Vishay 10TTS08SPbF Data Sheet

10TTS08SPbF High Voltage Series

Vishay High Power Products

Surface Mountable

Phase Control SCR, 10 A

2

(A)

D2PAK		1 (K) (G) 3
PRODUCT SUMMARY
VT at 6.5 A		< 1.15 V
ITSM		140 A
VRRM		800 V

DESCRIPTION/FEATURES

The 10TTS08SPbF High Voltage Series of silicon controlled rectifiers are specifically designed for

medium power switching and phase control RoHS applications. The glass passivation technology COMPLIANT used has reliable operation up to 125 °C junction temperature.

Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines.

This product has been designed and qualified for industrial level and lead (Pb)-free.

OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS				SINGLE-PHASE BRIDGE				THREE-PHASE BRIDGE		UNITS
NEMA FR-4 or G-10 glass fabric-based epoxy					2.5			3.5
with 4 oz. (140 µm) copper
										A
Aluminum IMS, RthCA = 15 °C/W					6.3			9.5
Aluminum IMS with heatsink, RthCA = 5 °C/W					14.0			18.5
Note
• T	A	= 55 °C, T = 125 °C, footprint 300 mm2
		J
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER			TEST CONDITIONS					VALUES		UNITS
IT(AV)			Sinusoidal waveform				6.5			A
IRMS							10
VRRM/VDRM							800			V
ITSM							140			A
VT			6.5 A, TJ = 25 °C				1.15			V
dV/dt							150			V/µs
dI/dt							100			A/µs
TJ			Range					- 40 to 125		°C
VOLTAGE RATINGS
			VRRM, MAXIMUM				VDRM, MAXIMUM PEAK			IRRM/IDRM
PART NUMBER			PEAK REVERSE VOLTAGE				DIRECT VOLTAGE			AT 125 °C
				V				V		mA
10TTS08SPbF			800				800			1.0

Document Number: 94562	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 24-Apr-08		1

10TTS08SPbF High Voltage Series

Vishay High Power Products		Surface Mountable
		Phase Control SCR, 10 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER	SYMBOL		TEST CONDITIONS		VALUES	UNITS
Maximum average on-state current		IT(AV)	TC = 112 °C, 180° conduction half sine wave		6.5
Maximum RMS on-state current		IT(RMS)			10	A
Maximum peak, one-cycle,		ITSM	10 ms sine pulse, rated VRRM applied, TJ = 125 °C		120
non-repetitive surge current			10 ms sine pulse, no voltage reapplied, TJ = 125 °C		140
Maximum I2t for fusing		I2t	10 ms sine pulse, rated VRRM applied, TJ = 125 °C		72	A2s
			10 ms sine pulse, no voltage reapplied, TJ = 125 °C		100
Maximum I2√t for fusing		I2√t	t = 0.1 to 10 ms, no voltage reapplied, TJ = 125 °C		1000	A2√s
Maximum on-state voltage drop		VTM	6.5 A, TJ = 25 °C		1.15	V
On-state slope resistance		rt	TJ = 125 °C		17.3	mΩ
Threshold voltage		VT(TO)			0.85	V
Maximum reverse and direct leakage current		IRM/IDM	TJ = 25 °C	VR = Rated VRRM/VDRM	0.05
			TJ = 125 °C		1.0	mA
Typical holding current		IH	Anode supply = 6 V, resistive load, initial IT = 1 A		30
Maximum latching current		IL	Anode supply = 6 V, resistive load		50
Maximum rate of rise of off-state voltage		dV/dt	TJ = 25 °C		150	V/µs
Maximum rate of rise of turned-on current		dI/dt			100	A/µs
TRIGGERING
PARAMETER	SYMBOL		TEST CONDITIONS		VALUES	UNITS
Maximum peak gate power		PGM			8.0	W
Maximum average gate power		PG(AV)			2.0
Maximum peak positive gate current		+IGM			1.5	A
Maximum peak negative gate voltage		-VGM			10	V
			Anode supply = 6 V, resistive load, TJ = - 65 °C		20
Maximum required DC gate current to trigger		IGT	Anode supply = 6 V, resistive load, TJ = 25 °C		15	mA
			Anode supply = 6 V, resistive load, TJ = 125 °C		10
Maximum required DC gate			Anode supply = 6 V, resistive load, TJ = - 65 °C		1.2
		VGT	Anode supply = 6 V, resistive load, TJ = 25 °C		1
voltage to trigger						V
			Anode supply = 6 V, resistive load, TJ = 125 °C		0.7
Maximum DC gate voltage not to trigger		VGD	TJ = 125 °C, VDRM = Rated value		0.2
Maximum DC gate current not to trigger		IGD			0.1	mA
SWITCHING
PARAMETER	SYMBOL		TEST CONDITIONS		VALUES	UNITS
Typical turn-on time		tgt	TJ = 25 °C		0.8
Typical reverse recovery time		trr	TJ = 125 °C		3	µs
Typical turn-off time		tq			100

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 94562
2		Revision: 24-Apr-08

10TTS08SPbF High Voltage Series

	Surface Mountable		Vishay High Power Products
	Phase Control SCR, 10 A
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER	SYMBOL	TEST CONDITIONS		VALUES	UNITS
Maximum junction and storage	TJ, TStg			- 40 to 125
temperature range					°C
Soldering temperature	TS	For 10 s (1.6 mm from case)		240
Maximum thermal resistance,	RthJC	DC operation		1.5
junction to case
					°C/W
Typical thermal resistance,	RthJA (1)			40
junction to ambient (PCB mount)
Approximate weight				2	g
				0.07	oz.
Marking device		Case style D2PAK (SMD-220)		10TTS08S

Note

(1)When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994

Document Number: 94562	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 24-Apr-08		3