Vishay 110RKI...PbF Series, 111RKI...PbF Series Data Sheet

110RKI...PbF/111RKI...PbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 110 A

FEATURES

• High current and high surge ratings

• Hermetic ceramic housing

RoHS

COMPLIANT

• RoHS compliant

• Lead (Pb)-free

• Designed and qualified for industrial level

TO-209AC (TO-94)

TYPICAL APPLICATIONS

• DC motor controls

PRODUCT SUMMARY

IT(AV)

110 A

• Controlled DC power supplies

• AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

TEST CONDITIONS

VALUES

UNITS

IT(AV)

110

A

TC

90

°C

IT(RMS)

172

ITSM

50 Hz

2080

A

60 Hz

2180

I2t

50 Hz

21.7

kA2s

60 Hz

19.8

VDRM/VRRM

400 to 1200

V

tq

Typical

110

µs

TJ

- 40 to 140

°C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

VDRM/VRRM, MAXIMUM

VRSM, MAXIMUM

IDRM/IRRM MAXIMUM

VOLTAGE

REPETITIVE PEAK AND

TYPE NUMBER

NON-REPETITIVE PEAK VOLTAGE

AT TJ = TJ MAXIMUM

CODE

OFF-STATE VOLTAGE

V

mA

V

40

400

500

110RKI

20

80

800

900

111RKI

120

1200

1300

Document Number: 94379	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 11-Aug-08		1

110RKI...PbF/111RKI...PbF Series

Vishay High Power Products Phase Control Thyristors

(Stud Version), 110 A

ABSOLUTE MAXIMUM RATINGS

	PARAMETER	SYMBOL		TEST CONDITIONS		VALUES	UNITS
	Maximum average on-state current	IT(AV)	180° conduction, half sine wave			110	A
	at case temperature					90	°C
	Maximum RMS on-state current	IT(RMS)	DC at 83 °C case temperature			172
			t = 10 ms	No voltage		2080
	Maximum peak, one-cycle	ITSM	t = 8.3 ms	reapplied		2180	A
	non-repetitive surge current		t = 10 ms	100 % VRRM		1750
			t = 8.3 ms	reapplied	Sinusoidal half wave,	1830
			t = 10 ms	No voltage	initial TJ = TJ maximum	21.7
				reapplied
	Maximum I2t for fusing	I2t	t = 8.3 ms			19.8	kA2s
			t = 10 ms	100 % VRRM		15.3
			t = 8.3 ms	reapplied		14.0
	Maximum I2√t for fusing	I2√t	t = 0.1 to 10 ms, no voltage reapplied			217	kA2√s
	Low level value of threshold voltage	VT(TO)1	(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum			0.82	V
	High level value of threshold voltage	VT(TO)2	(I > π x IT(AV)), TJ = TJ maximum			1.02
	Low level value of on-state slope resistance	rt1	(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum			2.16	mΩ
	High level value of on-state slope resistance	rt2	(I > π x IT(AV)), TJ = TJ maximum			1.70
	Maximum on-state voltage	VTM	Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse			1.57	V
	Maximum holding current	IH	TJ = 25 °C, anode supply 6 V resistive load			200	mA
	Typical latching current	IL				400

SWITCHING

	PARAMETER	SYMBOL	TEST CONDITIONS	VALUES	UNITS
	Maximum non-repetitive rate of	dI/dt	Gate drive 20 V, 20 Ω, tr ≤ 1 µs	300	A/µs
	rise of turned-on current		TJ = TJ maximum, anode voltage ≤ 80 % VDRM
	Typical delay time	td	Gate current 1 A, dIg/dt = 1 A/µs	1
			Vd = 0.67 % VDRM, TJ = 25 °C
					µs
	Typical turn-off time	tq	ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/µs	110
			VR = 50 V, dV/dt = 20 V/µs, gate 0 V 25 Ω

BLOCKING

	PARAMETER	SYMBOL	TEST CONDITIONS	VALUES	UNITS
	Maximum critical rate of rise of	dV/dt	TJ = TJ maximum linear to 80 % rated VDRM	500	V/µs
	off-state voltage
	Maximum peak reverse and	IRRM,	TJ = TJ maximum rated VDRM/VRRM applied	20	mA
	off-state leakage current	IDRM

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 94379
2		Revision: 11-Aug-08

110RKI...PbF/111RKI...PbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 110 A

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

TYP.

MAX.

Maximum peak gate power

PGM

TJ = TJ maximum, tp ≤ 5 ms

12

W

Maximum average gate power

PG(AV)

TJ = TJ maximum, f = 50 Hz, d% = 50

3.0

Maximum peak positive gate current

IGM

3.0

A

Maximum peak positive gate voltage

+ VGM

TJ = TJ maximum, tp ≤ 5 ms

20

V

Maximum peak negative gate voltage

- VGM

10

TJ = - 40 °C

180

-

DC gate current required to trigger

IGT

TJ = 25 °C

Maximum required gate

80

120

mA

trigger/current/voltage are the

TJ = 140 °C

40

-

lowest value which will

TJ = - 40 °C

2.5

-

trigger all units 12 V

DC gate voltage required to trigger

VGT

TJ = 25 °C

anode to cathode applied

1.6

2

V

TJ = 140 °C

1

-

DC gate current not to trigger

IGD

Maximum gate current/voltage

6.0

mA

not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any

DC gate voltage not to trigger

VGD

unit with rated VDRM

0.25

V

anode to cathode applied

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum operating junction temperature range

TJ

- 40 to 140

°C

Maximum storage temperature range

TStg

- 40 to 150

Maximum thermal resistance, junction to case

RthJC

DC operation

0.27

K/W

Maximum thermal resistance, case to heatsink

RthCS

Mounting surface, smooth, flat and greased

0.1

Non-lubricated threads

15.5

(137)

N · m

Mounting torque, ± 10 %

(lbf · in)

Lubricated threads

14

(120)

Approximate weight

130

g

Case style

See dimensions - link at the end of datasheet

TO-209AC (TO-94)

RthJC CONDUCTION

CONDUCTION ANGLE

SINUSOIDAL

RECTANGULAR

TEST CONDITIONS

UNITS

CONDUCTION

CONDUCTION

180°

0.043

0.031

120°

0.052

0.053

TJ = TJ maximum

90°

0.066

0.071

K/W

60°

0.096

0.101

30°

0.167

0.169

Note

• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Document Number: 94379

For technical questions, contact: [e-mail]

www.vishay.com

Revision: 11-Aug-08

3