Bulletin PD-20520 rev. M 07/04
10MQ100N
SCHOTTKY RECTIFIER 2.1 Amp
I
= 2.1Amp
F(AV)
VR = 100V
Major Ratings and Characteristics
Characteristics 10MQ100N Units
I FDC 2.1 A
V
RRM
I
@ tp = 5 µs sine 120 A
FSM
VF@ 1.5Apk, TJ=125°C 0.68 V
TJrange - 55 to 150 °C
100 V
Description/ Features
The 10MQ100N surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes, battery
charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Case Styles
10MQ100N
www.irf.com
SMA
1
10MQ100N
Bulletin PD-20520 rev. M 07/04
Voltage Ratings
Part number 10MQ100N
VRMax. DC Reverse Voltage (V)
V
Max. Working Peak Reverse Voltage (V)
RWM
100
Absolute Maximum Ratings
Parameters 10MQ Units Conditions
I
Max. Average Forward Current 1.5 A 50% duty cycle @ TL = 126 °C, rectangular wave form.
F(AV)
* See Fig. 4 On PC board 9mm2 island (.013mm thick copper pad area)
I
Max. Peak One Cycle Non-Repetitive 120 5µs Sine or 3µs Rect. pulse
FSM
A
Surge Current * See Fig. 6, TJ = 25°C 30 10ms Sine or 6ms Rect. pulse
EASNon-Repetitive Avalanche Energy 1.0 mJ TJ = 25 °C, IAS = 0.5A, L = 8mH
IARRepetitive Avalanche Current 0.5 A
Following any rated
load condition and
with rated V
RRM
Electrical Specifications
Parameters 10MQ Units Conditions
VFMMax. Forward Voltage Drop (1) 0.78 V @ 1A
* See Fig. 1 0.85 V @ 1.5A
0.63 V @ 1A
0.68 V @ 1.5A
IRMMax. Reverse Leakage Current (1) 0.1 mA TJ = 25 °C
* See Fig. 2 1 mA TJ = 125 °C
V
Threshold Voltage 0.52 V TJ = TJ max.
F(TO)
rtForward Slope Resistance 78.4 mΩ
CTTypical Junction Capacitance 38 pF VR = 10VDC, TJ = 25°C, test signal = 1Mhz
LSTypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJ = 25 °C
TJ = 125 °C
VR = rated V
R
applied
Thermal-Mechanical Specifications
Parameters 10MQ Units Conditions
TJMax. Junction Temperature Range (*) - 55 to 150 °C
T
Max. Storage Temperature Range - 55 to 150 °C
stg
R
Max. Thermal Resistance Junction 80 °C/W DC operation
thJA
to Ambient
wt Approximate Weight 0.07(0.002) g (oz.)
Case Style SMA Similar D-64
Device Marking IR1J
(*) dPtot 1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
2
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10MQ100N
Bulletin PD-20520 rev. M 07/04
1
T = 150°C
J
10
0.1
R
0.01
125°C
100°C
75°C
F
T = 150°C
J
T = 125°C
J
1
Instantaneous Forward Current - I (A)
0.1
0.4 0.6 0.8 1 1.2 1.4 1.6
Fo rwa rd Volt age Drop - V (V)
T = 25°C
J
FM
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Reverse Current - I (mA)
0.0001
0.001
0
50°C
25°C
020406080100
Reverse Voltage - V (V)
R
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
100
T
10
Junction Capac itance - C (pF)
1
020406080100
T = 25°C
J
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
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3
10MQ100N
Bulletin PD-20520 rev. M 07/04
150
140
130
D = 0.20
D = 0.25
120
D = 0.33
D = 0.50
D = 0.75
110
Sq uare w av e (D = 0.50)
80% Ra ted V applied
100
Allowable Case Temperature - (°C)
se e no te ( 2)
90
0 0.4 0.8 1.2 1.6 2 2.4
R
Averag e Fo rwa rd Current - I (A)
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
100
(A)
FSM
DC
F( A V )
1.6
D = 0.20
1.4
D = 0.25
D = 0.33
1.2
D = 0.50
D = 0.75
1
0.8
RM S Li m i t
0.6
0.4
Average Power Loss - (Watts)
0.2
0
0 0.4 0.8 1.2 1.6 2 2.4
Averag e Fo rwa rd Current - I (A)
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Tj = 25˚C
DC
F( A V )
(2) Formula used: TC = TJ - (Pd + Pd
Pd = Forward Power Loss = I
Pd
= Inverse Power Loss = VR1 x IR (1 - D); IR @ V
REV
4
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
Non - Repetitive Surge Current - I
10
10 100 1000 10000
Square Wave Pulse Duration - tp (microsec)
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
) x R
thJC
;
F(AV)
/ D) (see Fig. 6);
= 80% rated V
R1
R
F(AV)
REV
x VFM @ (I
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Outline Table
Device Marking: IR1J
10MQ100N
Bulletin PD-20520 rev. M 07/04
CATHODE ANODE
1.40 (.055)
1.60 (.062)
2.00 (.078)
2.44 (.096)
0.76 (.030)
1.52 (.060)
4.00 (.157)
4.60 (.181)
4.80 (.188)
5.28 (.208)
2.50 (.098)
2.90 (.114)
.152 (.006)
.305 (.012)
.103 (.004)
.203 (.008)
Outline SMA
1 2
1.47 MIN.
SOLDERING PAD
2
2.10 MAX.
(.085 MAX. )
5.53 (.218)
POLARITY PART NUMBER
1
(.058 MIN.)
1.27 MIN.
(.050 MIN.)
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
www.irf.com
IR1J
YYWWX
VOLTAGE
CURRENT
IR LOGO
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
5
10MQ100N
Bulletin PD-20520 rev. M 07/04
Tape & Reel Information
Ordering Information Table
Dimensions in millimetres and (inches)
Device Code
10 M Q 100 N TR -
1
24
3
1 - Current Rating
2 - M = SMA
3 - Q = Schottky Q Series
4 - Voltage Rating (100 = 100V)
5 - N = New SMA
6 - y none= Box (1000 pieces)
5
y TR = Tape & Reel (7500 pieces)
7 y none = Standard Production
y PbF = Lead-Free
This product has been designed and qualified for Industrial Level.
Data and specifications subject to change without notice.
Qualification Standards can be found on IR's Web site.
7
6
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
Visit us at www.irf.com for sales contact information. 07/04
6
TAC Fax: (310) 252-7309
www.irf.com
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