Vishay 11DQ03, 11DQ04 Data Sheet
DO-204AL
Schottky Rectifier, 1.1 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
Cathode Anode
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free plating
• Designed and qualified for industrial level
11DQ03, 11DQ04
Vishay High Power Products
PRODUCT SUMMARY
I
F(AV)
V
R
1.1 A
30/40 V
DESCRIPTION
The 11DQ.. axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 1.1 A
30/40 V
tp = 5 µs sine 225 A
1 Apk, TJ = 25 °C 0.55 V
Range - 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 11DQ03 11DQ04 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
30 40 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy E
Repetitive avalanche current I
Document Number: 93205 For technical questions, contact: diodes-tech@vishay.com
Revision: 06-Nov-08 1
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 75 °C, rectangular waveform 1.1
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 35
TJ = 25 °C, IAS = 1.0 A, L = 6 mH 3.0 mJ
AS
Current decaying linearly to zero in 1 µs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
225
1.0 A
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A
11DQ03, 11DQ04
Vishay High Power Products
Schottky Rectifier, 1.1 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
1 A
Maximum forward voltage drop
See fig. 1
V
FM
2 A 0.71
(1)
1 A
2 A 0.61
Maximum reverse leakage current
See fig. 2
I
RM
Typical junction capacitance C
Typical series inductance L
T
S
TJ = 25 °C
(1)
T
= 125 °C 6.0
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 60 pF
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.55
0.50
1.0
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
junction to lead
Approximate weight
Marking device Case style DO-204AL (DO-41)
Note
dP
(1)
------------dT
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------<
R
thJA
(1)
, T
T
J
Stg
R
thJA
R
thJL
DC operation
Without cooling fin
DC operation
See fig. 4
- 40 to 150 °C
100
81
0.33 g
0.012 oz.
11DQ03
11DQ04
V
mA
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93205
2 Revision: 06-Nov-08
5
11DQ03, 11DQ04
10
(A)
F
1
Instantaneous Forward Current - I
T = 150˚C
J
T = 125˚C
J
T = 25˚C
J
Schottky Rectifier, 1.1 A
(pF)
Junction Capacitance - C
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Vishay High Power Products
100
T
10
01020304050
150
120
90
T = 25˚C
J
Reverse Voltage - VR (V)
DC
0.1
0 0.3 0.6 0.9 1.2 1.
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
T = 150˚C
10
J
(mA)
R
1
125˚C
0.1
0.01
0.001
25˚C
Reverse Current - I
0.0001
010203040
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
60
Square wave (D = 0.50)
80% Rated V applied
R
30
Allowable Case Temperature - (°C)
see note (1)
0
0 0.3 0.6 0.9 1.2 1.5
Average Forward Current - I
F
(A)
(AV)
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current
0.8
D = 0.20
D = 0.25
D = 0.33
0.6
D = 0.50
D = 0.75
0.4
RMS Limit
DC
0.2
Average Power Loss - (Watts)
0
0 0.3 0.6 0.9 1.2 1.5
Average Forward Current - IF
(AV)
(A)
Fig. 5 - Forward Power Loss Characteristics
Note
(1)
Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
F(AV)
) x R
REV
x VFM at (I
;
thJC
/D) (see fig. 6); Pd
F(AV)
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
R
Document Number: 93205 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 06-Nov-08 3
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