Vishay 10TTS08PbF Data Sheet

TO-220AB

PRODUCT SUMMARY

VT at 6.5 A < 1.15 V

I

TSM

V

RRM

10TTS08PbF High Voltage Series

Phase Control SCR, 10 A

DESCRIPTION/FEATURES

(A)

1 (K)

2

(G) 3

140 A

800 V

The 10TTS08PbF High Voltage Series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology
used has reliable operation up to 125 °C junction
temperature.

Typical applications are in input rectification and crow-bar
(soft start) and these products are designed to be used with
Vishay HPP input diodes, switches and output rectifiers
which are available in identical package outlines.

Also available in SMD-220 package (series 10TTS08SPbF).

This product has been designed and qualified for industrial
level and lead (Pb)-free (“PbF” suffix).

Vishay High Power Products

Available

RoHS*

COMPLIANT

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS

Capacitive input filter T
common heatsink of 1 °C/W

= 55 °C, TJ = 125 °C,

A

13.5 17 A

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

V

RRM/VDRM

I

TSM

V

T

dV/dt 150 V/µs

dI/dt 100 A/µs

T

J

Sinusoidal waveform 6.5

10

800 V

140 A

6.5 A, TJ = 25 °C 1.15 V

Range - 40 to 125 °C

A

VOLTAGE RATINGS

, MAXIMUM

V

RRM

PART NUMBER

10TTS08PbF 800 800 1.0

PEAK REVERSE VOLTAGE

V

V

, MAXIMUM PEAK

DRM

DIRECT VOLTAGE

V

I

RRM/IDRM

AT 125 °C

mA

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94572 For technical questions, contact: [e-mail]
Revision: 26-May-08 1

www.vishay.com

10TTS08PbF High Voltage Series

Vishay High Power Products

Phase Control SCR, 10 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current I

Maximum RMS on-state current I

Maximum peak, one-cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied, TJ = 125 °C 1000 A2√s

Maximum on-state voltage drop V

On-state slope resistance r

Threshold voltage V

Maximum reverse and direct leakage current I

Typical holding current I

Maximum latching current I

Maximum rate of rise of off-state voltage dV/dt T

T(AV)

T(RMS)

I

TSM

TM

t

T(TO)

RM/IDM

H

L

TC = 112 °C, 180° conduction half sine wave

10

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied, T

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied, T

applied, TJ = 125 °C 120

RRM

= 125 °C 140

J

applied, TJ = 125 °C 72

RRM

= 125 °C 100

J

6.5 A, TJ = 25 °C 1.15 V

TJ = 125 °C

TJ = 25 °C

= 125 °C 1.0

T

J

V

= Rated V

R

RRM/VDRM

Anode supply = 6 V, resistive load, initial IT = 1 A 30

Anode supply = 6 V, resistive load 50

= 25 °C 150 V/µs

J

Maximum rate of rise of turned-on current dI/dt 100 A/µs

6.5

17.3 mΩ

0.85 V

0.05

A

A

mA

2

s

TRIGGERING

PARAMETER SYMBOL

P

+I

-V

P

GM

G(AV)

GM

GM

GT

V

GT

V

GD

I

GD

Maximum peak gate power

Maximum average gate power

Maximum peak positive gate current

Maximum peak negative gate voltage

Maximum required DC gate current to trigger I

Maximum required DC gate
voltage to trigger

Maximum DC gate voltage not to trigger

Maximum DC gate current not to trigger

Anode supply = 6 V, resistive load, TJ = - 65 °C

Anode supply = 6 V, resistive load, T

Anode supply = 6 V, resistive load, TJ = - 65 °C 1.2

Anode supply = 6 V, resistive load, T

Anode supply = 6 V, resistive load, T

TJ = 125 °C, V

TEST CONDITIONS

= Rated value

DRM

VALUES UNITS

= 25 °C 15

J

= 125 °C 10

J

= 25 °C 1

J

= 125 °C 0.7

J

8.0

2.0

W

1.5 A

10 V

20

mAAnode supply = 6 V, resistive load, T

V

0.2

0.1 mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Typical turn-on time t

Typical turn-off time t

gt

rr

q

TJ = 25 °C 0.8

TJ = 125 °C

3

100

µsTypical reverse recovery time t

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94572

2 Revision: 26-May-08

10TTS08PbF High Voltage Series

Phase Control SCR, 10 A

Vishay High Power Products

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

minimum 6 (5)

maximum 12 (10)

Marking device Case style TO-220AB 10TTS08

125

120

115

110

105

Maximum Allowable Case Temperature (°C)

01234567

Average On-state Current (A)

10TTS08
R (DC) = 1.5 K/ W

thJC

Conduc tion Angle

30°

60°

90°

120°

180°

T

, T

J

Stg

R

thJC

R

thJA

R

thCS

DC operation 1.5

Mounting surface, smooth and greased 0.5

- 40 to 125 °C

62

°C/W

2g

0.07 oz.

kgf · cm
(lbf · in)

8

7

6

5

4

3

2

1

0

Maximum Avera ge On-stat e Pow er Loss (W)

01234567

180°
120°

90°
60°
30°

RM S Lim i t

Conduction Angle

10TTS08
T = 12 5° C

J

Average On-state Current (A)

Fig. 1 - Current Rating Characteristics

125

120

115

110

105

Maximum Allowable Case Temperature (°C)

024681012

10TTS08
R ( DC) = 1.5 K/W

thJC

Conduction Period

30°

60°

90°

120°

180°

DC

Average On-state Current (A)

Fig. 2 - Current Rating Characteristic

Fig. 3 - On-State Power Loss Characteristics

12

DC

180°

10

120°

90°
60°

8

30°

6

RM S Lim i t

4

2

0

Maximum Average On-state Power Loss (W)

024681012

Average On-state Current (A)

Conduc tion Period

10TTS08
T = 125°C

J

Fig. 4 - On-State Power Loss Characteristics

Document Number: 94572 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 26-May-08 3