Vishay 10MQ040N Data Sheet

Bulletin PD-20518 rev. N 07/04

10MQ040N

SCHOTTKY RECTIFIER

2.1 Amp

Major Ratings and Characteristics

Characteristics		Value	Units
IF	DC	2.1	A
VRRM		40	V
IFSM	@ tp = 5 µs sine	120	A
VF	@1.5Apk, TJ=125°C	0.56	V
TJ	range	- 55 to 150	°C

IF(AV) = 2.1Amp

VR = 40V

Description/ Features

The 10MQ040N surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switchingpowersupplies,converters,free-wheelingdiodes,battery charging, and reverse battery protection.

Small foot print, surface mountable

Low forward voltage drop

High frequency operation

Guard ring for enhanced ruggedness and long term reliability

Case Styles

10MQ040N

SMA

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10MQ040N

Bulletin PD-20518 rev. N 07/04

Voltage Ratings

	Part number	10MQ040N
	VR Max. DC Reverse Voltage (V)	40
	VRWM Max. Working Peak Reverse Voltage (V)

Absolute Maximum Ratings

	Parameters	10MQ	Units	Conditions
IF(AV)	Max. Average Forward Current	1.5	A	50% duty cycle @ TL = 123 °C, rectangular wave form.
	* See Fig. 4			OnPCboard9mm2 island(.013mmthickcopperpad area)
IFSM	Max. Peak One Cycle Non-Repetitive	120	A	5µs Sine or 3µs Rect. pulse	Following any rated
					load condition and
	Surge Current * See Fig. 6	30		10ms Sine or 6ms Rect. pulse	with rated VRRM applied
EAS	Non-Repetitive Avalanche Energy	3.0	mJ	TJ = 25 °C, IAS = 1A, L = 6mH
IAR	Repetitive Avalanche Current	1.0	A

Electrical Specifications

	Parameters		10MQ	Units		Conditions
VFM	Max. Forward Voltage Drop	(1)	0.54	V	@ 1A	TJ	= 25 °C
	* See Fig. 1		0.62	V	@ 1.5A
			0.49	V	@ 1A	TJ	= 125 °C
			0.56	V	@ 1.5A
IRM	Max. Reverse Leakage Current (1)		0.5	mA	TJ = 25 °C	VR	= rated VR
	* See Fig. 2		26	mA	TJ = 125 °C
VF(TO) Threshold Voltage			0.36	V	TJ = TJ max.
rt	Forward Slope Resistance		104	mΩ
CT	Typical Junction Capacitance		38	pF	VR = 10VDC, TJ = 25°C, test signal = 1Mhz
LS	Typical Series Inductance		2.0	nH	Measured lead to lead 5mm from package body
dv/dt	Max. Voltage Rate of Change		10000	V/µs
	(Rated VR)

(1) Pulse Width < 300µs, Duty Cycle < 2%

Thermal-Mechanical Specifications

	Parameters	10MQ		Units	Conditions
TJ	Max. Junction Temperature Range (*)	- 55 to 150		°C
Tstg	Max. Storage Temperature Range	- 55 to 150		°C
RthJA	Max. Thermal Resistance Junction	80		°C/W	DC operation
	to Ambient
wt	Approximate Weight	0.07(0.002)	g (oz.)
	Case Style	SMA			Similar D-64
	Device Marking	IR1F

(*) dPtot		<	1	thermal runaway condition for a diode on its own heatsink
	dTj		Rth( j-a)
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10MQ040N

Bulletin PD-20518 rev. N 07/04

	10
						Tj = 150˚C
<![if ! IE]> <![endif]>(A)						Tj = 125˚C
<![if ! IE]> <![endif]>F
<![if ! IE]> <![endif]>- I
<![if ! IE]> <![endif]>Curent						Tj =	25˚C
<![if ! IE]> <![endif]>Instantaneous Forward	1
	0.1
	0.2	0.4	0.6	0.8	1	1.2	1.4	1.6

Forward Voltage Drop - VFM (V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics

		100
	<![if ! IE]> <![endif]>(mA)	10	T J= 150°C
			125°C
	<![if ! IE]> <![endif]>R	1
	<![if ! IE]> <![endif]>I		100°C
	<![if ! IE]> <![endif]>-
	<![if ! IE]> <![endif]>Current
		0.1	75°C
			50°C
	<![if ! IE]> <![endif]>Reverse	0.01
		0.001	25°C
		0.0001

0	5	10	15	20	25	30	35	40
		Reverse Voltage - VR (V)

Fig. 2 - Typical Peak Reverse Current

Vs. Reverse Voltage

100
<![if ! IE]> <![endif]>(pF)
<![if ! IE]> <![endif]>T			T J= 25°C
<![if ! IE]> <![endif]>C
<![if ! IE]> <![endif]>Junction Capacitance -
10
0	5	10	15	20	25	30	35	40
		Reverse Voltage - VR(V)

Fig. 3 - Typical Junction Capacitance

Vs. Reverse Voltage

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