Vishay 10ETS..S High Voltage Series Data Sheet
10ETS..S High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 10 A
Base cathode
2
DESCRIPTION/FEATURES
The 10ETS..S rectifier series has been optimized for very
low forward voltage drop, with moderate leakage. The glass
passivation technology used has reliable operation up to
150 °C junction temperature.
D2PAK
13
Anode Anode
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches
and output rectifiers which are available in identical package
PRODUCT SUMMARY
VF at 10 A < 1 V
I
FSM
V
RRM
200 A
800/1200 V
outlines.
This product series has been designed and qualified for
industrial level.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter T
common heatsink of 1 °C/W
= 55 °C, TJ = 125 °C
A
12.0 16.0 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Sinusoidal waveform 10 A
800/1200 V
200 A
10 A, TJ = 25 °C 1.1 V
- 40 to 150 °C
VOLTAGE RATINGS
, MAXIMUM PEAK
V
RRM
PART NUMBER
10ETS08S 800 900
10ETS12S 1200 1300
REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
0.510ETS10S 1000 1100
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
2
Maximum I
Maximum I
Document Number: 93486 For technical questions, contact: diodes-tech@vishay.com
Revision: 26-Aug-08 1
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1450 A2√s
F(AV)
I
FSM
TC = 105 °C, 180° conduction half sine wave 10
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 200
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 145
applied 170
RRM
applied 130
RRM
A
2
A
s
www.vishay.com
10ETS..S High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
F(TO)
RM
FM
10 A, TJ = 25 °C 1.1 V
t
TJ = 150 °C
TJ = 25 °C
T
= 150 °C 0.50
J
V
= Rated V
R
RRM
20 mΩ
0.82 V
0.05
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range T
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient (PCB mount)
Soldering temperature T
Approximate weight
Marking device Case style D
Note
(1)
When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
, T
J
Stg
DC operation 2.5
R
thJC
(1)
62
R
thJA
S
2
PAK (SMD-220)
- 40 to 150 °C
240 °C
2g
0.07 oz.
10ETS08S
10ETS10S
10ETS12S
mA
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93486
2 Revision: 26-Aug-08
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