Vishay 10MQ040N Data Sheet
Bulletin PD-20518 rev. N 07/04
10MQ040N
SCHOTTKY RECTIFIER 2.1 Amp
I
= 2.1Amp
F(AV)
VR = 40V
Major Ratings and Characteristics
Characteristics Value Units
IFDC 2.1 A
V
RRM
I
@ tp = 5 µs sine 120 A
FSM
VF@ 1.5Apk, TJ=125°C 0.56 V
TJrange - 55 to 150 °C
40 V
Description/ Features
The 10MQ040N surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes, battery
charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Case Styles
10MQ040N
www.irf.com
SMA
1
10MQ040N
Bulletin PD-20518 rev. N 07/04
Voltage Ratings
Part number 10MQ040N
VRMax. DC Reverse Voltage (V)
V
Max. Working Peak Reverse Voltage (V)
RWM
40
Absolute Maximum Ratings
Parameters 10MQ Units Conditions
I
Max. Average Forward Current 1.5 A 50% duty cycle @ TL = 123 °C, rectangular wave form.
F(AV)
* See Fig. 4 On PC board 9mm2 island(.013mm thick copper pad area)
I
Max. Peak One Cycle Non-Repetitive 120 5µs Sine or 3µs Rect. pulse
FSM
A
Surge Current * See Fig. 6 30 10ms Sine or 6ms Rect. pulse
EASNon-Repetitive Avalanche Energy 3.0 mJ TJ = 25 °C, IAS = 1A, L = 6mH
IARRepetitive Avalanche Current 1.0 A
Following any rated
load condition and
with rated V
RRM
Electrical Specifications
Parameters 10MQ Units Conditions
VFMMax. Forward Voltage Drop (1) 0.54 V @ 1A
* See Fig. 1 0.62 V @ 1.5A
0.49 V @ 1A
0.56 V @ 1.5A
IRMMax. Reverse Leakage Current (1) 0.5 mA TJ = 25 °C
* See Fig. 2 26 mA TJ = 125 °C
V
Threshold Voltage 0.36 V TJ = TJ max.
F(TO)
rtForward Slope Resistance 104 mΩ
CTTypical Junction Capacitance 38 pF VR = 10VDC, TJ = 25°C, test signal = 1Mhz
LSTypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJ = 25 °C
TJ = 125 °C
VR = rated V
R
applied
Thermal-Mechanical Specifications
Parameters 10MQ Units Conditions
TJMax. Junction Temperature Range ( *) - 5 5 to 150 °C
T
Max. Storage Temperature Range - 55 to 150 °C
stg
R
Max. Thermal Resistance Junction 80 °C/W DC operation
thJA
to Ambient
wt Approximate Weight 0.07(0.002) g (oz.)
Case Style SMA Similar D-64
Device Marking IR1F
(*) dPtot 1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
2 www.irf.com
Bulletin PD-20518 rev. N 07/04
6
100
10MQ040N
10
(A)
F
1
Instantaneous Forward Curent - I
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
10
T = 150°C
J
R
Re verse C urren t - I (m A)
0.0001
1
0.1
0.01
0.001
125°C
100°C
75°C
50°C
25°C
0 5 10 15 20 25 30 35 40
Re verse Volta ge - V (V)
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
100
T
T = 25°C
J
R
0.1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Junction Capacitance - C (pF)
10
0 5 10 15 20 25 30 35 40
Re ve rse Volta ge - V (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
R
3www.irf.com
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