V-Data VDS6608A4A
A
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Synchronous DRAM 2M x 8 Bit x 4 Banks
General Description
The VDS6608A4A are four-bank Synchronous
DRAMs organized as 2,097,152 words x 8 bits x 4
banks.
Synchronous design allows precise cycle control
with the use of system clock I/O transactions are
possible on every clock cycle.
Range of operating frequencies, programmable
burst length and programmable latencies allow the
same device to be useful for a variety of high
bandwidth high performance memory system
applications
Ordering Information.
Part No. Frequency Interface Package
VDS6608A4A-75 133Mhz LVTTL 400mil 54pin TSOPII
Pin Assignment
Features
•JEDEC standard LVTTL 3.3V power supply
•MRS Cycle with address key programs
-CAS Latency (2 & 3)
-Burst Length (1,2,4,8,& full page)
-Burst Type (sequential & Interleave)
•4 banks operation
ll inputs are sampled at the positive edge of
•
the system clock
•Burst Read single write operation
•Auto & Self refresh
•4096 refresh cycle
•DQM for masking
•Package:54-pins 400 mil TSOP-Type II
VDD
DQ0
VDDQ
NC
DQ1
V
SSQ
NC
DQ2
DDQ
V
NC
DQ3
SSQ
V
NC
DD
V
NC
/WE
/CAS
/RAS
/CS
BA0
BA1
10/AP
0
1
2
3
DD
V
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27 28
54-pin plastic TSOP II 400 mil
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
Vss
DQ7
Q
Vss
NC
DQ6
V
DDQ
NC
DQ5
V
SSQ
NC
DQ4
DDQ
V
NC
SS
V
NC/RFU
DQM
CK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
SS
V
Rev 1 April, 2001
1
V-Data VDS6608A4A
Pin Description
PIN NAME FUNCTION
CK System Clock Active on the positive edge to sample all inputs.
CKE Clock Enable Masks system clock to freeze operation from the next clock cycle. CKE
should be enabled at least on cycle prior new command. Disable input
buffers for power down in standby
/CS Chip Select Disables or Enables device operation by masking or enabling all input
except CK, CKE and L(U)DQM
A0~A11 Address Row / Column address are multiplexed on the same pins.
Row address : RA0~RA11
Column address : CA0~CA8
BA0~BA1 Banks Select Selects bank to be activated during row address latch time.
Selects bank for read / write during column address latch time.
DQ0~DQ7 Data Data inputs / outputs are multiplexed on the same pins.
L(U)DQM Data Mask Makes data output Hi-Z,
/RAS Row Address Strobe Latches row addresses on the positive edge of the CLK with /RAS low
/CAS Column Address Strobe Latches Column addresses on the positive edge of the CLK with /CAS low
/WE Write Enable Enables write operation and row recharge.
VDD/VSS Power Supply/Ground Power and Ground for the input buffers and the core logic.
VDDQ/VSSQ Data Output Power/Ground Power supply for output buffers.
NC/RUF No Connection This pin is recommended to be left No Connection on the device.
Block Diagram
CK
CKE
Address
/CS
/RAS
/CAS
/WE
Clock
Generator
Mode
Register
Command Decoder
Control Logic
Address
Buffer
&
Refresh
Counter
Column
Address
Buffer
&
Refresh
Counter
Row Decoder
Amplifier
Column Decoder
Data Control Circuit
Bank3
Bank2
Bank1
Bank0
Data Latch
DQ0~DQn
DQM
DQS
Rev 1 April, 2001
2
V-Data VDS6608A4A
Absolute Maximum Ratings
Parameter Symbol Value Unit
Voltage on any pin relative to Vss VIN, Vout -1.0 ~ 4.6 V
Voltage on VDD supply relative to Vss VDD, VDDQ -1.0 ~ 4.6 V
Storage temperature TSTG -55 ~ +150
Power dissipation PD 1 W
Short circuit current IOS 50 mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
℃
DC Operating Condition
Voltage referenced to Vss = 0V, TA = 0 to 70 ℃
Parameter Symbol Min Typ Max Unit Note
Supply voltage VDD, VDDQ 3.0 3.3 3.6 V
Input logic high voltage VIH 2.0 3.0 VDD+0.3 V 1
Input logic low voltage VIL -0.3 0 0.8 V 2
Output logic high voltage VOH 2.4 - - V IOH=-2mA
Output logic low voltage VOL - - 0.4 V IOL=2mA
Input leakage current IIL -10 - 10 uA 3
Note : 1. VIH (max)=4.6V AC for pulse width ≦ 10ns acceptable.
