D2PAK (SMD-220)
PRODUCT SUMMARY
V
RRM
V
at 10 A < 1.2 V
F
t
rr
Base
common
cathode
+
1
--
Anode
200 to 600 V
10ETF..S Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 10 A
FEATURES/DESCRIPTION
The 10ETF..S fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
2
3
Anode
50 ns
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
This product series has been designed and qualified for
industrial level.
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
• Input rectifications where severe restrictions on conducted
EMI should be met
Vishay High Power Products
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
RRM
I
F(AV)
I
FSM
t
rr
V
F
T
J
Sinusoidal waveform 10
1 A, 100 A/µs 50 ns
10 A, TJ = 25 °C 1.2 V
Range - 40 to 150 °C
200 to 600 V
150
A
VOLTAGE RATINGS
, MAXIMUM PEAK
V
RRM
PART NUMBER
10ETF02S 200 300
10ETF06S 600 700
REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
2 10ETF04S 400 500
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√ t for fusing I 2√ t t = 0.1 to 10 ms, no voltage reapplied 1125 A 2√ s
F(AV)
I
FSM
TC = 128 °C, 180° conduction half sine wave 10
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 160
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 160
applied 150
RRM
applied 112.5
RRM
A
2
A
s
Document Number: 93134 For technical questions, contact: diodes-tech@vishay.com
Revision: 22-Oct-08 1
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10ETF..S Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery
Rectifier Diode, 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
F(TO)
RM
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
Reverse recovery current I
rr
rr
Reverse recovery charge Q
Snap factor S 0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance
junction to case
Maximum thermal resistance
junction to ambient (PCB mount)
Soldering temperature T
Approximate weight
Marking device Case style D
Note
(1)
When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
, T
T
J
R
thJC
R
thJA
10 A, TJ = 25 °C 1.2 V
t
rr
Stg
TJ = 150 °C
TJ = 25 °C
T
= 150 °C 2.0
J
IF at 10 Apk
25 A/µs
25 °C
V
= Rated V
R
145 ns
2.75 A
0.32 µC
RRM
12.7 mΩ
1.25 V
0.1
I
FM
t
rr
dir
dt
- 40 to 150 °C
DC operation 1.5
(1)
240 °C
S
40
2g
0.07 oz.
10ETF02S
2
PAK (SMD-220)
10ETF04S
10ETF06S
mA
I
RM(REC)
°C/W
t
Q
rr
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Document Number: 93134
2 Revision: 22-Oct-08
10ETF..S Soft Recovery Series
150
145
140
135
130
Temperature (°C)
125
Maximum Allowable Case
120
0
150
145
140
135
Fast Soft Recovery
Rectifier Diode, 10 A
10ETF..S Series
(DC) = 1.5 °C/W
R
thJC
Ø
Condu ction angle
120°
60°
30°
2 8
4
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
90°
6
10ETF..S Series
(DC) = 1.5 °C/W
R
thJC
Condu ction period
18 0°
10 12
Ø
20
16
12
8
Power Loss (W)
4
Maximum Average Forward
0
0
160
140
120
100
Vishay High Power Products
10ETF..S Series
= 150 °C
T
J
RMS limit
30°
4 8
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
At any rated load condition and w ith
rated V
RRM
90°
18 0°
120°
60°
DC
Ø
Conduction period
12
applied follow ing su rge.
Initial TJ = 150 °C
at 60 Hz 0.008 3 s
at 50 Hz 0.0100 s
16
130
Temperature (°C)
125
Maximum Allowable Case
120
01 0
16
14
12
10
8
6
Power Loss (W)
4
Maximum Average Forward
2
0
0
Fig. 3 - Forward Power Loss Characteristics
60°
120°
30°
21 2
4 8 14
90°
6
DC
18 0°
16
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
120°
90°
RMS limit
2
60°
30°
Condu ction angle
10ETF..S Series
T
= 150 °C
J
46
18 0°
Ø
8
10
Average Forward Current (A)
80
Forward Current (A)
Peak Half Sine Wave
60
10ETF..S Series
40
1 10 100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
18 0
Maximu m non-repetitiv e su rge cu rrent
160
140
120
100
8 0
Forward Current (A)
Peak Half Sine Wave
60
40
0.01 0.1 1
v ersu s pu lse train du ration.
