Vishay 10MQ100NPBF Data Sheet
SMA
PRODUCT SUMMARY
I
F(AV)
V
R
Schottky Rectifier, 2.1 A
Cathode Anode
2.1 A
100 V
10MQ100NPbF
Vishay High Power Products
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The 10MQ100NPbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
DC 2.1 A
100 V
tp = 5 µs sine 120 A
1.5 Apk, TJ = 125 °C 0.68 V
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 10MQ100NPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
100 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current, T
See fig. 6
Non-repetitive avalanche energy E
Repetitive avalanche current I
= 25 °C
J
I
F(AV)
I
FSM
AR
50 % duty cycle at TL = 126 °C, rectangular waveform
On PC board 9 mm
(0.013 mm thick copper pad area)
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 30
TJ = 25 °C, IAS = 0.5 A, L = 8 mH 1.0 mJ
AS
Current decaying linearly to zero in 1 µs
Frequency limited by T
2
island
Following any rated
load condition and with
rated V
RRM
maximum VA = 1.5 x VR typical
J
applied
1.5 A
120
A
0.5 A
Document Number: 94119 For technical questions, contact: diodestech@vishay.com
Revision: 02-Jul-09 1
www.vishay.com
10MQ100NPbF
Vishay High Power Products
Schottky Rectifier, 2.1 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
1 A
Maximum forward voltage drop
See fig. 1
V
FM
1.5 A 0.85
(1)
1 A
1.5 A 0.68
Maximum reverse leakage current
See fig. 2
I
RM
Threshold voltage V
Forward slope resistance r
Typical junction capacitance C
Typical series inductance L
F(TO)
t
T
S
TJ = 25 °C
(1)
T
= 125 °C 1
J
TJ = TJ maximum
VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz 38 pF
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.78
0.63
0.1
0.52 V
78.4 mΩ
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device Case style SMA (similar D-64) V1J
Note
dP
(1)
------------dT
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------<
R
thJA
(1)
T
, T
J
Stg
R
thJA
DC operation 80 °C/W
- 55 to 150 °C
0.07 g
0.002 oz.
V
mA
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94119
2 Revision: 02-Jul-09
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