Vishay 10TTS08S Data Sheet
Preliminary Data Sheet I2145 12/97
SAFEIR Series
10TTS08S
SURFACE MOUNTABLE PHASE CONTROL SCR
Description/Features
The 10TTS08S SAFEIR series of silicon controlled rectifiers are specifically designed for
medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125° C junction temperature.
Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines.
Output Current in Typical Applications
VT |
< 1.15V @ 6.5A |
ITSM |
= 140A |
VRRM |
= 800V |
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Single-phase Bridge |
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Three-phase Bridge |
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NEMA FR-4 or G10 glass fabric-based epoxy |
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2.5 |
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3.5 |
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with 4 oz (140µm) copper |
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Aluminum IMS, RthCA = 15°C/W |
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6.3 |
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9.5 |
A |
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Aluminum IMS with heatsink, RthCA = 5°C/W |
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14.0 |
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18.5 |
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TA = 55°C, T J = 125°C, footprint 300mm 2 |
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Major Ratings and Characteristics |
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Package Outline |
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Characteristics |
10TTS08S |
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IT(AV) |
Sinusoidal |
6.5 |
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A |
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waveform |
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IRMS |
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10 |
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A |
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VRRM/ VDRM |
800 |
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V |
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ITSM |
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140 |
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A |
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VT |
@ 6.5 A, TJ = 25°C |
1.15 |
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V |
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dv/dt |
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150 |
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V/µs |
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di/dt |
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100 |
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A/µs |
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D2 PAK (SMD-220) |
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TJ |
range |
- 40 to 125 |
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°C |
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1
10TTS08S SAFEIR Series
Preliminary Data Sheet I2145 12/97
Voltage Ratings
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VRRM, maximum |
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VDRM, maximum |
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IRRM/IDRM |
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Part Number |
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peak reverse voltage |
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peak direct voltage |
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125°C |
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V |
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V |
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mA |
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10TTS08S |
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800 |
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800 |
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1.0 |
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Absolute Maximum Ratings |
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Parameters |
10TTS08S |
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Units |
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Conditions |
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IT(AV) |
Max.AverageOn-stateCurrent |
6.5 |
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A |
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@TC=112°C,180°conductionhalfsinewave |
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IT(RMS) Max.RMSOn-stateCurrent |
10 |
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ITSM |
Max.PeakOneCycleNon-Repetitive |
120 |
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10msSinepulse,ratedVRRMapplied,TJ=125°C |
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SurgeCurrent |
140 |
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10msSinepulse,novoltagereapplied,TJ = 125°C |
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I2t Max. I2t for fusing |
72 |
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A2s |
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10msSinepulse,ratedV applied,T =125°C |
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RRM |
J |
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100 |
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10msSinepulse,novoltagereapplied,TJ=125°C |
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I2Öt Max. I2Öt for fusing |
1000 |
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A2Ös |
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t = 0.1 to 10ms, no voltage reapplied,T = 125°C |
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J |
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VTM |
Max.On-stateVoltageDrop |
1.15 |
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@6.5A, TJ = 25°C |
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rt |
On-state slope resistance |
17.3 |
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mW |
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TJ = |
125°C |
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VT(TO) |
Threshold Voltage |
0.85 |
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V |
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IRM/IDM Max.Reverse and Direct |
0.05 |
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mA |
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TJ = |
25 °C |
VR = rated VRRM/ VDRM |
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Leakage Current |
1.0 |
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TJ = 125 °C |
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IH |
Typ. Holding Current |
30 |
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mA |
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Anode Supply = 6V, Resistive load, Initial IT=1A |
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IL |
Max. Latching Current |
50 |
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mA |
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Anode Supply = 6V, Resistive load |
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dv/dt |
Max. rate of rise of off-state Voltage |
150 |
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V/µs |
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TJ = |
25°C |
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di/dt |
Max. rate of rise ofturned-onCurrent |
100 |
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A/µs |
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2
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10TTS08S SAFEIR Series |
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Preliminary Data Sheet I2145 12/97 |
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Triggering |
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Parameters |
10TTS08S |
Units |
Conditions |
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PGM |
Max. peak Gate Power |
8.0 |
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PG(AV) Max. average Gate Power |
2.0 |
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+ IGM Max. paek positive Gate Current |
1.5 |
A |
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- VGM Max. paek negative Gate Voltage |
10 |
V |
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IGT |
Max. required DC Gate Current |
20 |
mA |
Anode supply = 6V, resistive load, TJ = - 65°C |
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to trigger |
15 |
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Anode supply = 6V, resistive load, TJ = 25°C |
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10 |
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Anode supply = 6V, resistive load, TJ = 125°C |
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VGT |
Max. required DC Gate Voltage |
1.2 |
V |
Anode supply = 6V, resistive load, TJ = - 65°C |
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to trigger |
1 |
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Anode supply = 6V, resistive load, TJ = 25°C |
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0.7 |
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Anode supply = 6V, resistive load, TJ = 125°C |
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VGD |
Max. DC Gate Voltage not to trigger |
0.2 |
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TJ = 125°C, V DRM = rated value |
IGD |
Max. DC Gate Current not to trigger |
0.1 |
mA |
TJ = 125°C, V DRM = rated value |
Switching |
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Parameters |
10TTS08S |
Units |
Conditions |
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tgt |
Typical turn-on time |
0.8 |
µs |
TJ = 25°C |
trr |
Typical reverse recovery time |
3 |
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TJ = 125°C |
tq |
Typical turn-off time |
100 |
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Thermal-Mechanical Specifications |
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Parameters |
10TTS08S |
Units |
Conditions |
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TJ |
Max.JunctionTemperatureRange |
-40to125 |
°C |
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Tstg |
Max.StorageTemperatureRange |
-40to125 |
°C |
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SolderingTemperature |
240 |
°C |
for10seconds(1.6mmfromcase) |
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RthJC |
Max.ThermalResistanceJunction |
1.5 |
°C/W |
DC operation |
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toCase |
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RthJA |
Typ.ThermalResistanceJunction |
40 |
°C/W |
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toAmbient(PCBMount)** |
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wt |
ApproximateWeight |
2(0.07) |
g(oz.) |
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CaseStyle |
D2Pak(SMD-220) |
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**Whenmountedon1"square(650mm2)PCBofFR-4orG-10material4oz(140µm)copper40°C/W Forrecommendedfootprintandsolderingtechniquesrefertoapplicationnote#AN-994
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