Vishay 10WQ045FNPBF Data Sheet

10WQ045FNPbF

Vishay High Power Products

Schottky Rectifier, 10 A

					FEATURES
					• Popular D-PAK outline
		Base			• Small foot print, surface mountable
		cathode			• Low forward voltage drop
			4, 2
					• High frequency operation
					• Guard ring for enhanced ruggedness and long term
		1		3	reliability
D-PAK (TO-252AA)
	Anode		Anode		• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

PRODUCT SUMMARY

IF(AV)	10 A
VR	45 V

DESCRIPTION

The 10WQ045FN surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL	CHARACTERISTICS	VALUES	UNITS
IF(AV)	Rectangular waveform	10	A
VRRM		45	V
IFSM	tp = 5 µs sine	400	A
VF	10 Apk, TJ = 125 °C	0.53	V
TJ	Range	- 40 to 175	°C

VOLTAGE RATINGS

	PARAMETER	SYMBOL	10WQ045FNPbF	UNITS
	Maximum DC reverse voltage	VR	45	V
	Maximum working peak reverse voltage	VRWM

ABSOLUTE MAXIMUM RATINGS

	PARAMETER	SYMBOL	TEST CONDITIONS			VALUES	UNITS
	Maximum average forward current	IF(AV)	50 % duty cycle at TC = 157 °C, rectangular waveform			10	A
	See fig. 5
	Maximum peak one cycle		5 µs sine or 3 µs rect. pulse		Following any rated	400
	non-repetitive surge current	IFSM			load condition and with		A
			10 ms sine or 6 ms rect. pulse			75
	See fig. 7				rated VRRM applied
	Non-repetitive avalanche energy	EAS	TJ = 25 °C, IAS = 3 A, L = 4.4 mH			20	mJ
	Repetitive avalanche current	IAR	Current decaying linearly to zero in 1 µs			3.0	A
			Frequency limited by TJ maximum VA = 1.5 x VR typical

Document Number: 94122	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 08-Jul-09		1

10WQ045FNPbF

Vishay High Power Products					Schottky Rectifier, 10 A
	ELECTRICAL SPECIFICATIONS
	PARAMETER			SYMBOL		TEST CONDITIONS		VALUES	UNITS
						10 A	TJ = 25 °C	0.63
	Maximum forward voltage drop			VFM (1)		20 A		0.80	V
	See fig. 1					10 A	TJ = 125 °C	0.53
						20 A		0.71
	Maximum reverse leakage current			IRM (1)		TJ = 25 °C	VR = Rated VR	1	mA
	See fig. 2					TJ = 125 °C		15
	Threshold voltage			VF(TO)		TJ = TJ maximum		0.255	V
	Forward slope resistance			rt				22	mΩ
	Typical junction capacitance			CT		VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C		760	pF
	Typical series inductance			LS		Measured lead to lead 5 mm from package body		5.0	nH
Note
(1)	Pulse width < 300 µs, duty cycle < 2 %
	THERMAL - MECHANICAL SPECIFICATIONS
	PARAMETER			SYMBOL		TEST CONDITIONS		VALUES	UNITS
	Maximum junction and storage			TJ (1), TStg				- 40 to 175	°C
	temperature range
	Maximum thermal resistance,			RthJC		DC operation		2.0
	junction to case					See fig. 4
									°C/W
	Maximum thermal resistance,			RthJA				50
	junction to ambient
	Approximate weight							0.3	g
								0.01	oz.
	Marking device					Case style D-PAK (similar to TO-252AA)		10WQ045FN
Note
(1)	dPtot	1
	------------- < -------------- thermal runaway condition for a diode on its own heatsink
	dTJ	RthJA

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 94122
2		Revision: 08-Jul-09

10WQ045FNPbF

Schottky Rectifier, 10 A Vishay High Power Products

<![if ! IE]> <![endif]>InstantaneousForward	100										<![if ! IE]> <![endif]>ReverseCurrent (mA)
	<![if ! IE]> <![endif]>Current(A)
	10							TJ = 175 °C
								TJ = 125 °C
								TJ = 25 °C
<![if ! IE]> <![endif]>F
<![if ! IE]> <![endif]>I
	1
	0	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0

1000

TJ = 175 °C

100

TJ = 150 °C

10 TJ = 125 °C

1 TJ = 100 °C

TJ = 75 °C

0.1

TJ = 50 °C

0.01

TJ = 25 °C

0.001

0.0001

0

10

20

30

40

50

VFM - Forward Voltage Drop (V)	VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics	Fig. 2 - Typical Values of Reverse Current vs.
	Reverse Voltage

<![if ! IE]>

<![endif]>CT - Junction Capacitance (pF)

10 000

1000

TJ = 25 °C

100

0

10

20

30

40

50

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

<![if ! IE]> <![endif]>(°C/W)	10
<![if ! IE]> <![endif]>Impedance	1
						PDM
				D = 0.75
<![if ! IE]> <![endif]>Thermal						t1
				D = 0.50
	0.1			D = 0.33		t2
			Single pulse	D = 0.25
				D = 0.20		Notes:
<![if ! IE]> <![endif]>-		(thermal resistance)
<![if ! IE]> <![endif]>thJC						1. Duty factor D = t1/t2 .
						2. Peak TJ = PDM x ZthJC	+ TC	.
<![if ! IE]> <![endif]>Z	0.01
	0.00001	0.0001	0.001	0.01	0.1	1		10

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Document Number: 94122	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 08-Jul-09		3