Vishay 110RKI...PbF Series, 111RKI...PbF Series Data Sheet

TO-209AC (TO-94)

PRODUCT SUMMARY

I

T(AV)

110RKI...PbF/111RKI...PbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 110 A

FEATURES

• High current and high surge ratings

• Hermetic ceramic housing

• RoHS compliant

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

110 A

• Controlled DC power supplies

• AC controllers

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 2080

60 Hz 2180

50 Hz 21.7

60 Hz 19.8

Typical 110 µs

110 A

90 °C

172

400 to 1200 V

- 40 to 140 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

, MAXIMUM

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

J

TYPE NUMBER

110RKI
111RKI

V

DRM/VRRM

VOLTAGE

CODE

40 400 500

80 800 900

120 1200 1300

REPETITIVE PEAK AND

OFF-STATE VOLTAGE

A

kA2s

MAXIMUM

= TJ MAXIMUM

mA

20

Document Number: 94379 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

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110RKI...PbF/111RKI...PbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 110 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 217 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

180° conduction, half sine wave

DC at 83 °C case temperature 172

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 2180

t = 10 ms

t = 8.3 ms 1830

t = 10 ms

t = 8.3 ms 19.8

t = 10 ms

t = 8.3 ms 14.0

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.57 V

TJ = 25 °C, anode supply 6 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 1.02

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 1.70

T(AV)

), TJ = TJ maximum 0.82

T(AV)

), TJ = TJ maximum 2.16

T(AV)

110 A

90 °C

2080

1750

21.7

15.3

200

400

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/µs
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 25 Ω

R

DRM

300 A/µs

1

µs

110

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum rated V

DRM/VRRM

DRM

500 V/µs

applied 20 mA

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Document Number: 94379

2 Revision: 11-Aug-08

110RKI...PbF/111RKI...PbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 110 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

GM

TJ = TJ maximum, tp ≤ 5 ms 12

TJ = TJ maximum, f = 50 Hz, d% = 50 3.0

TJ = TJ maximum, tp ≤ 5 ms

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GD

GT

GD

= 25 °C 80 120

J

T

= 140 °C 40 -

J

TJ = - 40 °C 2.5 -

= 25 °C 1.6 2

T

J

= 140 °C 1 -

T

J

TJ = TJ maximum

Maximum required gate
trigger/current/voltage are the
lowest value which will
trigger all units 12 V
anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V

DRM

anode to cathode applied

VALUES

TYP. MAX.

3.0 A

20

10

180 -

6.0 mA

0.25 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to case R

Maximum thermal resistance, case to heatsink R

J

Stg

thJC

thCS

DC operation 0.27

Mounting surface, smooth, flat and greased 0.1

Non-lubricated threads

Mounting torque, ± 10 %

Lubricated threads

Approximate weight 130 g

Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE

SINUSOIDAL

CONDUCTION

RECTANGULAR

CONDUCTION

TEST CONDITIONS UNITS

180° 0.043 0.031

120° 0.052 0.053

T

90° 0.066 0.071

= TJ maximum K/W

J

60° 0.096 0.101

30° 0.167 0.169

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

- 40 to 140

- 40 to 150

15.5

(137)

14

(120)

(lbf · in)

°C

K/W

N · m

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110RKI...PbF/111RKI...PbF Series

Vishay High Power Products

140

130

120

110

100

Maximum Allowable

Case Temperature (°C)

90

80

0

20

Average On-State Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

160

140

120

100

Maximum Average

On-State Power Loss (W)

180°
120°

90°
60°

80

60

40

20

30°

0

0

20

Average On-State Current (A)

111RKI Series
R

thJC

30°

40

40

(DC) = 0.27 K/W

Conduction angle

90°

60°

60

80

Conduction angle

111RKI Series
T

J

60

80

Phase Control Thyristors

(Stud Version), 110 A

Ø

Maximum Allowable

120°

180°

100

120

RMS limit

Ø

= 140 °C

100

120

Fig. 3 - On-State Power Loss Characteristics

Case Temperature (°C)

Maximum Average

On-State Power Loss (W)

140

130

120

110

100

160

140

120

100

90

80

70

80

60

40

20

0

111RKI Series

(DC) = 0.27 K/W

R

thJC

30°

60°

90°

4020 60 80 160 180100 120 1400

Average On-State Current (A)

R

40

thSA

= 0.3 K/W - ΔR

60

0.6 K/W

0.8 K/W

1 K/W

1.5 K/W

2 K/W

4 K/W

5 K/W

0

20

Maximum Allowable

Ambient Temperature (°C)

Conduction period

120°

180°

80

100

Ø

DC

140

120

220

200

180

160

140

120

100

80

Maximum Average

60

40

On-State Power Loss (W)

