Vishay 110RKI...PbF Series, 111RKI...PbF Series Data Sheet

TO-209AC (TO-94)

PRODUCT SUMMARY

I

T(AV)

110RKI...PbF/111RKI...PbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 110 A

FEATURES

• High current and high surge ratings

• Hermetic ceramic housing

• RoHS compliant

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

110 A

• Controlled DC power supplies

• AC controllers

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 2080

60 Hz 2180

50 Hz 21.7

60 Hz 19.8

Typical 110 µs

110 A

90 °C

172

400 to 1200 V

- 40 to 140 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

, MAXIMUM

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

J

TYPE NUMBER

110RKI
111RKI

V

DRM/VRRM

VOLTAGE

CODE

40 400 500

80 800 900

120 1200 1300

REPETITIVE PEAK AND

OFF-STATE VOLTAGE

A

kA2s

MAXIMUM

= TJ MAXIMUM

mA

20

Document Number: 94379 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

www.vishay.com

110RKI...PbF/111RKI...PbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 110 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 217 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

180° conduction, half sine wave

DC at 83 °C case temperature 172

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 2180

t = 10 ms

t = 8.3 ms 1830

t = 10 ms

t = 8.3 ms 19.8

t = 10 ms

t = 8.3 ms 14.0

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.57 V

TJ = 25 °C, anode supply 6 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 1.02

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 1.70

T(AV)

), TJ = TJ maximum 0.82

T(AV)

), TJ = TJ maximum 2.16

T(AV)

110 A

90 °C

2080

1750

21.7

15.3

200

400

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/µs
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 25 Ω

R

DRM

300 A/µs

1

µs

110

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum rated V

DRM/VRRM

DRM

500 V/µs

applied 20 mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94379

2 Revision: 11-Aug-08

110RKI...PbF/111RKI...PbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 110 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

GM

TJ = TJ maximum, tp ≤ 5 ms 12

TJ = TJ maximum, f = 50 Hz, d% = 50 3.0

TJ = TJ maximum, tp ≤ 5 ms

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GD

GT

GD

= 25 °C 80 120

J

T

= 140 °C 40 -

J

TJ = - 40 °C 2.5 -

= 25 °C 1.6 2

T

J

= 140 °C 1 -

T

J

TJ = TJ maximum

Maximum required gate
trigger/current/voltage are the
lowest value which will
trigger all units 12 V
anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V

DRM

anode to cathode applied

VALUES

TYP. MAX.

3.0 A

20

10

180 -

6.0 mA

0.25 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to case R

Maximum thermal resistance, case to heatsink R

J

Stg

thJC

thCS

DC operation 0.27

Mounting surface, smooth, flat and greased 0.1

Non-lubricated threads

Mounting torque, ± 10 %

Lubricated threads

Approximate weight 130 g

Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE

SINUSOIDAL

CONDUCTION

RECTANGULAR

CONDUCTION

TEST CONDITIONS UNITS

180° 0.043 0.031

120° 0.052 0.053

T

90° 0.066 0.071

= TJ maximum K/W

J

60° 0.096 0.101

30° 0.167 0.169

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

- 40 to 140

- 40 to 150

15.5

(137)

14

(120)

(lbf · in)

°C

K/W

N · m

Document Number: 94379 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 11-Aug-08 3