Vishay 10TTS08PbF Data Sheet

TO-220AB
PRODUCT SUMMARY
VT at 6.5 A < 1.15 V
I
TSM
V
RRM
10TTS08PbF High Voltage Series
Phase Control SCR, 10 A
(A)
1 (K)
2
(G) 3
140 A
800 V
The 10TTS08PbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature.
Typical applications are in input rectification and crow-bar (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines.
Also available in SMD-220 package (series 10TTS08SPbF).
This product has been designed and qualified for industrial level and lead (Pb)-free (“PbF” suffix).
Vishay High Power Products
Available
RoHS*
COMPLIANT
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter T common heatsink of 1 °C/W
= 55 °C, TJ = 125 °C,
A
13.5 17 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
V
RRM/VDRM
I
TSM
V
T
dV/dt 150 V/µs
dI/dt 100 A/µs
T
J
Sinusoidal waveform 6.5
10
800 V
140 A
6.5 A, TJ = 25 °C 1.15 V
Range - 40 to 125 °C
A
VOLTAGE RATINGS
, MAXIMUM
V
RRM
PART NUMBER
10TTS08PbF 800 800 1.0
PEAK REVERSE VOLTAGE
V
V
, MAXIMUM PEAK
DRM
DIRECT VOLTAGE
V
I
RRM/IDRM
AT 125 °C
mA
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94572 For technical questions, contact: diodes-tech@vishay.com Revision: 26-May-08 1
www.vishay.com
10TTS08PbF High Voltage Series
Vishay High Power Products
Phase Control SCR, 10 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current I
Maximum RMS on-state current I
Maximum peak, one-cycle, non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied, TJ = 125 °C 1000 A2√s
Maximum on-state voltage drop V
On-state slope resistance r
Threshold voltage V
Maximum reverse and direct leakage current I
Typical holding current I
Maximum latching current I
Maximum rate of rise of off-state voltage dV/dt T
T(AV)
T(RMS)
I
TSM
TM
t
T(TO)
RM/IDM
H
L
TC = 112 °C, 180° conduction half sine wave
10
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied, T
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied, T
applied, TJ = 125 °C 120
RRM
= 125 °C 140
J
applied, TJ = 125 °C 72
RRM
= 125 °C 100
J
6.5 A, TJ = 25 °C 1.15 V
TJ = 125 °C
TJ = 25 °C
= 125 °C 1.0
T
J
V
= Rated V
R
RRM/VDRM
Anode supply = 6 V, resistive load, initial IT = 1 A 30
Anode supply = 6 V, resistive load 50
= 25 °C 150 V/µs
J
Maximum rate of rise of turned-on current dI/dt 100 A/µs
6.5
17.3 mΩ
0.85 V
0.05
A
A
mA
2
s
TRIGGERING
PARAMETER SYMBOL
P
+I
-V
P
GM
G(AV)
GM
GM
GT
V
GT
V
GD
I
GD
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum required DC gate current to trigger I
Maximum required DC gate voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
Anode supply = 6 V, resistive load, TJ = - 65 °C
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, TJ = - 65 °C 1.2
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
TJ = 125 °C, V
TEST CONDITIONS
= Rated value
DRM
VALUES UNITS
= 25 °C 15
J
= 125 °C 10
J
= 25 °C 1
J
= 125 °C 0.7
J
8.0
2.0
W
1.5 A
10 V
20
mAAnode supply = 6 V, resistive load, T
V
0.2
0.1 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time t
Typical turn-off time t
gt
rr
q
TJ = 25 °C 0.8
TJ = 125 °C
3
100
µsTypical reverse recovery time t
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94572
2 Revision: 26-May-08
10TTS08PbF High Voltage Series
Phase Control SCR, 10 A
Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, junction to ambient
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-220AB 10TTS08
125
120
115
110
105
Maximum Allowable Case Temperature (°C)
01234567
Average On-state Current (A)
10TTS08 R (DC) = 1.5 K/ W
thJC
Conduc tion Angle
30°
60°
90°
120°
180°
T
, T
J
Stg
R
thJC
R
thJA
R
thCS
DC operation 1.5
Mounting surface, smooth and greased 0.5
- 40 to 125 °C
62
°C/W
2g
0.07 oz.
kgf · cm (lbf · in)
8
7
6
5
4
3
2
1
0
Maximum Avera ge On-stat e Pow er Loss (W)
01234567
180° 120°
90° 60° 30°
RM S Lim i t
Conduction Angle
10TTS08 T = 12 5° C
J
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
125
120
115
110
105
Maximum Allowable Case Temperature (°C)
024681012
10TTS08 R ( DC) = 1.5 K/W
thJC
Conduction Period
30°
60°
90°
120°
180°
DC
Average On-state Current (A)
Fig. 2 - Current Rating Characteristic
Fig. 3 - On-State Power Loss Characteristics
12
DC
180°
10
120°
90° 60°
8
30°
6
RM S Lim i t
4
2
0
Maximum Average On-state Power Loss (W)
024681012
Average On-state Current (A)
Conduc tion Period
10TTS08 T = 125°C
J
Fig. 4 - On-State Power Loss Characteristics
Document Number: 94572 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 26-May-08 3
10TTS08PbF High Voltage Series
Vishay High Power Products
130
At Any Rated Load Condition And With
Ra ted V Applied Following Surge.
