Vishay 10BQ015PbF Data Sheet
Bulletin PD-20782 07/04
10BQ015PbF
SCHOTTKY RECTIFIER 1 Amp
I
= 1.0Amp
F(AV)
VR = 15V
Major Ratings and Characteristics
Characteristics Values Units
I
Rectangular 1.0 A
F(AV)
waveform
V
RRM
I
@ tp = 5 µs sine 140 A
FSM
VF@ 1.0 Apk, TJ=125°C 0.32 V
TJrange - 55 to 125 °C
15 V
Description/ Features
The 10BQ015PbF surface mount Schottky rectifier has been
designed for applications requiring low forward drop and very
small foot prints on PC boards. The proprietary barrier
technology allows for reliable operation up to 125°C junction
temperature. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes,
battery charging, and reverse battery protection.
125°C TJ operation (VR < 5V)
Optimized for OR-ing applications
Ultra low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Lead-Free ("PbF" suffix)
Case Styles
10BQ015PbF
www.irf.com
SMB
1
10BQ015PbF
Bulletin PD-20782 07/04
Voltage Ratings
Part number 10BQ015PbF
VRMax. DC Reverse Voltage (V) 15
V
Max. Working Peak Reverse Voltage (V) 25
RWM
Absolute Maximum Ratings
Parameters 10BQ Units Conditions
I
Max. Average Forward Current 1.0 A 50% duty cycle @ TL = 84 °C, rectangular wave form.
F(AV)
* See Fig. 5
I
Max. Peak One Cycle Non-Repetitive 140 5µs Sine or 3µs Rect. pulse
FSM
Surge Current * See Fig. 7 40 10ms Sine or 6ms Rect. pulse
A
EASNon-Repetitive Avalanche Energy 1.0 mJ TJ = 25 °C, IAS = 1A, L = 2mH
IARRepetitive Avalanche Current 1.0 A Current decayng linearly to zero in 1 µsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Following any rated
load condition and
with rated V
RRM
applied
Electrical Specifications
Parameters 10BQ Units Conditions
VFMMax. Forward Voltage Drop (1) 0.35 V @ 1.0A
* See Fig. 1 0.44 V @ 2.0A
0.32 V @ 1.0A
0.40 V @ 2.0A
IRMMax. Reverse Leakage Current (1) 0.5 mA TJ = 25 °C
* See Fig. 2 12 mA TJ = 100 °C
V
Threshold Voltage - V TJ = TJ max.
F(TO)
rtForward Slope Resistance - mΩ
C TTypical Junction Capacitance 390 pF VR = 5VDC, (test signal range 100KHz to 1MHz) 25°C
L STypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs (Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJ = 25 °C
TJ = 125 °C
VR = rated V
R
Thermal-Mechanical Specifications
Parameters 10BQ Units Conditions
TJMax. Junction Temperature Range (*) - 55 to 125 °C
T
Max. Storage Temperature Range - 55 to 150 °C
stg
R
Max. Thermal Resistance 36 °C/W DC operation (See Fig. 4)
thJL
Junction to Lead (**)
R
Max. Thermal Resistance 80 °C/W DC operation
thJA
Junction to Ambient
wt Approximate Weight 0.10 (0.003) g (oz.)
Case Style SMB Similar to DO-214AA
Device Marking IR1C
(*) dPtot 1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
(**) Mounted 1 inch square PCB
2
www.irf.com
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