Vishay 10TQ...SPbF Data Sheet
D2PA K
PRODUCT SUMMARY
I
F(AV)
V
R
N/C
Schottky Rectifier, 10 A
FEATURES
Base
cathode
1
2
3
Anode
10 A
35/45 V
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for Q101 level
DESCRIPTION
The 10TQ...SPbF Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation up
to 175 °C junction temperature. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
10TQ...SPbF
Vishay High Power Products
Available
RoHS*
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 10 A
35/45 V
tp = 5 µs sine 1050 A
10 Apk, TJ = 125 °C 0.49 V
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 10TQ035SPbF 10TQ045SPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
35 45 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy E
Repetitive avalanche current I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94121 For technical questions, contact: diodes-tech@vishay.com
Revision: 26-May-08 1
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 151 °C, rectangular waveform 10 A
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 280
TJ = 25 °C, IAS = 2 A, L = 6.5 mH 13 mJ
AS
Current decaying linearly to zero in 1 µs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated
load condition and with
rated V
RRM
applied
1050
A
2A
www.vishay.com
10TQ...SPbF
Vishay High Power Products
Schottky Rectifier, 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
10 A
Maximum forward voltage drop
See fig. 1
V
FM
20 A 0.67
(1)
10 A
20 A 0.61
Maximum reverse leakage current
See fig. 2
I
RM
Maximum junction capacitance C
Typical series inductance L
T
S
TJ = 25 °C
(1)
T
= 125 °C 15
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 900 pF
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.57
0.49
2
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style D
, T
T
J
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, smooth and greased 0.50
- 55 to 175 °C
2.0
2g
0.07 oz.
kgf · cm
(lbf · in)
2
PAK 10TQ045S
V
mA
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94121
2 Revision: 26-May-08
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