D2PAK
PRODUCT SUMMARY
VT at 6.5 A < 1.15 V
I
TSM
V
RRM
10TTS08SPbF High Voltage Series
Surface Mountable
Phase Control SCR, 10 A
DESCRIPTION/FEATURES
The 10TTS08SPbF High Voltage Series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology
used has reliable operation up to 125 °C junction
temperature.
Typical applications are in input rectification (soft start) and
these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines.
This product has been designed and qualified for industrial
level and lead (Pb)-free.
(A)
1 (K)
2
(G) 3
140 A
800 V
Vishay High Power Products
RoHS
COMPLIANT
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
NEMA FR-4 or G-10 glass fabric-based epoxy
with 4 oz. (140 µm) copper
Aluminum IMS, R
Aluminum IMS with heatsink, R
Note
•T
= 55 °C, TJ = 125 °C, footprint 300 mm
A
= 15 °C/W 6.3 9.5
thCA
= 5 °C/W 14.0 18.5
thCA
2
2.5 3.5
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
RMS
V
RRM/VDRM
I
TSM
V
T
dV/dt 150 V/µs
dI/dt 100 A/µs
T
J
Sinusoidal waveform 6.5
10
800 V
140 A
6.5 A, TJ = 25 °C 1.15 V
Range - 40 to 125 °C
A
A
VOLTAGE RATINGS
, MAXIMUM
V
RRM
PART NUMBER
10TTS08SPbF 800 800 1.0
Document Number: 94562 For technical questions, contact: diodes-tech@vishay.com
Revision: 24-Apr-08 1
PEAK REVERSE VOLTAGE
V
V
, MAXIMUM PEAK
DRM
DIRECT VOLTAGE
V
I
RRM/IDRM
AT 125 °C
mA
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10TTS08SPbF High Voltage Series
Vishay High Power Products
Surface Mountable
Phase Control SCR, 10 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current I
Maximum RMS on-state current I
Maximum peak, one-cycle,
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√ t for fusing I 2√ t t = 0.1 to 10 ms, no voltage reapplied, T J = 125 °C 1000 A2√ s
Maximum on-state voltage drop V
On-state slope resistance r
Threshold voltage V
Maximum reverse and direct leakage current I
Typical holding current I
Maximum latching current I
Maximum rate of rise of off-state voltage dV/dt T
T(AV)
T(RMS)
I
TSM
TM
t
T(TO)
RM/IDM
H
L
TC = 112 °C, 180° conduction half sine wave
10
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied, T
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied, T
applied, TJ = 125 °C 120
RRM
= 125 °C 140
J
applied, TJ = 125 °C 72
RRM
= 125 °C 100
J
6.5 A, TJ = 25 °C 1.15 V
TJ = 125 °C
TJ = 25 °C
= 125 °C 1.0
T
J
V
= Rated V
R
RRM/VDRM
Anode supply = 6 V, resistive load, initial IT = 1 A 30
Anode supply = 6 V, resistive load 50
= 25 °C 150 V/µs
J
Maximum rate of rise of turned-on current dI/dt 100 A/µs
6.5
17.3 mΩ
0.85 V
0.05
A
A
mA
2
s
TRIGGERING
PARAMETER SYMBOL
P
+I
-V
P
GM
G(AV)
GM
GT
V
GT
V
GD
I
GD
GM
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum required DC gate current to trigger I
Maximum required DC gate
voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
Anode supply = 6 V, resistive load, TJ = - 65 °C
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, TJ = - 65 °C 1.2
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
TJ = 125 °C, V
TEST CONDITIONS
= Rated value
DRM
VALUES UNITS
= 25 °C 15
J
= 125 °C 10
J
= 25 °C 1
J
= 125 °C 0.7
J
8.0
2.0
W
1.5 A
10 V
20
mA Anode supply = 6 V, resistive load, T
V
0.2
0.1 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time t
Typical turn-off time t
gt
rr
q
TJ = 25 °C 0.8
TJ = 125 °C
3
100
µs Typical reverse recovery time t
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94562
2 Revision: 24-Apr-08
10TTS08SPbF High Voltage Series
Surface Mountable
Vishay High Power Products
Phase Control SCR, 10 A
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Soldering temperature T
Maximum thermal resistance,
junction to case
Typical thermal resistance,
junction to ambient (PCB mount)
Approximate weight
Marking device Case style D
Note
(1)
When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
T
, T
J
Stg
S
R
thJC
(1)
R
thJA
For 10 s (1.6 mm from case) 240
DC operation 1.5
2
PAK (SMD-220) 10TTS08S
- 40 to 125
40
2g
0.07 oz.
