FAST SOFT RECOVERY
RECTIFIER DIODE
Lead-Free ("PbF" suffix)
Description/ Features
The 10ETF12SPbF fast soft recovery QUIETIR
rectifier series has been optimized for combined
short reverse recovery time and low forward
voltage drop.
The glass passivation ensures stable reliable
operation in the most severe temperature and
power cycling conditions.
Bulletin I2205 03/05
QUIETIR Series
10ETF12SPbF
VF< 1.33V @ 10A
t
= 80ns
rr
V
= 1200V
RRM
Typical applications are both:
output rectification and freewheeling in
inverters, choppers and converters
and input rectifications where severe
restrictions on conducted EMI should be met.
Major Ratings and Characteristics
Characteristics Values Units
I
Sinusoidal waveform 10 A
F(AV)
V
RRM
I
FSM
VF@ 10 A, TJ = 25°C 1.33 V
trr@ 1A, 100A/µs 80 ns
TJrange - 40 to 150 °C
1200 V
160 A
Package Outline
2
Pak (SMD-220)
D
10ETF12SPbF QUIETIR Series
Bulletin I2205 03/05
Voltage Ratings
V
, maximum V
RRM
Part Number
peak reverse voltage peak reverse voltage 150°C
VVmA
10ETF12S 1200 1300 4
Absolute Maximum Ratings
Parameters 10ETF..S Units Conditions
I
Max. Average Forward Current 10 A @ TC = 125° C, 180° conduction half sine wave
F(AV)
I
Max. Peak One Cycle Non-Repetitive 160 10ms Sine pulse, rated V
FSM
Surge Current 185 10ms Sine pulse, no voltage reapplied
I2t Max. I2t for fusing 128 10ms Sine pulse, rated V
180 10ms Sine pulse, no voltage reapplied
I2√t Max. I2√t for fusing 1800 A2√s t = 0.1 to 10ms, no voltage reapplied
A
A2s
, maximum non repetitive I
RSM
applied
RRM
applied
RRM
RRM
Electrical Specifications
Parameters 10ETF..S Units Conditions
VFMMax. Forward Voltage Drop 1.33 V @ 10A, TJ = 25°C
rtForward slope resistance 22.9 m Ω TJ = 150°C
V
Threshold voltage 0.96 V
F(TO)
IRMMax. Reverse Leakage Current 0.1 TJ = 25 °C
4T
mA
= 150 °C
J
Recovery Characteristics
Parameters 10ETF..S Units Conditions
trrReverse Recovery Time 310 ns IF @ 10Apk
IrrReverse Recovery Current 4.7 A @ 25A/ µs
QrrReverse Recovery Charge 1.05 µC @ 25°C
S Typical Snap Factor 0.6
VR = rated V
RRM
10ETF12SPbF QUIETIR Series
Thermal-Mechanical Specifications
Parameters 10ETF..S Units Conditions
TJMax. Junction Temperature Range - 40 to 150 °C
T
Max. Storage Temperature Range - 40 to 150 °C
stg
R
Max. Thermal Resistance Junction 1.5 °C/W DC operation
thJC
to Case
R
Max. Thermal Resistance Junction 62 °C/W
thJA
to Ambient (PCB Mount)**
TsSoldering Temperature 240 °C
wt Approximate Weight 2 (0.07) g (oz.)
Case Style D2Pak (SMD-220)
Marking Device 10ETF12S
** When mounted on 1" square (650mm2) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W
For recommended footprint and soldering techniques refer to application note #AN-994
Bulletin I2205 03/05
150
145
140
135
130
125
120
115
Maximum Allowable Case Temperature (°C)
024681012
Average Forward Current (A)
10ETF.. Series
R (DC) = 1.5 °C /W
thJC
Cond uction Ang le
30°
60°
90°
120°
180°
Fig. 1 - Current Rating Characteristics
16
14
12
10
8
6
4
2
0
Maximum Average Forward Power Loss (W)
0246810
180°
120°
90°
60°
30°
RM S Lim i t
Conduc tion Angle
10.TF.. Series
T = 150°C
J
Average Forward Current (A)
150
145
140
135
130
125
120
115
Maximum Allowable Case Temperature (°C)
0 2 4 6 8 10121416
Average Forward Current (A)
10ETF.. Serie s
R ( DC) = 1.5 °C /W
thJC
30°
60°
90°
Cond uction Period
120°
180°
Fig. 2 - Current Rating Characteristics
24
DC
180°
20
120°
90°
60°
16
30°
12
RM S Lim i t
8
4
0
Maximum Average Forward Power Loss (W)
0 2 4 6 8 10 12 14 16
Average Forward Current (A)
Conduction Period
10ETF.. Series
T = 150°C
J
Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics
DC