2.V
3.Any input 0V ≦ V
IL(min)=-1.5V AC for pulse width ≦ 10ns acceptable.
IN ≦ VDD + 0.3V, all other pins are not under test = 0V.
AC Operating Condition
Voltage referenced to Vss = 0V, TA = 0 to 70 ℃
Parameter Symbol Value Unit Note
AC input high / low level voltage VIH / VIL 2.4 / 0.4 V
Input timing measurement reference level voltage Vtrip 1.4 V
Input rise / fall time TR / tF 1 Ns
Output timing measurement reference level Voutfef 1.4 V
Output load capacitance for access time measurement CL 50 pF 2
Note: 1. 3.15V ≦ VDD ≦ 3.6V is applied for VDS6608A4A5.
2. Output load to measure access times is equivalent to two TTL gates and one capacitor (30pF). For details,
refer to AC/DC output load circuit.
Rev 1 April, 2001
3
V-Data VDS6608A4A
A
Capacitance
TA= 25℃, f-=1Mhz, VDD=3.3V
Parameter Pin Symbol Min Max Unit
CLK Cl1 2.5 4 pF Input capacitance
A0~A11,BA0,BA1,CKE,/CS,/RAS,
/CAS,/WE,DQM
Data input / output capacitance DQM CI/O 4 6.5 pF
Cl2 2.5 5 pF
Output load circuit
3.3 V
1200 ohms
Output
870 ohms50 pF
VOH(DC) = 2.4V,IOH= -2m
VOL(DC) = 0.4V,IOL= 2mA
DC Characteristics I
Parameter Symbol Min Max Unit Note
Input leakage current ILI -1 1 uA 1
Output leakage current ILO -1 1 uA 2
Output high voltage VOH 2.4 - V IOH = -4mA
Output low voltage VOL - 0.4 V IOL = 4mA
Note : 1.VIN = 0 TO 3.6V, All other pins are not tested under VIN = 0V.
2.D
OUT is disabled, VOUT = 0 to 3.6.
Rev 1 April, 2001
4
V-Data VDS6608A4A
DC Characteristics II
Parameter Symbol Test condition
Speed
Unit Note
-7.5
Operating Current IDD1
Precharge standby
current in power
down mode
Precharge standby
current in Non power
down mode
Active standby
current in power
down mode
IDD2P
IDD2PS
IDD2N
IDD2NS
IDD3P
IDD3PS
Burst length=1, One bank active
tRC≧tRC(min),I
CKE≦V
CKE≦V
CKE≧V
tCK=min input signals are
changed one time during 2clks.
All other pins ≧VDD-0.2V or ≦
0.2V
CKE≧V
Input signals are stable.
CKE≦V
CKE≦V
CKE≧V
OL=0mA
IL(max), tCK=min
IL(max), tCK=∞
IH(min), /CS≧VIH(min),
IH(min), tCK=∞
IL(max), tCK=min
IL(max), tCK=∞
IH(min), /CS≧VIH(min),
75 mA 1
1
mA
1
15
mA
6
3
mA
3
tCK=min input signals are
Active standby
current in Non power
down mode
Burst mode
operating current
Auto refresh current IDD5
Self refresh current IDD6
Note: 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output
open.
2. Min. of tRRC is shown at AC characteristics.
IDD3N
IDD3NS
IDD4
changed one time during 2clks.
