Vishay 10MQ040NPbF Data Sheet
Document Number: 94117 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 02-Jul-09 1
Schottky Rectifier, 2.1 A
10MQ040NPbF
Vishay High Power Products
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The 10MQ040NPbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
I
F(AV)
2.1 A
V
R
40 V
SMA
Cathode Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F
DC 2.1 A
V
RRM
40 V
I
FSM
t
p
= 5 µs sine 120 A
V
F
1.5 Apk, T
J
= 125 °C 0.56 V
T
J
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 10MQ040NPbF UNITS
Maximum DC reverse voltage V
R
40 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4
I
F(AV)
50 % duty cycle at T
L
= 123 °C, rectangular waveform
On PC board 9 mm
2
island
(0.013 mm thick copper pad area)
1.5 A
Maximum peak one cycle
non-repetitive surge current
See fig. 6
I
FSM
5 µs sine or 3 µs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
120
A
10 ms sine or 6 ms rect. pulse 30
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1 A, L = 6 mH 3.0 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.0 A
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94117
2 Revision: 02-Jul-09
10MQ040NPbF
Vishay High Power Products
Schottky Rectifier, 2.1 A
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
1 A
T
J
= 25 °C
0.54
V
1.5 A 0.62
1 A
T
J
= 125 °C
0.49
1.5 A 0.56
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.5
mA
T
J
= 125 °C 26
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.36 V
Forward slope resistance r
t
104 mΩ
Typical junction capacitance C
T
V
R
= 10 V
DC
, T
J
= 25 °C, test signal = 1 MHz 38 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
T
J
(1)
, T
Stg
- 55 to 150 °C
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation 80 °C/W
Approximate weight
0.07 g
0.002 oz.
Marking device Case style SMA (similar D-64) V1F
dP
tot
dT
J
-------------
1
R
thJA
--------------<
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