Bulletin PD-20057 01/01
10TQ...
10TQ...S
SCHOTTKY RECTIFIER 10 Amp
I
= 10Amp
F(AV)
VR = 35 to 45V
Major Ratings and Characteristics
Characteristics 10TQ Units
I
Rectangular 10 A
F(AV)
waveform
V
RRM
I
@ tp = 5 µs sine 1050 A
FSM
VF@ 10 Apk, TJ = 125°C 0.49 V
TJrange - 55 to 175 °C
35 to 45 V
10TQ...
Description/ Features
The 10TQ.. Schottky rectifier series has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175° C
junction temperature. Typical applications are in switching
power supplies, converters, free-wheeling diodes, and reverse battery protection.
175° C TJ operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Case Styles
10TQ... S
www.irf.com
TO-220
D
2
PAK
1
10TQ... Series
Bulletin PD-20057 01/01
Voltage Ratings
Part number 10TQ035 10TQ040 10TQ045
VRMax. DC Reverse Voltage (V)
V
Max. Working Peak Reverse Voltage (V)
RWM
35 40 45
Absolute Maximum Ratings
Parameters 10TQ Conditions
I
Max. Average Forward Current 10 A 50% duty cycle @ TC = 151° C, rectangular wave form
F(AV)
* See Fig. 5
I
Max. Peak One Cycle Non-Repetitive 1050 5µs Sine or 3µs Rect. pulse
FSM
Surge Current * See Fig. 7 280 10ms Sine or 6ms Rect. pulse
EASNon-Repetitive Avalanche Energy 13 mJ TJ = 25 °C, I
IARRepetitive Avalanche Current 2 A Current decaying linearly to zero in 1 µsec
Units
A
Frequency limited by T
= 2 Amps, L = 6.5 mH
AS
max. VA = 1.5 x VR typical
J
Following any rated
load condition and
with rated V
RRM
Electrical Specifications
Parameters 10TQ Conditions
VFMMax. Forward Voltage Drop (1) 0.57 V @ 10A
* See Fig. 1 0.67 V @ 20A
IRMMax. Reverse Leakage Current (1) 2 mA TJ = 25 °C
* See Fig. 2 15 mA TJ = 125 °C
CTMax. Junction Capacitance 900 pF VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C
LSTypical Series Inductance 8.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10,000 V/ µs
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
Units
0.49 V @ 10A
0.61 V @ 20A
TJ = 25 °C
TJ = 125 °C
VR = rated V
R
applied
Thermal-Mechanical Specifications
Parameters 10TQ Conditions
TJMax. Junction Temperature Range -55 to 175 °C
T
Max. Storage Temperature Range -55 to 175 °C
stg
R
Max. Thermal Resistance Junction 2.0 °C/W DC operation * See Fig. 4
thJC
to Case
R
Typical Thermal Resistance, Case to 0.50 °C/W Mounting surface , smooth and greased
thCS
Heatsink
wt Approximate Weight 2 (0.07) g (oz.)
T Mounting Torque Min. 6 (5)
Max. 12 (10)
2
Units
Kg-cm
(Ibf-in)
www.irf.com