Vishay 10ETS..SPbF High Voltage Series Data Sheet
10ETS..SPbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 10 A
Base cathode
2
DESCRIPTION/FEATURES
The 10ETS..SPbF rectifier series has been
optimized for very low forward voltage drop, with
moderate leakage. The glass passivation
technology used has reliable operation up to
150 °C junction temperature.
Typical applications are in input rectification and these
D2PAK
1 3
Anode Anode
products are designed to be used with Vishay HPP switches
PRODUCT SUMMARY
VF at 10 A < 1 V
I
FSM
V
RRM
200 A
800/1200 V
and output rectifiers which are available in identical package
outlines.
This product series has been designed and qualified for
industrial level and lead (Pb)-free.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter T
common heatsink of 1 °C/W
= 55 °C, TJ = 125 °C
A
12.0 16.0 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Sinusoidal waveform 10 A
800/1200 V
200 A
10 A, TJ = 25 °C 1.1 V
- 40 to 150 °C
Available
RoHS*
COMPLIANT
VOLTAGE RATINGS
, MAXIMUM PEAK
V
RRM
PART NUMBER
10ETS08SPbF 800 900
10ETS12SPbF 1200 1300
REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
0.5
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
2
Maximum I
Maximum I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94338 For technical questions, contact: diodes-tech@vishay.com
Revision: 06-Jun-08 1
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1450 A2√s
F(AV)
I
FSM
TC = 105 °C, 180° conduction half sine wave 10
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 200
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 145
applied 170
RRM
applied 130
RRM
A
2
A
s
www.vishay.com
10ETS..SPbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
F(TO)
RM
FM
10 A, TJ = 25 °C 1.1 V
t
TJ = 150 °C
TJ = 25 °C
T
= 150 °C 0.50
J
V
= Rated V
R
RRM
20 mΩ
0.82 V
0.05
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range T
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient (PCB mount)
Soldering temperature T
Approximate weight
Marking device Case style D
Note
(1)
When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
, T
J
Stg
DC operation 2.5
R
thJC
(1)
62
R
thJA
S
2
PAK (SMD-220)
- 40 to 150 °C
240 °C
2g
0.07 oz.
10ETS08S
10ETS12S
mA
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94338
2 Revision: 06-Jun-08
Loading...