Vishay 10CTQ150SPbF, 10CTQ150-1PbF Data Sheet
10CTQ150SPbF/10CTQ150-1PbF
Vishay High Power Products
Schottky Rectifier, 2 x 5 A
10CTQ150SPbF
10CTQ150-1PbF
FEATURES
• 175 °C TJ operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
Base
common
cathode
2
Base
common
cathode
2
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
1
Anode Anode
2
Common
cathode
2
D
PAK
3
1
Anode Anode
2
Common
cathode
3
TO-262
• Designed and qualified for industrial level
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 5 A
150 V
technology allows for reliable operation up to 175 °C junction
temperature. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 10 A
150 V
tp = 5 µs sine 620 A
5 Apk, TJ = 125 °C (per leg) 0.73 V
Range - 55 to 175 °C
Available
RoHS*
COMPLIANT
VOLTAGE RATINGS
PARAMETER SYMBOL
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
10CTQ150SPbF
10CTQ150-1PbF
150 V
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94116 For technical questions, contact: diodes-tech@vishay.com
Revision: 06-Oct-08 1
per leg
per device 10
I
F(AV)
I
FSM
50 % duty cycle at TC = 155 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 115
TJ = 25 °C, IAS = 1 A, L = 10 mH 5 mJ
AS
AR
Current decaying linearly to zero in 1 µs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
620
5
A
A
1A
www.vishay.com
10CTQ150SPbF/10CTQ150-1PbF
Vishay High Power Products
Schottky Rectifier, 2 x 5 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
5 A
Maximum forward voltage drop per leg
See fig. 1
V
FM
10 A 1.10
(1)
5 A
10 A 0.86
Maximum reverse leakage current per leg
See fig. 2
I
RM
Threshold voltage V
Forward slope resistance r
Maximum junction capacitance per leg C
Typical series inductance per leg L
F(TO)
TJ = 25 °C
(1)
T
= 125 °C 7
J
TJ = TJ maximum
t
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 200 pF
T
Measured lead to lead 5 mm from package body 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.93
0.73
0.05
0.468 V
28 mΩ
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink (only for TO-220)
Approximate weight
Mounting torque
Marking device
minimum 6 (5)
maximum 12 (10)
T
, T
J
Stg
R
DC operation
thJC
R
thCS
- 55 to 175 °C
3.50
1.75
Mounting surface, smooth and greased 0.50
2g
0.07 oz.
Case style D
2
PAK 10CTQ150S
Case style TO-262 10CTQ150-1
°C/W
kgf · cm
(lbf · in)
V
mA
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94116
2 Revision: 06-Oct-08
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