Vishay 10MQ060N Data Sheet
Bulletin PD-20519 rev. L 07/04
10MQ060N
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics Value Units
I FDC 2.1 A
V
RRM
I
@ tp = 5 µs sine 40 A
FSM
VF@ 1.5Apk, TJ=125°C 0.63 V
TJrange - 55 to 150 °C
60 V
2.1 Amp
I
= 2.1Amp
F(AV)
VR = 60V
Description/ Features
The 10MQ060N surface mount Schottky rectifier has been
designed for applications requiring low forward drop and very
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
www.irf.com
Case Styles
10MQ060N
SMA
1
10MQ060N
Bulletin PD-20519 rev. L 07/04
Voltage Ratings
Part number 10MQ060N
VRMax. DC Reverse Voltage (V)
V
Max. Working Peak Reverse Voltage (V)
RWM
60
Absolute Maximum Ratings
Parameters 10MQ Units Conditions
I
Max. Average Forward Current 1.5 A 50% duty cycle @ TL = 120 °C, rectangular wave form.
F(AV)
* See Fig. 4 On PC board 9mm2 island(.013mm thick copper pad area)
I
Max. Peak One Cycle Non-Repetitive 40 5µs Sine or 3µs Rect. pulse
FSM
A
Surge Current * See Fig. 6 10 10ms Sine or 6ms Rect. pulse
EASNon-Repetitive Avalanche Energy 2.0 mJ TJ = 25 °C, IAS = 1A, L = 4mH
IARRepetitive Avalanche Current 1.0 A
Following any rated
load condition and
with rated V
Electrical Specifications
Parameters 10MQ Units Conditions
VFMMax. Forward Voltage Drop (1) 0.63 V @ 1A
* See Fig. 1 0.71 V @ 1.5A
0.57 V @ 1A
0.63 V @ 1.5A
IRMMax. Reverse Leakage Current (1) 0.5 m A TJ = 25 °C
* See Fig. 2 7.5 mA TJ = 125 °C
V
Threshold Voltage 0.45 V TJ = TJ max.
F(TO)
rtForward Slope Resistance 86.8 mΩ
C TTypical Junction Capacitance 31 pF VR = 10VDC, TJ = 25°C, test signal = 1Mhz
L STypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs (Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJ = 25 °C
TJ = 125 °C
VR = rated V
R
RRM
applied
Thermal-Mechanical Specifications
Parameters 10MQ Units Conditions
TJMax. Junction Temperature Range (*) -55 to 150 °C
T
Max. Storage Temperature Range - 55 to 150 °C
stg
R
Max. Thermal Resistance Junction 80 °C/W DC operation
thJA
to Ambient
wt Approximate Weight 0.07(0.002) g (oz.)
Case Style SMA Similar D-64
Device Marking IR1H
(*) dPtot 1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
2
www.irf.com
Loading...