°C
°C/W
Document Number: 94562 For technical questions, contact: diodes-tech@vishay.com
Revision: 24-Apr-08 3
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10TTS08SPbF High Voltage Series
Vishay High Power Products
125
120
115
110
105
Maximum Allowable Case Temperature (°C)
01234567
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
125
120
115
30°
110
105
Maximum Allowable Case Temperature (°C)
024681 01 2
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
10T TS08
R (DC) = 1.5 K/W
thJC
Cond uct ion A ngle
30°
60°
90°
10TTS08
R (DC) = 1.5 K/W
thJC
Conduction Period
60°
90°
120°
180°
DC
120°
Surface Mountable
Phase Control SCR, 10 A
180°
12
DC
180°
10
120°
90°
60°
8
30°
6
RMS Limit
4
2
0
Maximum Average On-state Power Loss (W)
024681 01 2
Aver ag e On -st at e Cu rr en t (A)
Conduction Period
10T TS0 8
T = 125°C
J
Fig. 4 - On-State Power Loss Characteristics
130
At Any Rated Load Condition And With
Rated V Applied Following Surge.
10TTS08
RRM
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
120
110
100
90
80
70
Peak Half Sine Wave On-state Current (A)
60
11 01 0 0
Number Of Eq ual Amp litude Half Cycle Curr ent Pu lses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
8
7
6
5
4
3
2
1
0
Maximum Average On-state Power Loss (W)
01234567
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
10T TS0 8
T = 125°C
J
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
150
Maximum Non Repetitive Surge Current
140
130
120
110
100
90
80
70
60
Peak Half Sine Wave On-state Current (A)
50
Versus Pulse Train Duration. Control
Of Conduct ion May Not Be Maint ained.
10TTS08
0.01 0.1 1
Pulse Train Duration (s)
Initial T = 125
No Voltage Reapplied
Rated V Reapplied
RRM
°C
J
Fig. 6 - Maximum Non-Repetitive Surge Current
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Document Number: 94562
4 Revision: 24-Apr-08
10TTS08SPbF High Voltage Series
thJC
0.1
Surface Mountable
Vishay High Power Products
Phase Control SCR, 10 A
1000
10TTS08
100
T = 25°C
10
Instantaneous On-state Current (A)
1
0.5 1 1.5 2 2.5 3 3.5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
10
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single Pulse
J
T = 125°C
J
Steady State Value
(DC Operation)
10TTS08
Transient Thermal Impedance Z (°C/W)
0.01
0.0 001 0. 001 0. 01 0. 1 1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
Characteristics
thJC
Document Number: 94562 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 24-Apr-08 5
10TTS08SPbF High Voltage Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
10 T T S 08 S TRL PbF
1 - Current rating, RMS value
- Circuit configuration:
2
- Package:
3
4 - Type of silicon:
5 - Voltage code x 100 = V
6 - S = TO-220 D2PAK (SMD-220) version
7 - Tape and reel option:
-
8
Surface Mountable
Phase Control SCR, 10 A
5 13 24678
T = Single thyristor
T = TO-220AC
S = Converter grade
RRM
TRL = Left reel
TRR = Right orientation reel
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95046
Part marking information http://www.vishay.com/doc?95054
Packaging information http://www.vishay.com/doc?95032
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
6 Revision: 24-Apr-08
Document Number: 94562
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
DIMENSIONS in millimeters and inches
Outline Dimensions
Vishay High Power Products
D2PAK
Conforms to JEDEC outline D
(2)(3)
E
(3)
L1
D
L2
2 x
Lead assignments
Diodes
1. - Anode (tw o die)/open (one die)
2., 4. - Cathode
3. - Anode
4
13 2
BB
e
2
H
2 x b 2
2 x b
0.010
PAK (SMD-220)
A
Detail A
(2)
C
MM
A
Lead tip
B
A
c2
AA
A
c
M
± 0.004
B
Gau ge
0° to 8 °
plane
L3
B
L
L4
Detail “A”
Rotated 90 °CW
Scale: 8 :1
(E)
E1
V iew A - A
A1
(3)
(D1)
17.90 (0.70)
15.00 (0.625)
2.32
(0.08 )
Plating
Seating
plane
2.64 (0.103)
2.41 (0.096)
(3)
H
B
Pad layout
11.00
MIN .