All other pins ≧VDD-0.2V or ≦
0.2V
CKE≧V
Input signals are stable.
t
All banks active
tRRC≧tRRC(min), All banks
active
CKE≦0.2V
IH(min), tCK=∞
CK≧tCK(min),IOL=0 mA
30
mA
25
115 mA 1
135 mA 2
1 mA
Rev 1 April, 2001
5
V-Data VDS6608A4A
AC Characteristics
Parameter Symbol
/CAS Latency = 3 tCK3 7.5System clock
Cycle time
Clock high pulse width tCHW 2.5 - ns 1
Clock low pulse width tCLW 2.5 - ns 1
form clock
time
/RAS to /CAS delay tRCD 20 - ns
/RAS active time tRAS 45 100 ns
/RAS precharge time tRP 20 - ns
/RAS to /RAS bank active delay tRRD 15 - ns
/CAS to /CAS delay tCCD 1 - CLK
Data – in active command tDAL 4 - CLK
/CAS Latency = 2 tCK2 10
/CAS Latency = 3 tAC3 - 5.4Access time
/CAS Latency = 2 tAC2 - 6
Operation tRC 65 - /RAS cycle
Auto Refresh tRRC 65 -
-7.5
Unit Note
Min Max
1000 ns
ns 2
ns
Data – out hold time tOH 3 - ns
Address setup time tAS 1.5 - ns 1
Address hold time tAH 1 - ns 1
CKE setup time tCKS 1.5 - ns 1
CKE hold time tCKH 1 - ns 1
Command setup time tCS 1.5 - ns 1
Command hold time tCH 1 - ns 1
CLK to data output in low Z-time tOLZ 1.5 - ns
MRS to new command tMRD 1 - CLK
Power down exit time tPDE 1 - CLK
Self refresh exit time tSRE 1 - CLK 3
Refresh time tREF 64 - ms
Note : 1. Assume tR / tF (input rise and fall time) is 1 ns.
2. Access times to be measured with input signals of 1v / ns edge rate.
3.A new command can be given tRRC after self refresh exit.
Rev 1 April, 2001
6
V-Data VDS6608A4A
Command Truth-Table
Command CKEn-1 CKEn /CS /RAS /CAS /WE DQM ADDR A10/AP BA
Mode Register Set H X L L L L X OP code
No Operation H X
Bank Active H X L L H H X RA V
Read L
H X L H L H X CA
Read with Auto Precharge
Write L
H X L H L L X CA
Write with Auto Precharge
Precharge All Bank H X
H X L L H L X X
Precharge select Bank
Burst Stop H X L H H L X X
DQM H X V X
Auto Refresh H H L L L H X X
Entry H L L L L H X
Self Refresh
Exit L H
Entry H L
Precharge
Power down
Exit L H
H X X X
L H H H
L H H H
H X X X
H X X X
L H H H
H X X X
L V V V
X X
V
H
V
H
L V
X
X
X
X
X
Clock Suspend
Rev 1 April, 2001
Entry H L
Exit L H X X
H X X X
X
L V V V
7
X
V-Data VDS6608A4A
Package Information
SYMBOL
A 1.20 0.047
A1 0.05 0.10 0.15 0.002 0.004 0.006
A2 0.95 1.00 1.05 0.037 0.039 0.041
B 0.30 0.35 0.45 0.012 0.014 0.018
c 0.12 0.21 0.005 0.008
D 22.22 BSC 0.875 BSC
HE 11.56 11.76 11.96 0.460 0.463 0.470
E 10.03 10.16 10.29 0.390 0.400 0.410
e 0.80 BSC 0.031
L 0.40 0.50 0.60 0.016 0.020 0.024
L1 0.80 REF 0.031 REF
MIN. NOM. MAX. MIN. NOM. MAX.
S
θ
0 ° - 8 ° 0 ° - 8 °
MILLIMETER INCH
0.71 REF 0.028 REF
400mil 54pin TSOP II Package
Rev 1 April, 2001
8
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