Vishay 10CTQ150SPbF, 10CTQ150-1PbF Data Sheet

10CTQ150SPbF/10CTQ150-1PbF

Vishay High Power Products

Schottky Rectifier, 2 x 5 A

10CTQ150SPbF 10CTQ150-1PbF

 

Base

 

 

common

 

 

cathode

 

 

2

 

1

2

3

Common

Anode

cathode

Anode

 

D2PAK

 

 

Base

 

 

common

 

 

cathode

 

 

2

 

1

2

3

Common

Anode

cathode

Anode

 

TO-262

 

PRODUCT SUMMARY

IF(AV)

2 x 5 A

VR

150 V

FEATURES

• 175 °C TJ operation

Center tap configuration

Available

RoHS*

Low forward voltage drop

COMPLIANT

High frequency operation

High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

Guard ring for enhanced ruggedness and long term reliability

Lead (Pb)-free (“PbF” suffix)

Designed and qualified for industrial level

DESCRIPTION

This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

 

 

 

 

SYMBOL

 

CHARACTERISTICS

 

 

VALUES

UNITS

 

 

 

 

 

 

 

 

 

 

 

 

 

IF(AV)

Rectangular waveform

 

 

 

10

 

A

VRRM

 

 

 

 

 

 

 

150

 

V

IFSM

tp = 5 µs sine

 

 

 

620

 

A

VF

5 Apk, TJ = 125 °C (per leg)

 

 

0.73

 

V

TJ

Range

 

 

 

 

 

 

- 55 to 175

 

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

VOLTAGE RATINGS

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

 

 

 

 

SYMBOL

 

 

10CTQ150SPbF

UNITS

 

 

 

 

 

 

10CTQ150-1PbF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum DC reverse voltage

 

 

 

 

VR

 

 

150

 

V

Maximum working peak reverse voltage

 

 

 

VRWM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ABSOLUTE MAXIMUM RATINGS

 

 

 

 

 

 

 

PARAMETER

 

SYMBOL

 

TEST CONDITIONS

VALUES

 

UNITS

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum average

per leg

 

 

 

 

 

 

 

5

 

 

forward current

 

 

IF(AV)

 

50 % duty cycle at TC = 155 °C, rectangular waveform

 

 

A

 

per device

 

10

 

See fig. 5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum peak one cycle non-repetitive

 

 

 

5 µs sine or 3 µs rect. pulse

 

Following any rated load

620

 

 

surge current per leg

 

IFSM

 

 

 

 

condition and with rated

 

 

A

 

 

10 ms sine or 6 ms rect. pulse

 

115

 

See fig. 7

 

 

 

 

 

VRRM applied

 

 

Non-repetitive avalanche energy per leg

EAS

 

TJ = 25 °C, IAS = 1 A, L = 10 mH

 

5

 

mJ

Repetitive avalanche current per leg

IAR

 

Current decaying linearly to zero in 1 µs

1

 

A

 

Frequency limited by TJ maximum VA = 1.5 x VR typical

 

 

 

 

 

 

 

 

 

 

* Pb containing terminations are not RoHS compliant, exemptions may apply

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Document Number: 94116

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

Revision: 06-Oct-08

 

 

 

 

 

 

 

 

 

1

Vishay 10CTQ150SPbF, 10CTQ150-1PbF Data Sheet

10CTQ150SPbF/10CTQ150-1PbF

Vishay High Power Products Schottky Rectifier, 2 x 5 A

ELECTRICAL SPECIFICATIONS

 

 

 

 

 

 

 

 

 

PARAMETER

SYMBOL

TEST CONDITIONS

 

VALUES

UNITS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5 A

TJ = 25 °C

 

 

0.93

 

 

 

 

 

 

 

 

 

 

 

 

Maximum forward voltage drop per leg

VFM (1)

10 A

 

 

1.10

 

V

 

 

 

 

 

See fig. 1

5 A

TJ = 125 °C

 

 

0.73

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10 A

 

 

0.86

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum reverse leakage current per leg

IRM (1)

TJ = 25 °C

VR = Rated VR

 

 

0.05

 

mA

See fig. 2

TJ = 125 °C

 

 

7

 

 

 

 

 

 

 

 

Threshold voltage

VF(TO)

TJ = TJ maximum

 

 

0.468

 

V

Forward slope resistance

rt

 

 

28

 

 

 

 

 

 

 

Maximum junction capacitance per leg

CT

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

 

200

 

pF

Typical series inductance per leg

LS

Measured lead to lead 5 mm from package body

 

 

8.0

 

nH

Maximum voltage rate of change

dV/dt

Rated VR

 

 

10 000

 

V/µs

Note

 

 

 

 

 

 

 

 

 

 

(1) Pulse width < 300 µs, duty cycle < 2 %

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL - MECHANICAL SPECIFICATIONS

 

 

 

 

 

 

PARAMETER

SYMBOL

TEST CONDITIONS

 

VALUES

 

 

UNITS

 

 

 

 

 

 

 

 

 

 

 

 

Maximum junction and storage

TJ, TStg

 

 

 

- 55 to 175

 

 

°C

temperature range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum thermal resistance,

 

 

 

 

3.50

 

 

 

 

junction to case per leg

 

 

 

 

 

 

 

 

RthJC

DC operation

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum thermal resistance,

 

1.75

 

 

°C/W

 

 

 

 

 

 

junction to case per package

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Typical thermal resistance,

RthCS

Mounting surface, smooth and greased

 

0.50

 

 

 

 

case to heatsink (only for TO-220)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Approximate weight

 

 

 

 

2

 

 

 

 

g

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.07

 

 

oz.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Mounting torque

minimum

 

 

 

 

6 (5)

 

 

kgf · cm

 

 

 

 

 

 

 

 

 

(lbf · in)

maximum

 

 

 

 

12 (10)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Marking device

 

Case style D2PAK

 

 

10CTQ150S

 

Case style TO-262

 

 

10CTQ150-1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

www.vishay.com

For technical questions, contact: diodes-tech@vishay.com

Document Number: 94116

2

 

Revision: 06-Oct-08

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