@vic
Copyright @vic Electronics Corp. Website http://www.avictek.com
MMBT3904LT1
SOT-23 Plastic-Encapsulate Transistors
MMBT3904LT1 TRANSISTOR (NPN)
FEATURES
Power dissipation
P
0.2 W (Tamb=25℃)
CM:
Collector current
I
0.2 A
CM:
Collector-base voltage
V
: 60 V
(BR)CBO
Operating and storage junction temperature range
, T
T
: -55℃ to +150℃
J
stg
SOT-23
1. BASE
2. EMI TTE R
3. COLLECTOR
Unit: mm
0
.
1
2. 4
1. 3
5
9
.
9
9
0
.
.
2
1
5
9
.
0
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
4
.
0
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V
V
V
(BR)CBO
Ic= 1 mA , IB=0 40 V
(BR)CEO
(BR)EBO
V
I
CBO
V
I
CEO
V
I
EBO
H
V
FE(1)
Ic= 100
I
µA, I
=0
E
= 100µA, IC=0
E
= 60V, IE=0 0.1
CB
= 40V, IB=0 0.1
CE
= 5V, IC=0 0.1
EB
=10V, IC= 1mA 100 300
CE
60 V
6 V
µA
µA
µA
DC current gain
H
Collector-emitter saturation voltage
Base-emitter saturation voltag e
Transition frequency
Delay Time
Rise Time
V
FE(2)
(sat) IC=50mA, IB= 5mA 0.3 V
V
CE
(sat) IC= 50mA, IB= 5mA 0.95 V
V
BE
f
T
td
tr
= 1V, IC= 50mA 60
CE
V
= 20V, IC= 10mA
CE
100MHz
f=
VCC=3.0Vdc, VBE=-0.5Vdc
I
=10mAdc, IB1=1.0mAdc
C
250 MHz
35 nS
35 nS
Storage Time
Fall Time
ts
tf
VCC=3.0Vdc, IC=10mAdc
I
=1.0mAdc
B1=IB2
200 nS
50 nS
DEVICE MARKING
MMBT3904LT1=1AM
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