TO-220AC
PRODUCT SUMMARY
I
F(AV)
V
R
Schottky Rectifier, 10 A
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
DESCRIPTION
The 10TQ...PbF Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
cathode
1
Cathode
Base
2
3
Anode
10 A
35/45 V
10TQ...PbF Series
Vishay High Power Products
Pb-free
Available
RoHS*
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 10 A
35/45 V
tp = 5 µs sine 1050 A
10 Apk, TJ = 125 °C 0.49 V
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 10TQ035PbF 10TQ045PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
35 45 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
Maximum peak one cycle non-repetitive
surge current
See fig. 7
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 151 °C, rectangular waveform 10
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 280
TJ = 25 °C, IAS = 2 A, L = 6.5 mH 13 mJ
AS
Current decaying linearly to zero in 1 µs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
1050
2A
A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94120 For technical questions, contact: diodes-tech@vishay.com
Revision: 05-Jun-08 1
www.vishay.com
10TQ...PbF Series
Vishay High Power Products
Schottky Rectifier, 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
10 A
Maximum forward voltage drop
See fig. 1
V
FM
20 A 0.67
(1)
10 A
20 A 0.61
Maximum reverse leakage current
See fig. 2
I
RM
Maximum junction capacitance C
Typical series inductance L
TJ = 25 °C
(1)
T
= 125 °C 15
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 900 pF
T
Measured lead to lead 5 mm from package body 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.57
0.49
2
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-220AC
T
, T
J
Stg
DC operation
R
thJC
R
thCS
See fig. 4
Mounting surface, smooth and greased 0.50
- 55 to 175 °C
2.0
2g
0.07 oz.
kgf · cm
(lbf · in)
10TQ035
10TQ045
V
mA
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94120
2 Revision: 05-Jun-08