Vishay 10TTS08SPbF Data Sheet

D2PAK

PRODUCT SUMMARY

VT at 6.5 A < 1.15 V

I

TSM

V

RRM

10TTS08SPbF High Voltage Series

Surface Mountable

Phase Control SCR, 10 A

DESCRIPTION/FEATURES

The 10TTS08SPbF High Voltage Series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology
used has reliable operation up to 125 °C junction
temperature.

Typical applications are in input rectification (soft start) and
these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines.

This product has been designed and qualified for industrial
level and lead (Pb)-free.

(A)

1 (K)

2

(G) 3

140 A

800 V

Vishay High Power Products

RoHS

COMPLIANT

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS

NEMA FR-4 or G-10 glass fabric-based epoxy
with 4 oz. (140 µm) copper

Aluminum IMS, R

Aluminum IMS with heatsink, R

Note

•T

= 55 °C, TJ = 125 °C, footprint 300 mm

A

= 15 °C/W 6.3 9.5

thCA

= 5 °C/W 14.0 18.5

thCA

2

2.5 3.5

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

RMS

V

RRM/VDRM

I

TSM

V

T

dV/dt 150 V/µs

dI/dt 100 A/µs

T

J

Sinusoidal waveform 6.5

10

800 V

140 A

6.5 A, TJ = 25 °C 1.15 V

Range - 40 to 125 °C

A

A

VOLTAGE RATINGS

, MAXIMUM

V

RRM

PART NUMBER

10TTS08SPbF 800 800 1.0

Document Number: 94562 For technical questions, contact: [e-mail]
Revision: 24-Apr-08 1

PEAK REVERSE VOLTAGE

V

V

, MAXIMUM PEAK

DRM

DIRECT VOLTAGE

V

I

RRM/IDRM

AT 125 °C

mA

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10TTS08SPbF High Voltage Series

Vishay High Power Products

Surface Mountable

Phase Control SCR, 10 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current I

Maximum RMS on-state current I

Maximum peak, one-cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied, TJ = 125 °C 1000 A2√s

Maximum on-state voltage drop V

On-state slope resistance r

Threshold voltage V

Maximum reverse and direct leakage current I

Typical holding current I

Maximum latching current I

Maximum rate of rise of off-state voltage dV/dt T

T(AV)

T(RMS)

I

TSM

TM

t

T(TO)

RM/IDM

H

L

TC = 112 °C, 180° conduction half sine wave

10

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied, T

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied, T

applied, TJ = 125 °C 120

RRM

= 125 °C 140

J

applied, TJ = 125 °C 72

RRM

= 125 °C 100

J

6.5 A, TJ = 25 °C 1.15 V

TJ = 125 °C

TJ = 25 °C

= 125 °C 1.0

T

J

V

= Rated V

R

RRM/VDRM

Anode supply = 6 V, resistive load, initial IT = 1 A 30

Anode supply = 6 V, resistive load 50

= 25 °C 150 V/µs

J

Maximum rate of rise of turned-on current dI/dt 100 A/µs

6.5

17.3 mΩ

0.85 V

0.05

A

A

mA

2

s

TRIGGERING

PARAMETER SYMBOL

P

+I

-V

P

GM

G(AV)

GM

GT

V

GT

V

GD

I

GD

GM

Maximum peak gate power

Maximum average gate power

Maximum peak positive gate current

Maximum peak negative gate voltage

Maximum required DC gate current to trigger I

Maximum required DC gate
voltage to trigger

Maximum DC gate voltage not to trigger

Maximum DC gate current not to trigger

Anode supply = 6 V, resistive load, TJ = - 65 °C

Anode supply = 6 V, resistive load, T

Anode supply = 6 V, resistive load, TJ = - 65 °C 1.2

Anode supply = 6 V, resistive load, T

Anode supply = 6 V, resistive load, T

TJ = 125 °C, V

TEST CONDITIONS

= Rated value

DRM

VALUES UNITS

= 25 °C 15

J

= 125 °C 10

J

= 25 °C 1

J

= 125 °C 0.7

J

8.0

2.0

W

1.5 A

10 V

20

mAAnode supply = 6 V, resistive load, T

V

0.2

0.1 mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Typical turn-on time t

Typical turn-off time t

gt

rr

q

TJ = 25 °C 0.8

TJ = 125 °C

3

100

µsTypical reverse recovery time t

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94562

2 Revision: 24-Apr-08

10TTS08SPbF High Voltage Series

Surface Mountable

Vishay High Power Products

Phase Control SCR, 10 A

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Soldering temperature T

Maximum thermal resistance,
junction to case

Typical thermal resistance,
junction to ambient (PCB mount)

Approximate weight

Marking device Case style D

Note

(1)

When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994

T

, T

J

Stg

S

R

thJC

(1)

R

thJA

For 10 s (1.6 mm from case) 240

DC operation 1.5

2

PAK (SMD-220) 10TTS08S

- 40 to 125

40

2g

0.07 oz.

°C

°C/W

Document Number: 94562 For technical questions, contact: [e-mail]
Revision: 24-Apr-08 3

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