Vishay 10MQ100NPBF Data Sheet

SMA
PRODUCT SUMMARY
I
F(AV)
V
R
Schottky Rectifier, 2.1 A
Cathode Anode
2.1 A
100 V
10MQ100NPbF
Vishay High Power Products
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The 10MQ100NPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
DC 2.1 A
100 V
tp = 5 µs sine 120 A
1.5 Apk, TJ = 125 °C 0.68 V
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 10MQ100NPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
100 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current See fig. 4
Maximum peak one cycle non-repetitive surge current, T
See fig. 6
Non-repetitive avalanche energy E
Repetitive avalanche current I
= 25 °C
J
I
F(AV)
I
FSM
AR
50 % duty cycle at TL = 126 °C, rectangular waveform On PC board 9 mm (0.013 mm thick copper pad area)
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 30
TJ = 25 °C, IAS = 0.5 A, L = 8 mH 1.0 mJ
AS
Current decaying linearly to zero in 1 µs Frequency limited by T
2
island
Following any rated load condition and with rated V
RRM
maximum VA = 1.5 x VR typical
J
applied
1.5 A
120
A
0.5 A
Document Number: 94119 For technical questions, contact: diodestech@vishay.com Revision: 02-Jul-09 1
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10MQ100NPbF
Vishay High Power Products
Schottky Rectifier, 2.1 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
1 A
Maximum forward voltage drop See fig. 1
V
FM
1.5 A 0.85
(1)
1 A
1.5 A 0.68
Maximum reverse leakage current See fig. 2
I
RM
Threshold voltage V
Forward slope resistance r
Typical junction capacitance C
Typical series inductance L
F(TO)
t
T
S
TJ = 25 °C
(1)
T
= 125 °C 1
J
TJ = TJ maximum
VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz 38 pF
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.78
0.63
0.1
0.52 V
78.4 mΩ
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to ambient
Approximate weight
Marking device Case style SMA (similar D-64) V1J
Note
dP
(1)
------------­dT
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------< R
thJA
(1)
T
, T
J
Stg
R
thJA
DC operation 80 °C/W
- 55 to 150 °C
0.07 g
0.002 oz.
V
mA
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94119
2 Revision: 02-Jul-09
10MQ100NPbF
Schottky Rectifier, 2.1 A
10
T
= 150 °C
J
= 125 °C
T
1
Current (A)
- Instantaneous Forward
F
I
0.1
0.4 0.6 0.8 1.0 1.61.2
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1
0.1
0.01
0.001
0.0001
- Reverse Current (mA)
R
I
0
TJ = 25 °C
0
TJ = 75 °C
TJ = 50 °C
20 40 60
VR - Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
J
TJ = 25 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1.4
80
100
Vishay High Power Products
150
140
130
D = 0.20 D = 0.25
120
D = 0.33 D = 0.50 D = 0.75
110
Square wave (D = 0.50) 80 % rated V
100
Allowable Case Temperature (°C)
See note (1)
90
0 0.4 0.8 1.2 2.4
I
F(AV)
Fig. 4 - Maximum Average Forward Current vs.
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Average Power Loss (W)
0.2
D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75
0
0 0.4 0.8 1.2 2.0 2.4
I
F(AV)
Fig. 5 - Maximum Average Forward Dissipation vs.
applied
R
1.6 2.0
- Average Forward Current (A)
Allowable Lead Temperature
DC
1.6
- Average Forward Current (A)
Average Forward Current
DC
RMS limit
100
TJ = 25 °C
10
- Junction Capacitance (pF)
T
C
1
0
60
10040
8020
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
100
TJ = 25 °C
At any rated load condition and with rated V
- Non-Repetitive Surge Current (A)
FSM
I
following surge
10
10
RRM
100
applied
1000
tp - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
10 000
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I
F(AV)
) x R
REV
x VFM at (I
;
thJC
/D) (see fig. 6); Pd
F(AV)
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
R
Document Number: 94119 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 02-Jul-09 3
10MQ100NPbF
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
10 M Q 100 N TR PbF
1 - Current rating
2 - M = SMA
- Q = Schottky “Q” series
3
- Voltage rating (100 = 100 V)
4
5 - N = New SMA
6 -
- PbF = Lead (Pb)-free
7
Schottky Rectifier, 2.1 A
51324
None = Box (1000 pieces)
TR = Tape and reel (7500 pieces)
67
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95018
Part marking information www.vishay.com/doc?95029
Packaging information www.vishay.com/doc?95034
SPICE model www.vishay.com/doc?95371
www.vishay.com For technical questions, contact: diodestech@vishay.com 4 Revision: 02-Jul-09
Document Number: 94119
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Disclaimer

All product specifications and data are subject to change without notice.
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Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1
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