(0.43)
MIN .
(4)
b 1, b 3
(c)
(b , b 2)
Section B - B and C - C
Scale: N one
9.65
(0.38 )
3.81
(0.15)
c1
MIN .
MIN .
Base
Metal
(4)
SYMBOL
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 - 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
(2)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
Dimension b1 and c1 apply to base metal only
(5)
Datum A and B to be determined at datum plane H
(6)
Controlling dimension: inch
(7)
Outline conforms to JEDEC outline TO-263AB
Document Number: 95046 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 05-Dec-08 For technical questions concerning module products, contact: ind-modules@vishay.com
1
D2PAK
Part Marking Information
Vishay High Power Products
Assemb ly
lot code
xxxxxxS
V PYWWXA
802 4
Part nu mb er
Produ ct v ersion (optional):
P = Lead (Pb )-free
N one = Standard
Date code:
Year 0 = 2000
Week 02
Line X
Child lot A
Example: This is a xxxxxxS with
assembly lot code 8024,
assembled on WW 02, 2000
Document Number: 95054 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
Revision: 17-Oct-08 For technical questions concerning module products, contact: ind-modules@vishay.com
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1
D2PAK
TAPE AND REEL INFORMATION in millimeters (inches)
P
2
Ø 1.55 ± 0.05
Ø 1.6 ± 0.1
R 0.3
TYP.
2.0 ± 0.1
Y
See note (5)
C
2.17 ± 0.1
P
0
4.0 ± 0.1
See note (1)
Packaging Information
Vishay High Power Products
C
1.75 ± 0.1
C
F
11.50 ± 0.1
1.57 ± 0.1
See note (5)
C
W
24.00 ± 0.3
Y
P
1
16.00 ± 0.1
0.35 ± 0.05
0.12 MAX.
C
1.20
L
4.90 ± 0.1
Section Y - Y
K
0
A
0
10.50 ± 0.1
2
B
10.25 ± 0.1
C
C
0
B
15.80 ± 0.1
C
Notes
(1)
10 sprocket hole pitch cumulative tolerance ± 0.02
(2)
Camber not to exceed 1 mm in 100 mm
(3)
Material: conductive black styrenic alloy
(4)
K0 measured from a plane on the inside bottom of the pocket to the top surface of the carrier
(5)
Measured from centerline of sprocket hole to centerline of pocket
(6)
Vendor: (optional)
(7)
Must also meet requirements of EIA standard # EIA-481A taping of surface mount components for automatic placement
(8)
Surface resistivity of molded material must measure less or equal to 106 Ω per square. Measured in accordance to procedure given in
ASTM D-257 and ASTM D-991
(9)
Total length per reel must be 45 m
(10)
critical
C
Document Number: 95032 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
Revision: 17-Apr-08 For technical questions concerning module products, contact: ind-modules@vishay.com
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1