Vishay 10MQ100N Data Sheet
Bulletin PD-20520 rev. M 07/04
10MQ100N
SCHOTTKY RECTIFIER |
2.1 Amp |
IF(AV) = 2.1Amp
VR = 100V
Major Ratings and Characteristics
Characteristics |
10MQ100N |
Units |
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I F |
DC |
2.1 |
A |
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VRRM |
|
100 |
V |
IFSM |
@ tp = 5 µs sine |
120 |
A |
VF |
@1.5Apk, TJ=125°C |
0.68 |
V |
|
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|
TJ |
range |
- 55 to 150 |
°C |
Description/ Features
The 10MQ100N surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switchingpowersupplies,converters,free-wheelingdiodes,battery charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
Case Styles
10MQ100N
SMA
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1 |
10MQ100N
Bulletin PD-20520 rev. M 07/04
Voltage Ratings
Part number |
10MQ100N |
|
VR Max. DC Reverse Voltage (V) |
100 |
|
VRWM Max. Working Peak Reverse Voltage (V) |
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Absolute Maximum Ratings
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Parameters |
10MQ |
Units |
Conditions |
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IF(AV) |
Max. Average Forward Current |
1.5 |
A |
50% duty cycle @ TL = 126 °C, rectangular wave form. |
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* See Fig. 4 |
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|
OnPCboard9mm2 island(.013mmthickcopperpad area) |
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IFSM |
Max. Peak One Cycle Non-Repetitive |
120 |
A |
5µs Sine or 3µs Rect. pulse |
Following any rated |
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load condition and |
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SurgeCurrent *SeeFig.6,TJ=25°C |
30 |
|
10ms Sine or 6ms Rect. pulse |
with rated VRRM applied |
EAS |
Non-Repetitive Avalanche Energy |
1.0 |
mJ |
TJ = 25 °C, IAS = 0.5A, L = 8mH |
|
IAR |
Repetitive Avalanche Current |
0.5 |
A |
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Electrical Specifications
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Parameters |
|
10MQ |
Units |
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Conditions |
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VFM |
Max. Forward Voltage Drop |
(1) |
0.78 |
V |
@ 1A |
TJ |
= 25 °C |
|
* See Fig. 1 |
|
0.85 |
V |
@ 1.5A |
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0.63 |
V |
@ 1A |
TJ |
= 125 °C |
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0.68 |
V |
@ 1.5A |
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IRM |
Max. Reverse Leakage Current (1) |
0.1 |
mA |
TJ = 25 °C |
VR |
= rated VR |
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* See Fig. 2 |
|
1 |
mA |
TJ = 125 °C |
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VF(TO) Threshold Voltage |
|
0.52 |
V |
TJ = TJ max. |
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rt |
Forward Slope Resistance |
|
78.4 |
mΩ |
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CT |
Typical Junction Capacitance |
|
38 |
pF |
VR = 10VDC, TJ = 25°C, test signal = 1Mhz |
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LS |
Typical Series Inductance |
|
2.0 |
nH |
Measured lead to lead 5mm from package body |
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dv/dt |
Max. Voltage Rate of Change |
|
10000 |
V/µs |
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(Rated VR) |
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(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
|
Parameters |
10MQ |
Units |
Conditions |
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TJ |
Max. Junction Temperature Range (*) |
- 55 to 150 |
°C |
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Tstg |
Max. Storage Temperature Range |
- 55 to 150 |
°C |
|
RthJA |
Max. Thermal Resistance Junction |
80 |
°C/W |
DC operation |
|
to Ambient |
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wt |
Approximate Weight |
0.07(0.002) |
g (oz.) |
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Case Style |
SMA |
|
Similar D-64 |
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Device Marking |
IR1J |
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(*) dPtot |
< |
1 |
thermal runaway condition for a diode on its own heatsink |
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dTj |
Rth( j-a) |
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2 |
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