Bulletin PD-20518 rev. N 07/04
10MQ040N
SCHOTTKY RECTIFIER 2.1 Amp
I
= 2.1Amp
F(AV)
VR = 40V
Major Ratings and Characteristics
Characteristics Value Units
IFDC 2.1 A
V
RRM
I
@ tp = 5 µs sine 120 A
FSM
VF@ 1.5Apk, TJ=125°C 0.56 V
TJrange - 55 to 150 °C
40 V
Description/ Features
The 10MQ040N surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes, battery
charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Case Styles
10MQ040N
www.irf.com
SMA
1
10MQ040N
Bulletin PD-20518 rev. N 07/04
Voltage Ratings
Part number 10MQ040N
VRMax. DC Reverse Voltage (V)
V
Max. Working Peak Reverse Voltage (V)
RWM
40
Absolute Maximum Ratings
Parameters 10MQ Units Conditions
I
Max. Average Forward Current 1.5 A 50% duty cycle @ TL = 123 °C, rectangular wave form.
F(AV)
* See Fig. 4 On PC board 9mm2 island(.013mm thick copper pad area)
I
Max. Peak One Cycle Non-Repetitive 120 5µs Sine or 3µs Rect. pulse
FSM
A
Surge Current * See Fig. 6 30 10ms Sine or 6ms Rect. pulse
EASNon-Repetitive Avalanche Energy 3.0 mJ TJ = 25 °C, IAS = 1A, L = 6mH
IARRepetitive Avalanche Current 1.0 A
Following any rated
load condition and
with rated V
RRM
Electrical Specifications
Parameters 10MQ Units Conditions
VFMMax. Forward Voltage Drop (1) 0.54 V @ 1A
* See Fig. 1 0.62 V @ 1.5A
0.49 V @ 1A
0.56 V @ 1.5A
IRMMax. Reverse Leakage Current (1) 0.5 mA TJ = 25 °C
* See Fig. 2 26 mA TJ = 125 °C
V
Threshold Voltage 0.36 V TJ = TJ max.
F(TO)
rtForward Slope Resistance 104 mΩ
CTTypical Junction Capacitance 38 pF VR = 10VDC, TJ = 25°C, test signal = 1Mhz
LSTypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJ = 25 °C
TJ = 125 °C
VR = rated V
R
applied
Thermal-Mechanical Specifications
Parameters 10MQ Units Conditions
TJMax. Junction Temperature Range ( *) - 5 5 to 150 °C
T
Max. Storage Temperature Range - 55 to 150 °C
stg
R
Max. Thermal Resistance Junction 80 °C/W DC operation
thJA
to Ambient
wt Approximate Weight 0.07(0.002) g (oz.)
Case Style SMA Similar D-64
Device Marking IR1F
(*) dPtot 1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
2 www.irf.com
Bulletin PD-20518 rev. N 07/04
6
100
10MQ040N
10
(A)
F
1
Instantaneous Forward Curent - I
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
10
T = 150°C
J
R
Re verse C urren t - I (m A)
0.0001
1
0.1
0.01
0.001
125°C
100°C
75°C
50°C
25°C
0 5 10 15 20 25 30 35 40
Re verse Volta ge - V (V)
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
100
T
T = 25°C
J
R
0.1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Junction Capacitance - C (pF)
10
0 5 10 15 20 25 30 35 40
Re ve rse Volta ge - V (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
R
3www.irf.com
10MQ040N
Bulletin PD-20518 rev. N 07/04
150
140
130
120
D = 0.20
D = 0.25
110
D = 0.33
D = 0.50
100
D = 0.75
90
Sq uare w ave (D = 0.50)
80% Ra te d V a p p lied
80
Allowable Case Temperature - (°C)
see note (2)
70
0 0.4 0.8 1.2 1.6 2 2.4
R
Average Forward Current - I (A)
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
100
FSM
DC
F(AV)
1.4
D = 0.20
D = 0.25
1.2
D = 0.33
D = 0.50
1
D = 0.75
RM S Li m it
0.8
DC
0.6
0.4
Average Power Loss - (Watts)
0.2
0
0 0.4 0.8 1.2 1.6 2 2.4
Average Forward Current - I (A)
F( A V )
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
At An y Ra ted Lo a d Co nditio n
And With Rated V Applied
Follo win g Su rg e
Non -Re pe t it ive Surg e Cu rren t - I (A)
10
10 100 1000 10000
Sq ua re Wa ve Pulse Dura t io n - t (m icro se c)
RRM
p
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formula used: TC = TJ - (Pd + Pd
Pd = Forward Power Loss = I
Pd
= Inverse Power Loss = VR1 x IR (1 - D); IR @ V
REV
F(AV)
) x R
REV
x VFM @ (I
thJC
;
F(AV)
/ D) (see Fig. 6);
= 80% rated V
R1
R
4 www.irf.com
Outline Table
Device Marking: IR1F
10MQ040N
Bulletin PD-20518 rev. N 07/04
CATHO DE ANODE
1.40 (.055)
1.60 (.062)
2.00 (.078)
2.44 (.096)
0.76 (.030)
1.52 (.060)
4.00 (.157)
4.60 (.181)
4.80 (.188)
5.28 (.208)
2.50 (.098)
2.90 (.114)
.152 (.006)
.305 (.012)
.103 (.004)
.203 (.008)
Outline SMA
1 2
1.47 MIN.
(.058 MIN.)
SOLDER ING PAD
2
2.10 MAX .
(.085 MAX. )
5.53 (.218)
POLARIT Y PART NU MBER
1
1.27 MIN.
(.050 MIN.)
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
IR1F
YYWWX
VOLTAGE
CURRENT
IR LOGO
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st d igit of the YEAR "standard product"
"P" = "Lead-Free"
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10MQ040N
Bulletin PD-20518 rev. N 07/04
Tape & Reel Information
Ordering Information Table
Dimensions in millimetres and (inches)
Device Code
10 M Q 040 N TR -
524
1
1 - Current Rating
2 - M = SMA
3 - Q = Schottky Q Series
4 - Voltage Rating (040 = 40V)
5 - N = New SMA
6 - y none = Box (1000 pieces)
3
y TR = Tape & Reel (7500 pieces)
7 y none= Standard Production
y PbF = Lead-Free
6
7
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10MQ040N
Bulletin PD-20518 rev. N 07/04
10MQ040N
********************************************
* This model has been developed by *
* Wizard SPICE MODEL GENERATOR (1999) *
* (International Rectifier Corporation) *
* Contain Proprietary Information *
********************************************
* SPICE Model Diode is composed by a *
* simple diode plus paralled VCG2T *
********************************************
.SUBCKT 10MQ040N ANO CAT
D1 ANO 1 DMOD (0.00472)
*Define diode model
.MODEL DMOD D(IS=1.29526323971343E-04A,N=1.14666404869581,BV=52V,
+ IBV=0.260404749526768A,RS= 0.00048144,CJO=2.04792476092255E-08,
+ VJ=1.82174923822158,XTI=2, EG=0.779470593365538)
********************************************
*Implementation of VCG2T
VX 1 2 DC 0V
R1 2 CAT TRES 1E-6
.MODEL TRES RES(R=1,TC1=-43.3354342653501)
GP1 ANO CAT VALUE={-ABS(I(VX))*(EXP((((-4.190325E-03/-43.33543)*((V(2,CAT)*1E6)/(I(VX)+1E-6)-
1))+1)*7.842581E-02*ABS(V(ANO,CAT)))-1)}
********************************************
.ENDS 10MQ040N
This product has been designed and qualified for Industrial Level.
Data and specifications subject to change without notice.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 07/04
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