10ETS...PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 10 A
Base
cathode
2
FEATURES/DESCRIPTION
The 10ETS...PbF rectifier series has been
optimized for very low forward voltage drop,
with moderate leakage. The glass passivation
technology used has reliable operation up to
150 °C junction temperature.
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches
TO-220AC
13
Cathode
Anode
and output rectifiers which are available in identical package
PRODUCT SUMMARY
VF at 10 A < 1 V
I
FSM
V
RRM
200 A
800 to 1200 V
outlines.
This product has been designed and qualified for industrial
level and lead (Pb)-free.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter T
common heatsink of 1 °C/W
= 55 °C, TJ = 125 °C
A
12.0 16.0 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Sinusoidal waveform 10 A
800 to 1200 V
200 A
10 A, TJ = 25 °C 1.1 V
- 40 to 150 °C
Pb-free
Available
RoHS*
COMPLIANT
VOLTAGE RATINGS
, MAXIMUM
V
RRM
PART NUMBER
10ETS08PbF 800 900
10ETS12PbF 1200 1300
PEAK REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
0.510ETS10PbF 1000 1100
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
Maximum I
Maximum I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94337 For technical questions, contact: diodes-tech@vishay.com
Revision: 19-Mar-08 1
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1450 A2√s
F(AV)
I
FSM
TC = 105 °C, 180° conduction half sine wave 10
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 200
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 145
applied 170
RRM
applied 130
RRM
A
2
A
s
www.vishay.com
10ETS...PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
F(TO)
RM
FM
10 A, TJ = 25 °C 1.1 V
t
TJ = 150 °C
TJ = 25 °C
T
= 150 °C 0.50
J
V
= Rated V
R
RRM
20 mΩ
0.82 V
0.05
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range T
Minimum thermal resistance, junction to case R
Minimum thermal resistance, junction to ambient
(PCB mount)
Soldering temperature T
, T
J
Stg
DC operation 2.5
thJC
(1)
R
62
thJA
S
Approximate weight
Marking device Case style TO-220AC
Note
(1)
When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
- 40 to 150 °C
240 °C
2g
0.07 oz.
10ETS08
10ETS10
10ETS12
mA
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94337
2 Revision: 19-Mar-08