The 10BQ015 surface mount Schottky rectifier has been
designed for applications requiring low forward drop and very
small foot prints on PC boards. The proprietary barrier
technology allows for reliable operation up to 125°C junction
temperature. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes,
battery charging, and reverse battery protection.
125°C TJ operation (VR < 5V)
Optimized for OR-ing applications
Ultra low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Case Styles
10BQ015
www.irf.com
SMB
1
10BQ015
Bulletin PD-2.396 rev. I 07/04
Voltage Ratings
Part number10BQ015
VRMax. DC Reverse Voltage (V)15
V
Max. Working Peak Reverse Voltage (V)25
RWM
Absolute Maximum Ratings
Parameters10BQ UnitsConditions
I
Max. Average Forward Current1.0A50% duty cycle @ TL = 84 °C, rectangular wave form.
F(AV)
* See Fig. 5
I
Max. Peak One Cycle Non-Repetitive1405µs Sine or 3µs Rect. pulse
FSM
A
Surge Current * See Fig. 74010ms Sine or 6ms Rect. pulse
EASNon-Repetitive Avalanche Energy1.0mJTJ = 25 °C, IAS = 1A, L = 2mH
IARRepetitive Avalanche Current1.0ACurrent decayng linearly to zero in 1 µsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Following any rated
load condition and
with rated V
RRM
applied
Electrical Specifications
Parameters10BQ UnitsConditions
VFMMax. Forward Voltage Drop(1)0.35V@ 1.0A
* See Fig. 10.44V@ 2.0A
0.32V@ 1.0A
0.40V@ 2.0A
IRMMax. Reverse Leakage Current (1)0.5mATJ = 25 °C
* See Fig. 212mATJ = 100 °C
V
Threshold Voltage-VTJ = TJ max.
F(TO)
rtForward Slope Resistance-mΩ
C TTypical Junction Capacitance390pFVR = 5VDC, (test signal range 100KHz to 1MHz) 25°C
L STypical Series Inductance2.0nHMeasured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change10000V/µs (Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJ = 25 °C
TJ = 125 °C
VR = rated V
R
Thermal-Mechanical Specifications
Parameters10BQ UnitsConditions
TJMax. Junction Temperature Range (*) - 55 to 125°C
T
Max. Storage Temperature Range- 55 to 150°C
stg
R
Max. Thermal Resistance36°C/W DC operation (See Fig. 4)
thJL
Junction to Lead(**)
R
Max. Thermal Resistance80°C/W DC operation
thJA
Junction to Ambient
wtApproximate Weight0.10 (0.003) g (oz.)
Case StyleSMBSimilar to DO-214AA
Device MarkingIR1C
(*) dPtot1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
(**) Mounted 1 inch square PCB
2
www.irf.com
10BQ015
Bulletin PD-2.396 rev. I 07/04
10
(A)
F
1
Instantaneous Forward Current - I
T = 100˚C
J
T = 75˚C
J
T = 25˚C
J
10
T = 100˚C
J
(mA)
1
R
75˚C
50˚C
0.1
25˚C
Reverse Current - I
0.01
03691215
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
1000
(pF)
T
T = 25˚C
J
100
0.1
00.20.40.60.81
Forward Voltage Drop - VFM (V)
Fig. 1 - Max. Forward Voltage Drop Characteristics
100
D = 0.75
D = 0.50
10
D = 0.33
D = 0.25
D = 0.20
(°C/W)
thJC
1
Single Pulse
Thermal Impedance Z
0.1
0.000010.00010.0010.010.1110100
(Thermal Resistance)
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
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Junction Capacitance - C
10
03691215
Fig. 3 - Typical Junction Capacitance
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J
Characteristics (Per Leg)
thJC
Reverse Voltage - VR (V)
Vs. Reverse Voltage
P
DM
t
1
t
2
2
1
C
thJC
DM
3
10BQ015
Bulletin PD-2.396 rev. I 07/04
100
80
Square wave (D = 0.50)
60
80% Rated V applied
Allowable Case Temperature - (°C)
40
00.30.60.91.21.5
R
see note (2)
Average Forward Current - IF
DC
(AV)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
1000
FSM (A)
100
(A)
At Any Rated Load Condition
And With Rated V Applied
Following Surge
RRM
0.5
D = 0.20
D = 0.25
0.4
D = 0.33
D = 0.50
D = 0.75
0.3
RMS Limit
0.2
0.1
Average Power Loss - (Watts)
0
00.30.60.91.21.5
Average Forward Current - IF
Fig. 6 - Forward Power Loss
Characteristics
(AV)
DC
(A)
(2) Formula used: TC = TJ - (Pd + Pd
Pd = Forward Power Loss = I
Pd
= Inverse Power Loss = VR1 x IR (1 - D); IR @ V
REV
4
10
Non-Repetitive Surge Current - I
10100100010000
Square Wave Pulse Duration - t
(microsec)
p
Fig. 7 - Max. Non-Repetitive Surge Current
) x R
thJC
;
F(AV)
/ D) (see Fig. 6);
= 80% rated V
R1
R
F(AV)
REV
x VFM @ (I
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Outline Table
10BQ015
Bulletin PD-2.396 rev. I 07/04
Device Marking: IR1C
2.15 (.085)
1.80 (.071)
2.40 (.094)
1.90 (.075)
1.30 (.051)
0.76 (.030)
4.70 (.185)
4.10 (.161)
5.60 (.220)
5.00 (.197)
3.80 (.150)
3.30 (.130)
0.30 (.012)
0.15 (.006)
CATHODEANODE
12
2.5 TYP.
2
SOLDERING PAD
4.2 (.165)
4.0 (.157)
POLARITYPART NUMBER
1
(.098 TYP.)
2.0 TYP.
(.079 TYP.)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
www.irf.com
IR1C
YYWWX
VOLTAGE
CURRENT
IR LOGO
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digi t of the YEAR "standard product"
"P" = "Lead-Free"
5
10BQ015
Bulletin PD-2.396 rev. I 07/04
Tape & Reel Information
Ordering Information Table
Dimensions in millimetres and (inches)
Device Code
10 B Q 015 TR -
5
24
1
1-Current Rating
2-B = Single Lead Diode
3-Q = Schottky Q Series
4-Voltage Rating (015 = 15V)
5-y none= Box (1000 pieces)
3
y TR = Tape & Reel (3000 pieces)
6y none = Standard Production
y PbF = Lead-Free
This product has been designed and qualified for Industrial Level.
Data and specifications subject to change without notice.
Qualification Standards can be found on IR's Web site.
6
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
Visit us at www.irf.com for sales contact information. 07/04
6
TAC Fax: (310) 252-7309
www.irf.com
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