Vishay 10MQ100N Data Sheet
Bulletin PD-20520 rev. M 07/04
10MQ100N
SCHOTTKY RECTIFIER 2.1 Amp
I
= 2.1Amp
F(AV)
VR = 100V
Major Ratings and Characteristics
Characteristics 10MQ100N Units
I FDC 2.1 A
V
RRM
I
@ tp = 5 µs sine 120 A
FSM
VF@ 1.5Apk, TJ=125°C 0.68 V
TJrange - 55 to 150 °C
100 V
Description/ Features
The 10MQ100N surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes, battery
charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Case Styles
10MQ100N
www.irf.com
SMA
1
10MQ100N
Bulletin PD-20520 rev. M 07/04
Voltage Ratings
Part number 10MQ100N
VRMax. DC Reverse Voltage (V)
V
Max. Working Peak Reverse Voltage (V)
RWM
100
Absolute Maximum Ratings
Parameters 10MQ Units Conditions
I
Max. Average Forward Current 1.5 A 50% duty cycle @ TL = 126 °C, rectangular wave form.
F(AV)
* See Fig. 4 On PC board 9mm2 island (.013mm thick copper pad area)
I
Max. Peak One Cycle Non-Repetitive 120 5µs Sine or 3µs Rect. pulse
FSM
A
Surge Current * See Fig. 6, TJ = 25°C 30 10ms Sine or 6ms Rect. pulse
EASNon-Repetitive Avalanche Energy 1.0 mJ TJ = 25 °C, IAS = 0.5A, L = 8mH
IARRepetitive Avalanche Current 0.5 A
Following any rated
load condition and
with rated V
RRM
Electrical Specifications
Parameters 10MQ Units Conditions
VFMMax. Forward Voltage Drop (1) 0.78 V @ 1A
* See Fig. 1 0.85 V @ 1.5A
0.63 V @ 1A
0.68 V @ 1.5A
IRMMax. Reverse Leakage Current (1) 0.1 mA TJ = 25 °C
* See Fig. 2 1 mA TJ = 125 °C
V
Threshold Voltage 0.52 V TJ = TJ max.
F(TO)
rtForward Slope Resistance 78.4 mΩ
CTTypical Junction Capacitance 38 pF VR = 10VDC, TJ = 25°C, test signal = 1Mhz
LSTypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJ = 25 °C
TJ = 125 °C
VR = rated V
R
applied
Thermal-Mechanical Specifications
Parameters 10MQ Units Conditions
TJMax. Junction Temperature Range (*) - 55 to 150 °C
T
Max. Storage Temperature Range - 55 to 150 °C
stg
R
Max. Thermal Resistance Junction 80 °C/W DC operation
thJA
to Ambient
wt Approximate Weight 0.07(0.002) g (oz.)
Case Style SMA Similar D-64
Device Marking IR1J
(*) dPtot 1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
2
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