Vishay 10WQ045FN Data Sheet
Bulletin PD-20530 rev. F 03/03
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10WQ045FN |
SCHOTTKY RECTIFIER |
10 Amp |
Major Ratings and Characteristics
Characteristics |
10WQ045FN |
Units |
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IF(AV) |
Rectangular |
10 |
A |
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waveform |
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VRRM |
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45 |
V |
IFSM |
@ tp = 5 µs sine |
400 |
A |
VF |
@10Apk,TJ=125°C |
0.53 |
V |
TJ |
range |
- 40 to 175 |
°C |
D-Pak (TO-252AA)
Description/ Features
The 10WQ045FN surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection.
Popular D-PAK outline
Small foot print, surface moutable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
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2.38 (0.09) |
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6.73 (0.26) |
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2.19 (0.08) |
MINIMUM RECOMMENDED FOOTPRINT |
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6.35 (0.25) |
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1.14 (0.04) |
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0.89 (0.03) |
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5.46 (0.21) |
1.27 (0.05) |
0.58 (0.02) |
5.97 (0.24) |
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5.21 (0.20) |
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0.88 (0.03) |
0.46 (0.02) |
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4 |
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6.45 (0.24) |
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1.64 (0.02) |
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6.22 (0.24) |
5.68 (0.22) |
6.48 (0.26) |
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5.97 (0.23) |
10.42 (0.41) |
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10.67 (0.42) |
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1 |
2 |
3 |
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9.40 (0.37) |
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0.51 (0.02) |
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1.52 (0.06) |
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MIN. |
2x |
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1.15 (0.04) |
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2.54 (0.10) |
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2.28 (0.09) |
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0.89 (0.03) |
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1.14 (0.04) |
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3x |
0.58 (0.02) |
1.65 (0.06) |
2x |
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2x |
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0.64 (0.02) |
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0.46 (0.02) |
2x |
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0.76 (0.03) |
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1 |
- Anode |
Base |
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2.28 (0.09) |
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Cathode |
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2x |
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2 |
- Cathode |
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4, 2 |
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4.57 (0.18) |
3 |
- Anode |
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4 |
- Cathode |
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Conform to JEDEC outline D-Pak (Similar to TO-252AA) |
1 |
3 |
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Dimensions in millimeters and (inches) |
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Anode |
Anode |
www.irf.com |
1 |
10WQ045FN
Bulletin PD-20530 rev. F 03/03
Voltage Ratings
Part number |
10WQ045FN |
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VR Max. DC Reverse Voltage (V) |
45 |
VRWM Max. Working Peak Reverse Voltage (V) |
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Absolute Maximum Ratings
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Parameters |
10WQ... |
Units |
Conditions |
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IF(AV) |
Max.AverageForwardCurrent |
10 |
A |
50% dutycycle@ TC =157°C,rectangularwaveform |
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* See Fig. 5 |
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IFSM |
Max.PeakOneCycleNon-Repet. |
400 |
A |
5µs Sine or 3µs Rect. pulse |
Following any rated |
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load condition and with |
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Surge Current * See Fig. 7 |
75 |
10ms Sine or 6ms Rect. pulse |
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rated VRRM applied |
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EAS |
Non-RepetitiveAvalancheEnergy |
20 |
mJ |
TJ = 25 °C, IAS = 3.0 Amps, L = 4.40 mH |
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IAR |
RepetitiveAvalancheCurrent |
3.0 |
A |
Currentdecayinglinearlytozeroin1µsec |
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Frequency limited by TJ max. VA = 1.5 x VR typical |
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Electrical Specifications
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Parameters |
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10WQ... |
Units |
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Conditions |
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VFM |
Max. Forward Voltage Drop |
0.630 |
V |
@ 10A |
TJ = |
25 °C |
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* See Fig. 1 |
(1) |
0.800 |
V |
@ 20A |
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0.530 |
V |
@ 10A |
TJ = |
125 °C |
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0.710 |
V |
@ 20A |
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IRM |
Max. Reverse Leakage Current |
1 |
mA |
TJ = 25 °C |
VR = rated VR |
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* See Fig. 2 |
(1) |
15 |
mA |
TJ = 125 °C |
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VF(TO) Threshold Voltage |
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0.255 |
V |
TJ = TJ max. |
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rt |
Forward Slope Resistance |
22 |
mΩ |
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C T |
Typical Junction Capacitance |
760 |
pF |
V R = 5V DC (test signal range 100Khz to 1Mhz) 25 °C |
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LS |
Typical Series Inductance |
5.0 |
nH |
Measured lead to lead 5mm from package body |
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(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
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Parameters |
10WQ... |
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Units |
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Conditions |
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TJ |
Max.JunctionTemp.Range(*) |
- 40to175 |
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°C |
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Tstg |
Max.StorageTemperatureRange |
- 40 to 175 |
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°C |
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R |
Max.ThermalResistanceJunction |
2.0 |
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°C/W |
DCoperation |
* See Fig. 4 |
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thJC |
to Case |
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RthJA |
Max.ThermalResistanceJunction |
50 |
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°C/W |
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toAmbient |
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wt |
Approximate Weight |
0.3(0.01) |
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g(oz.) |
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CaseStyle |
D - PAK |
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Similar to TO-252AA |
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(*) dPtot |
1 |
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< |
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thermal runaway condition for a diode on its own heatsink |
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dTj |
Rth( j-a) |
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2 |
www.irf.com |
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