Vishay 10BQ100 Data Sheet
Bulletin PD-2.437 rev. H 07/04
10BQ100
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics 10BQ100 Units
I
Rectangular waveform 1.0 A
F(AV)
V
RRM
I
@ tp = 5 µs sine 780 A
FSM
VF@ 1.0 Apk, TJ=125°C 0.62 V
TJrange - 55 to 175 °C
100 V
1 Amp
I
= 1 Amp
F(AV)
VR = 100V
Description/ Features
The 10BQ100 surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and very
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
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Case Styles
10BQ100
SMB
1
10BQ100
Bulletin PD-2.497 rev. H 07/04
Voltage Ratings
Part number 10BQ100
VRMax. DC Reverse Voltage (V)
V
Max. Working Peak Reverse Voltage (V)
RWM
100
Absolute Maximum Ratings
Parameters 10BQ Units Conditions
I
Max. Average Forward Current 1.0 A 50% duty cycle @ TL = 152 °C, rectangular wave form
F(AV)
I
Max. Peak One Cycle Non-Repetitive 7 80 A 5µs Sine or 3µs Rect. pulse
FSM
Surge Current 38 10ms Sine or 6ms Rect. pulse
EASNon- Repetitive Avalanche Energy 1.0 mJ TJ = 25 °C, IAS = 0.5A, L = 8mH
IARRepetitive Avalanche Current 0.5 A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Following any rated
load condition and
with rated V
RRM
applied
Electrical Specifications
Parameters 10BQ Units Conditions
VFMMax. Forward Voltage Drop (1) 0.78 V @ 1A
* See Fig. 1 0.89 V @ 2A
0.62 V @ 1A
0.72 V @ 2A
IRMMax. Reverse Leakage Current (1) 0.5 mA TJ = 25 °C
* See Fig. 2 1 mA TJ = 125 °C
CTTypical Junction Capacitance 42 pF VR = 5VDC, (test signal range 100kHz to 1MHz) 25°C
LSTypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Volatge Rate of Charge 10000 V/ µs
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJ = 25 °C
TJ = 125 °C
VR = rated V
R
Thermal-Mechanical Specifications
Parameters 10BQ Units Conditions
TJMax. Junction Temperature Range (*) - 55 to 175 °C
T
Max. Storage Temperature Range - 55 to 175 °C
stg
R
Max. Thermal Resistance Junction 36 °C/W DC operation
thJL
to Lead (**)
R
Max. Thermal Resistance Junction 80 °C/W
thJA
to Ambient
wt Approximate Weight 0.10 (0.003) g (oz.)
Case Style SMB Similar DO-214AA
Device Marking IR1J
(*) dPtot 1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
(**) Mounted 1 inch square PCB
2
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10
0.00001
0.0001
0.001
0.01
0.1
1
10
0 20406080100
75˚C
25˚C
Tj = 175˚C
150˚C
125˚C
100˚C
50˚C
Tj = 175˚C
Tj = 125˚C
(mA)
R
10BQ100
Bulletin PD-2.497 rev. H 07/04
(A)
F
Tj = 25˚C
1
Instantaneous Forward Current - I
0.1
0.2 0.4 0.6 0.8 1
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
Reverse Current - I
Reverse Voltage - VR (V)
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
100
T = 25˚C
J
(p F)
T
Junction Capacitance - C
10
0 20406080100
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
(°C/W)
thJC
10
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
1
D = 0.75
Notes:
1. Duty factor D = t1/ t2 .
2. Peak Tj = Pdm x ZthJC + Tc .
Thermal Impedance Z
(Thermal Resistance)
Single Pulse
0.1
0.00001 0.0001 0.001 0.01 0.1 1 1 0 100
t1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
Characteristics (Per Leg)
thJC
t
1
t
2
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