Initial TJ = 150 °C
N o v oltage reapplied
Rated V
10ETF..S Series
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
reapplied
RRM
Document Number: 93134 For technical questions, contact: diodes-tech@vishay.com
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Revision: 22-Oct-08 3
10ETF..S Soft Recovery Series
Vishay High Power Products
100
10ETF..S Series
TJ = 150 °C
= 25 °C
T
10
Instantaneous Forward Current (A)
1
0.5 1.0 1.5 2.0 2.5 3.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.20
0.15
0.10
- Maximum Reverse
0.05
Recovery Time (µs)
rr
t
10ETF..S Series
= 25 °C
T
J
0
0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
IFM = 20 A
IFM = 1 A
Fast Soft Recovery
Rectifier Diode, 10 A
IFM = 10 A
IFM = 5 A
IFM = 2 A
= 25 °C
J
1.4
- Maximum Reverse
rr
Q
10ETF..S Series
= 25 °C
T
J
1.2
1.0
0.8
0.6
0.4
Recovery Charge (µC)
0.2
0
0 40 80 120 160 200
IFM = 20 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
2.5
- Maximum Reverse
rr
Q
10ETF..S Series
= 150 °C
T
J
2.0
1.5
1.0
Recovery Charge (µC)
0.5
0
0 40 80 120 160 200
IFM = 20 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
IFM = 10 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
IFM = 10 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
= 25 °C
J
= 150 °C
J
0.4
10ETF..S Series
= 150 °C
T
J
0.3
IFM = 20 A
IFM = 10 A
IFM = 1 A
- Maximum Reverse
rr
t
0.2
0.1
Recovery Time (µs)
0
0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
IFM = 5 A
IFM = 2 A
= 150 °C
J
15
12
9
6
- Maximum Reverse
Recovery Current (A)
rr
3
I
0
10ETF..S Series
= 25 °C
T
J
0 40 80 120 160 200
IFM = 20 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
IFM = 10 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
= 25 °C
J
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Document Number: 93134
4 Revision: 22-Oct-08
10ETF..S Soft Recovery Series
Fast Soft Recovery
Vishay High Power Products
Rectifier Diode, 10 A
20
10ETF..S Series
= 150 °C
T
J
16
12
8
- Maximum Reverse
Recovery Current (A)
rr
4
I
0
0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
1
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
0.1
0.01
Single pu lse
0.001
- Transient Thermal Impedance (°C/W)
thJC
Z
Fig. 14 - Thermal Impedance Z
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Square Wave Pulse Duration (s)
Characteristics
thJC
Steady state v alu e
(DC operation)
10ETF..S Series
10 0.001 0.01 0.1 1
Document Number: 93134 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 22-Oct-08 5
10ETF..S Soft Recovery Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
10 E T F 06 S TRL -
1 - Current rating (10 = 10 A)
2 - Circuit configuration:
E = Single diode
- Package:
3
T = D
4 - Type of silicon:
F = Fast soft recovery rectifier
5 - Voltage code x 100 = V
6 - S = Surface mountable
7 -
8 -
Fast Soft Recovery
Rectifier Diode, 10 A
5 13 24678
2
PAK (TO-220AC)
02 = 200 V
RRM
None = Tube
TRR = Tape and reel (right oriented)
TRL = Tape and reel (left oriented)
None = Standard production
PbF = Lead (Pb)-free
04 = 400 V
06 = 600 V
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95046
Part marking information http://www.vishay.com/doc?95054
Packaging information http://www.vishay.com/doc?95032
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
6 Revision: 22-Oct-08
Document Number: 93134
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1