10TTS08
RRM
Init ia l T = 125°C
J
@ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
120
110
100
90
80
70
Pe ak Ha lf Sine Wave On-state Current (A)
60
110100
Numb er Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Phase Control SCR, 10 A
1000
10TTS08
100
150
Maximum Non Repetitive Surge Current
140
130
120
110
100
90
80
ine Wa ve On-sta t e Current (A)
70
60
Pe a k Ha lf S
50
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
10TTS08
0.01 0.1 1
Pulse Train Duration (s)
Initi a l T = 125° C
No Voltage Reapplied Ra t e d V Re a p p li e d
RRM
J
T = 25 °C
10
Insta nta neous On-state Current (A)
1
0.5 1 1.5 2 2.5 3 3. 5
Insta ntaneous On-state Voltage (V)
J
T = 12 5° C
J
Fig. 7 - On-State Voltage Drop Characteristics
10
Stea dy State Value
thJC
1
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
0.1
Si n g l e Pu l s e
Transient Thermal Impedance Z (°C/W)
0.01
0.0001 0.001 0.01 0. 1 1
Squ a re Wave Pulse Dura tio n ( s)
Fig. 8 - Thermal Impedance Z
Characteristics
thJC
(DC Operation)
10TTS08
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94572
4 Revision: 26-May-08
10TTS08PbF High Voltage Series
ORDERING INFORMATION TABLE
Device code
10 T T S 08 PbF
1 - Current rating
2
3
4 - Type of silicon:
5 - Voltage code x 100 = V
6
Phase Control SCR, 10 A
513246
- Circuit configuration:
T = Single thyristor
- Package:
T = TO-220AB
S = Converter grade
RRM
-
None = Standard production
PbF = Lead (Pb)-free
Vishay High Power Products
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95222
Part marking information http://www.vishay.com/doc?95225
Document Number: 94572 For technical questions, contact: diodes-tech@vishay.com Revision: 26-May-08 5
www.vishay.com
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1
DIMENSIONS in millimeters and inches
Outline Dimensions
Vishay High Power Products
TO-220AB
A
Ø P
E
Q
D
D1
3241
(3)
CC
e1
b, b2
c
b1, b3
Section C - C and D - D
Detail B
(2)
L1
DD
L
2 x e
MM
0.015 ABC
c1
C
H1
C
Lead assignments
HEXFET
1. - Gate
2. - Drain
3. - Source
IGBTs, CoPAK
1. - Gate
2. - Collector
3. - Emitter
B
A
Seating plane
A1
A2
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
A
A
Sheet 2
3 x b2 3 x b
E
H1
θ
View A - A
123
C
C
Detail B
D
Thermal pad
D2
E1
D
L1
SYMBOL
MILLIMETERS INCHES MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
A 3.56 4.82 0.140 0.190 D1 8.38 9.02 0.330 0.355 A1 0.51 1.40 0.020 0.055 D2 12.19 12.88 0.480 0.507 A2 2.04 2.92 0.080 0.115 E 9.66 10.66 0.380 0.420 3
b 0.38 1.01 0.015 0.040 E1 8.38 8.89 0.330 0.350 b1 0.38 0.96 0.015 0.038 4 e 2.54 BSC 0.100 BSC b2 1.15 1.77 0.045 0.070 H1 5.85 6.86 0.230 0.270 b3 1.15 1.73 0.045 0.068 L 12.70 14.73 0.500 0.580
c 0.36 0.61 0.014 0.024 L1 - 6.35 - 0.250 2 c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147 c2 0.31 1.14 0.012 0.045 Q 2.54 3.05 0.100 0.120
D 14.22 15.87 0.560 0.625 3 θ 90° to 93° 90° to 93°
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5M-1994
(2)
Lead dimension and finish uncontrolled in L1
(3)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
Dimension b1 and c1 apply to base metal only
(5)
Controlling dimensions: inches
Document Number: 95222 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 11-Mar-08 For technical questions concerning module products, contact: ind-modules@vishay.com
1
Assembly lot code
xxxxxxxx
V P119X
AC
TO-220AB
Part number
Product version (optional): P = Lead (Pb)-free None = Standard Date code: Year 1 = 2001 Week 19 Line X
Part Marking Information
Vishay High Power Products
Example: This is a xxxxxxxx with assembly lot code AC, assembled on WW 19, 2001 in the assembly line “X”
Document Number: 95225 For technical questions concerning discrete products, contact: diodes-tech@vishay.com Revision: 30-Oct-08 For technical questions concerning module products, contact: ind-modules@vishay.com
www.vishay.com
1
Loading...