20

0

0

DC
180°
120°

90°

60°

30°

4020 60

Average On-State Current (A)

Conduction period

111RKI Series

T

80

100 120 140 160

RMS limit

Ø

= 140 °C

J

180

220

200

180

160

140

120

100

Maximum Average

On-State Power Loss (W)

R

thSA

= 0.3 K/W - ΔR

0.6 K/W

0.8 K/W

1 K/W

1.5 K/W

80

2 K/W

60

40

4 K/W

20

5 K/W

0

20

0

40

60

80

100

Maximum Allowable

120

140

Ambient Temperature (°C)

Fig. 4 - On-State Power Loss Characteristics

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Document Number: 94379

4 Revision: 11-Aug-08

2000

110RKI...PbF/111RKI...PbF Series

At any rated load condition and with
rated V

1800

1600

1400

1200

Peak Half Sine Wave

On-State Current (A)

1000

111RKI Series

800

1

Number of Equal Amplitude Half

Fig. 5 - Maximum Non-Repetitive Surge Current

applied following surge

RRM

Initial T

at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

10

Cycle Current Pulse (N)

10 000

Phase Control Thyristors

(Stud Version), 110 A

= 140 °C

J

Peak Half Sine Wave

100

1000

TJ = 25 °C

Vishay High Power Products

2500

Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.

2000

1500

1000

On-State Current (A)

111RKI Series

500

0.01

0.1 1.0

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

= 140 °C

Initial T

J

No voltage reapplied
Rated V

RRM

reapplied

10

1.0

Steady state value
R

thJC

(DC operation)

0.1

0.01

- Transient Thermal
Impedance (K/W)

thJC

Z

0.001

0.0001 0.001 0.01 0.1

= 0.27 K/W

100

10

111RKI Series

Instantaneous On-State Current (A)

1

0

1

2

3

Instantaneous On-State Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

111RKI Series

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

T

= 140 °C

J

4

Characteristic

thJC

5

1.0 10

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Revision: 11-Aug-08 5

110RKI...PbF/111RKI...PbF Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 30 Ω
t

≤ 0.5 µs, tp ≥ 6 µs

r

b) Recommended load line for

10

≤ 30 % rated dI/dt: 15 V, 40 Ω

≤ 1 µs, tp ≥ 6 µs

t

r

1.0

V

Instantaneous Gate Voltage (V)

0.1

0.001

ORDERING INFORMATION TABLE

GD

I

GD

0.01

Device code

Phase Control Thyristors

(Stud Version), 110 A

(a)

(b)

T

J

= 40 °C

T

J

T

= 25 °C

J

= 140 °C

Device: 111RKI Series

0.1

1.0

Instantaneous Gate Current (A)

Fig. 9 - Gate Characteristics

11 0 RKI 120 PbF

Frequency limited by P

(1) PGM = 12 W, tp = 5 ms
(2) P

= 30 W, tp = 2 ms

GM

= 60 W, tp = 1 ms

(3) P

GM

= 200 W, tp = 300 µs

(4) P

GM

(3)

(2)

(1)

G(AV)

10

100 1000

(4)

51324

1

-I

2

- 0 = Eyelet terminals (gate and auxiliary cathode leads)

rated average output current (rounded/10)

T(AV)

1 = Fast-on terminals (gate and auxiliary cathode leads)

3

- Thyristor

4

- Voltage code x 100 = V

5

- Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95003

(see Voltage Ratings table)

RRM

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Document Number: 94379

6 Revision: 11-Aug-08

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1

TO-209AC (TO-94) for 110RKI and 111RKI Series

DIMENSIONS in millimeters (inches)

Ceramic housing

16.5 (0.65) MAX.

Outline Dimensions

Vishay High Power Products

2.6 (0.10) MAX.

157 (6.18)

170 (6.69)

55 (2.16)

MIN.

24 (0.94)

MAX.

Ø 8.5 (0.33)

Red silicon rubber

Red cathode

Red shrink

10 (0.39) MAX.

21 (0.83)

MAX.

1/2"-20UNF-2A

29.5 (1.16) MAX.

Ø 4.3 (0.17)

C.S. 0.4 mm

(0.0006 s.i.)

White gate

White shrink

Ø 22.5 (0.88) MAX.

SW 27

2

(8.46 ± 0.39)

215 ± 10

Flexible lead

C.S. 16 mm

(0.025 s.i.)

Fast-on terminals

AMP. 280000-1

9.5 (0.37) MIN.

20 (0.79) MIN.

2

REF-250

Note

• For metric device: M12 x 1.75 contact factory

Document Number: 95363 For technical questions concerning discrete products, contact: [e-mail]
Revision: 25-Sep-08 For technical questions concerning module products, contact: [e-mail]

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1