 150
1N3891. 200 250
-
1N3892. 300 350
1N3893. 400 450
550 75
10 100 150
6FL..
12FL..
16FL..
20 200 275
40 400 500
60 600 725
80 800 950
100 1000 1250
Note
(1)
JEDEC registered values
V
RSM
NON-REPETITIVE
PEAK VOLTAGE
, MAXIMUM
V
I
MAXIMUM
RRM
AT T
= 25 °C
J
µA
(1)
15
(1)
25
I
MAXIMUM
RRM
AT T
= 100 °C
J
mA
(1)
1.0
(1)
3.0
50 - 6.0
I
MAXIMUM
RRM
AT T
= 150 °C
J
mA
(1)
3.0
(1)
5.0
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
Maximum average forward current
at case temperature
Maximum RMS current I
Maximum peak, one-cycle
non-repetitive forward current
Maximum I
Maximum I
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 363 856 1452 2290 A2√s
Maximum forward voltage drop V
I
F(AV)
F(RMS)
I
FSM
FM
180° conduction, half sine wave
DC
t = 10 ms
t = 8.3 ms 90 135 180 225
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms 33 78 130 210
t = 10 ms
t = 8.3 ms 23 55 94 150
TJ = 25 °C; IF = Rated I
T
= 100 °C; IFM = π x rated I
C
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
F(AV)
Sinusoidal
half wave,
initial
T
= 150 °C
J
(DC)
F(AV)
1N3879.
1N3883.
(1)
6
100 100 100 100 °C
9.5 9.5 19 25
85 130 170 215
72 110 145 180
(1)
75
36 86 145 230
26 60 103 160
(1)
1.4
(1)
1.5
Note
(1)
JEDEC registered values
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2 Revision: 26-Sep-08
6FL..
6
115
1.4
1.5
1N3889.
1N3893.
16FL.. UNITS
12FL..
(1)
12
16 A
A
(1)
150
190
A2s
(1)
(1)
1.4 V
1.5 V
1.4
1.5
Document Number: 93138
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Fast Recovery Diodes
Vishay High Power Products
(Stud Version), 6/12/16 A
RECOVERY CHARACTERISTICS
6FL..
PARAMETER SYMBOL TEST CONDITIONS
TJ = 25 °C, IF = 1 A to VR = 30 V,
/dt = 100 A/µs
Maximum reverse
recovery time
Maximum peak
recovery current
t
I
RM(REC)IFM
dI
rr
F
= 25 °C, dIF/dt = 25 A/µs,
T
J
I
= π x rated I
FM
= π x rated I
F(AV)
F(AV)
TJ = 25 °C, IF = 1 A to VR = 30 V,
dI
Maximum reverse
recovery charge
Q
rr
/dt = 100 A/µs
F
= 25 °C, dIF/dt = 25 A/µs,
T
J
I
= π x rated I
FM
F(AV)
1N3879.
1N3883.
300
1N3889.
1N3893.
150 150 - -
(1)
(1)
4
300
5
(1)
(1)
400 350 - -
400 400 - -
Note
(1)
JEDEC registered values
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
Maximum junction operating
temperature range
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Allowable mounting torque
Approximate weight
Case style JEDEC DO-203AA (DO-4)
R
R
T
J
Stg
thJC
thCS
DC operation 2.5 2.0 1.6
Mounting surface, smooth,
flat and greased
Not lubricated threads
Lubricated threads
12FL..
16FL..
UNITS
S02 S05
ns
200 500
--
nC
1N3879.
1N3883.
1N3889.
1N3893.
6FL..
- 65 to 150
- 65 to 175
1.5
1.2
I
FM
12FL..
0.5
+ 0 - 10 %
(13)
+ 0 - 10 %
(10)
7g
0.25 oz.
t
rr
dir
dt
I
RM(REC)
Q
16FL.. UNITS
°C
°C/W
N · m
(lbf · in)
t
rr
Document Number: 93138 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 26-Sep-08 3
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Vishay High Power Products
Fast Recovery Diodes
(Stud Version), 6/12/16 A
ΔR
CONDUCTION ANGLE
Note
• The table above shows the increment of thermal resistance R
CONDUCTION
thJC
1N3879.
1N3883.
6FL..
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
180° 0.58 0.46 0.37 0.33 0.26 0.21
120° 0.60 0.48 0.39 0.58 0.46 0.37
60° 1.28 1.02 0.82 1.28 1.02 0.82
30° 2.20 1.76 1.41 2.20 1.76 1.41
1N3889.
1N3893.
12FL..
16FL..
1N3879.
1N3883.
6FL..
when devices operate at different conduction angles than DC
thJC
1N3889.
1N3893.
12FL..
16FL..
TEST CONDITIONS UNITS
T
= 150 °C K/W
J
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature,
1N3879 and 6FL Series
Fig. 2 - Average Forward Current vs.
Maximum Allowable Case Temperature,
1N3889 and 12FL Series
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4 Revision: 26-Sep-08
Fig. 4 - Reverse Recovery Time Test Waveform
Fig. 3 - Average Forward Current vs.
Maximum Allowable Case Temperature, 16FL Series
Document Number: 93138