10ETF..SPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 10 A
FEATURES/DESCRIPTION
Base
common
cathode
+
2
The 10ETF..SPbF fast soft recovery rectifier series
has been optimized for combined short reverse
recovery time and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
Vishay High Power Products
Available
RoHS*
COMPLIANT
This product series has been designed and qualified for
industrial level and lead (Pb)-free.
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
• Input rectifications where severe restrictions on conducted
EMI should be met
D2PAK (SMD-220)
PRODUCT SUMMARY
VF at 10 A < 1.33 V
t
rr
V
RRM
1
--
Anode
1000/1200 V
3
Anode
80 ns
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
Sinusoidal waveform 10 A
1000/1200 V
160 A
10 A, TJ = 25 °C 1.33 V
1 A, 100 A/µs 80 ns
Range - 40 to 150 °C
VOLTAGE RATINGS
, MAXIMUM PEAK REVERSE
V
PART NUMBER
RRM
10ETF10SPbF 1000 1100
10ETF12SPbF 1200 1300
VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
4
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle non-repetitive
surge current
2
Maximum I
Maximum I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94094 For technical questions, contact: diodes-tech@vishay.com
Revision: 22-Oct-08 1
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1800 A2√s
F(AV)
I
FSM
TC = 125 °C, 180° conduction half sine wave 10
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 185
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 180
applied 160
RRM
applied 128
RRM
A
2
A
s
www.vishay.com
10ETF..SPbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery
Rectifier Diode, 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
F(TO)
RM
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
Reverse recovery current I
Reverse recovery charge Q
Typical snap factor S 0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient (PCB mount)
Soldering temperature T
Approximate weight
Marking device
Note
(1)
When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
, T
T
J
R
thJC
R
thJA
10 A, TJ = 25 °C 1.33 V
t
rr
rr
rr
Stg
TJ = 150 °C
TJ = 25 °C
T
= 150 °C 4
J
IF at 10 Apk
25 A/µs
25 °C
V
= Rated V
R
RRM
310 ns
4.7 A
1.05 µC
22.9 mΩ
0.96 V
0.1
- 40 to 150 °C
DC operation 1.5
(1)
S
240 °C
0.07 oz.
Case style D
2
PAK (SMD-220)
I
FM
t
rr
dir
dt
I
RM(REC)
62
2g
10ETF10S
10ETF12S
mA
Q
°C/W
t
rr
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94094
2 Revision: 22-Oct-08
10ETF..SPbF Soft Recovery Series
150
145
140
135
130
125
Temperature (°C)
Maximum Allowable Case
120
115
150
145
140
135
130
125
Temperature (°C)
Maximum Allowable Case
120
115
Fast Soft Recovery
Rectifier Diode, 10 A
10ETF.. Series
(DC) = 1.5 °C/W
R
thJC
Ø
Conduction angle
180°
60°
30°
0
6
42 8
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
30°
60°
90°
212
010
6
4 8 14
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
120°
90°
10ETF.. Series
(DC) = 1.5 °C/W
R
thJC
Conduction period
120°
180°
10 12
Ø
DC
16
24
20
16
12
Power Loss (W)
Maximum Average Forward
180
160
140
120
100
80
Forward Current (A)
Peak Half Sine Wave
60
40
Vishay High Power Products
DC
180°
120°
90°
60°
30°
RMS limit
8
4
0
0
2
4 8
6
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
At any rated load condition and with
rated V
10ETF.. Series
1 10 100
applied following surge.
RRM
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Ø
Conduction period
10ETF.. Series
= 150 °C
T
J
12
10
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
14
16
16
14
12
10
Power Loss (W)
Maximum Average Forward
180°
120°
90°
60°
30°
8
6
4
2
0
0
RMS limit
Ø
Conduction angle
10ETF.. Series
= 150 °C
T
J
462
8
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
10
200
180
160
140
120
100
80
Forward Current (A)
Peak Half Sine Wave
60
40
Maximum non-repetitive surge current
versus pulse train duration.
10ETF.. Series
0.01 0.1 1
Initial TJ = 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94094 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 22-Oct-08 3