The Valco Helium Purifier (HP2) and Nitrogen Purifier (NP2) provide “pointof-use” carrier gas purification to sub-ppm levels of gaseous impurities.
Designed originally for the Valco Trace Gas Analysis system with its Helium
Ionization Detectors, the Helium Purifier provides point-of-use ultrahighpurity helium for use in any chromatographic application requiring highquality helium or other noble gas (Ar, Ne, Kr, Xe). The Nitrogen Purifier was
developed for use with our Electron Capture Detector.
Gases purified
Max. operating pressure
Max. operating temperature
Max. flow rate
Impurities removed
Impurities not removed
Helium Purifier
(HP2)
He, Ne, Ar, Kr, Xe, Rn
1000 psig
400°C
1 liter/min
Outlet impurities less than 10 ppb
O, H2, O2, N2, NO, NH3, CO, and
H
2
, based on 10 ppm total inlet
CO
2
impurities. Other impurities
removed include CF
and hydrocarbons such as CH
He, Ne, Ar, Kr, Xe, and Rn
, CCl4, SiH4,
4
4
Outlet impurities less than 10 ppb
H
based on 10 ppm total inlet impurities.
Other impurities removed include
CF
He, Ne, Ar, Kr, Xe, Rn, CH
Nitrogen Purifier
(NP2)
He, Ne, Ar, Kr, Xe, Rn, N
1000 psig
400°C
1 liter/min
O, H2, O2, NO, NH3, CO, and CO2,
2
, CCl4, SiH4, and hydrocarbons
4
WARNING!
This product is
not for use with oxygen
oxygen or gases with a significant proportion of
oxygen. The purifier’s gettering alloy is
at operating temperature
. Use with significant
amounts of oxygen can result in combustion of the
material, potential damage to the surrounding area,
and possible injury.
2
, and N
4
– either pure
pyrophoric
2
In no event shall Valco Instruments Co. Inc. be liable
for any direct, indirect, special, incidental, or consequential damage, whether based on contract, tort,
or any other legal theory and whether advised of the
possibility of such damages.
Introduction
2
Theory of Operation
The purification substrate in the Valco purifiers is a non-evaporable
gettering alloy, with a nominal composition of zirconium, vanadium, and
iron. This alloy must be heated so that the oxide layers on the particle
surface are eliminated. This process must be performed under a vacuum or
in at atmosphere of helium (for the HP2) or nitrogen (for the NP2).
Although the gettering alloy will purify even at ambient temperatures, raising
the temperature vastly improves the life span and efficiency of the alloy.
However, the elevated temperature causes hydrogen generation, which is
trapped only at temperatures below 250°C. Therefore the Valco purifiers
have been designed to operate at a fixed temperature gradient which yields
a long life span and high efficiency and insures that any hydrogen generated will be trapped.
Accurate temperatures at the inlet (380-400°C) and at the outlet (170190°C) are maintained with the use of a precision 24 VDC power supply.
Power Supply Requirements
As stated on the purifier, the power supply must conf orm to EN 61010-1:
Section F.2.1 Limited circuit. This section mandates that the po w er source
must be limited to 42.4 VDC or less (open circuit). In addition, the energy
must be limited by one of the following means:
•the current under any condition of load, including short circuit, is not
more than 8A measured after 1 minute of operation
rated
•the source is
condition of load
•an overload protector or circuit component opens to interrupt the
power output at a lower value than 150 VA under any condition
including short circuit
The power supply is critical for safe and pr oper operation of this unit. It is therefore recommended that the
purifer be used only with the power supply received
with it.
or set to limit its power to 150 VA under any
Installation and Operation
This procedure describes a chromatographic installation. Although that is not
the only possible application, it is the most common. It is up to the user to
determine whether the purifier is suitable for a particular application based
upon the specifications of the purifier.
Installation
The Valco HP2 and NP2 are two part systems comprised of the purifier and
the power supply. The purifier must be installed in a vertical position to
eliminate the possibility of channeling. For best results, do not modify the
fittings or tubing lengths; small particles which might be generated by such
modifications are difficult to remove and can restrict the flow.
1.Connect the input line (tagged INLET) to a carrier gas cylinder with a
high purity regulator. (Save the caps to seal the purifier whenever you
remove it from the system.)
2.Purge the system for 15 to 30 minutes at 20 to 30 mL/min to eliminate
air from the getter material.
3
3.Connect the barrel connector of the power supply to the purifier .
4.Connect the power supply to mains (115/230 VAC). The LED on the
5.Connect the purifier output line to the chromatographic system’s carrier
Activation
When the purifier reaches operating temperature (usually in about 2½
hours) the getter will be activated. Once the getter is activated, active
gaseous impurities such as H
are captured and chemisorbed on the getter surface. Only noble gas atoms
are not affected. Once adsorbed, oxygen, carbon, and nitrogen atoms
cannot be released by the getter material even at its melting point (1400°C),
due to the formation of strong chemical bonds with the alloy atoms.
Hydrogen atoms behave quite diff erently , diffusing into the getter material
bulk more quickly than the other atoms and becoming almost uniformly
distributed within the bulk. Ho w e v er, hydrogen sorption occurs below 250°C,
achiev ed through the temperature gr adient of the trap assembl y.
CAUTION: The getter material should never be heated
when air is present.
power supply should come on to confirm power output.
gas input line using a 1/16" union (Valco Product Number ZU1).
, O2, H2O, CO, and CO2 (plus N2 for the HP2)
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