Vishay 10WQ045FNPBF Data Sheet

D-PAK (TO-252AA)

PRODUCT SUMMARY

I

F(AV)

V

R

Schottky Rectifier, 10 A

FEATURES

• Popular D-PAK outline

1

Anode

Base

cathode

4, 2

3

Anode

10 A

45 V

• Small foot print, surface mountable

• Low forward voltage drop

• High frequency operation

• Guard ring for enhanced ruggedness and long term
reliability

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

DESCRIPTION

The 10WQ045FN surface mount Schottky rectifier has been
designed for applications requiring low forward drop and
small foot prints on PC board. Typical applications are in
disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.

10WQ045FNPbF

Vishay High Power Products

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

I

FSM

V

F

T

J

Rectangular waveform 10 A

45 V

tp = 5 µs sine 400 A

10 Apk, TJ = 125 °C 0.53 V

Range - 40 to 175 °C

VOLTAGE RATINGS

PARAMETER SYMBOL 10WQ045FNPbF UNITS

Maximum DC reverse voltage V

Maximum working peak reverse voltage V

R

RWM

45 V

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current
See fig. 5

Maximum peak one cycle
non-repetitive surge current
See fig. 7

Non-repetitive avalanche energy E

Repetitive avalanche current I

I

F(AV)

I

FSM

AR

50 % duty cycle at TC = 157 °C, rectangular waveform 10 A

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse 75

TJ = 25 °C, IAS = 3 A, L = 4.4 mH 20 mJ

AS

Current decaying linearly to zero in 1 µs
Frequency limited by T

maximum VA = 1.5 x VR typical

J

Following any rated
load condition and with
rated V

RRM

applied

400

A

3.0 A

Document Number: 94122 For technical questions, contact: [e-mail]
Revision: 08-Jul-09 1

www.vishay.com

10WQ045FNPbF

Vishay High Power Products

Schottky Rectifier, 10 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop
See fig. 1

Maximum reverse leakage current
See fig. 2

V

I

RM

Threshold voltage V

Forward slope resistance r

Typical junction capacitance C

Typical series inductance L

FM

F(TO)

t

T

S

10 A

20 A 0.80

(1)

10 A

20 A 0.71

TJ = 25 °C

(1)

T

= 125 °C 15

J

T

= 25 °C

J

= 125 °C

T

J

V

= Rated V

R

R

TJ = TJ maximum

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 760 pF

Measured lead to lead 5 mm from package body 5.0 nH

0.63

0.53

1

0.255 V

22 mΩ

Note

(1)

Pulse width < 300 µs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Approximate weight

Marking device Case style D-PAK (similar to TO-252AA) 10WQ045FN

Note

dP

(1)

------------­dT

1

tot

J

thermal runaway condition for a diode on its own heatsink

--------------<
R

thJA

(1)

, T

T

J

Stg

R

thJC

R

thJA

DC operation
See fig. 4

- 40 to 175 °C

2.0

50

0.3 g

0.01 oz.

V

mA

°C/W

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94122

2 Revision: 08-Jul-09

10WQ045FNPbF

100

10

Current (A)

- Instantaneous Forward

F

I

1

0 0.4 0.6 0.8 2.0

0.2

VFM - Forward Voltage Drop (V)

1.0 1.2

Schottky Rectifier, 10 A

= 175 °C

T

J

T

= 125 °C

J

TJ = 25 °C

1.6 1.8

1.4

Reverse Current (mA)

Vishay High Power Products

1000

100

10

0.1

0.01

0.001

0.0001

1

0

TJ = 125 °C

TJ = 100 °C

TJ = 75 °C

TJ = 50 °C

TJ = 25 °C

10 20

VR - Reverse Voltage (V)

TJ = 175 °C

TJ = 150 °C

30

Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

10 000

5040

1000

TJ = 25 °C

- Junction Capacitance (pF)

T

C

100

0

20 30

40

5010

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10

1

P

D = 0.75
D = 0.50

0.1

Single pulse

- Thermal Impedance (°C/W)

thJC

Z

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

(thermal resistance)

D = 0.33
D = 0.25
D = 0.20

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

DM

1/t2

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

Characteristics

thJC

t

1

thJC

t

2

.

+ T

C

.

Document Number: 94122 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 08-Jul-09 3