V3 Semiconductor V292BMC-33LP, V292BMC-40LP Datasheet

V292BMC Rev. D
HIGH PERFORMANCE BURST
DRAM CONTROLLER
FOR Am29030/40 PROCESSORS
• Pin/Software compatible with earlier V292BMC.
• Direct interfaces to Am29030/40 processors.
• 3.3V DRAM interface support.
• Near SRAM performance achieved with DRAM.
• Supports up to 512Mb of DRAM.
• Interleaved or non-interleaved operation.
• Supports symmetric and non-symmetric arrays. The V292BMC Revision D Burst DRAM
Controller is an enhanced version of the previous V292BMC with improved timing and provides dedicated Power and Ground rails to support the increasingly popular 3.3V DRAM modules. Timing parameters are also improved over the older versions of the device.
The V292BMC provides the DRAM access protocols, buffer signals, data multiplexer signals, and bus timing resources required to work with DRAM. By using the V2926BMC, system designers can replace tedious design work, expensive FPGAs and valuable board space with a single, high-performance, easily configured device. The processor interface of the V292BMC implements the bus protocol of the Am29030/40. The pin naming convention has been duplicated on the V292BMC; simply wire like-named pins together to create the interface.
The V292BMC supports a total DRAM memory subsystem size of 512Mbytes. The array may be
• Software-configured operational parameters.
• Integrated Page Cache Management.
• 2Kbyte burst transaction support.
• On chip memory address multiplexer/drivers.
• Two 24-bit timers, 8-bit bus watch timer.
• Up to 40MHz operation.
• Low cost 132-pin PQFP package. organized as 1 or 2 leafs of 32-bits each.
Standard memory sizes of 256Kbit to 64Mbit devices are supported and 8, 16, and 32-bit accesses are allowed. The V292BMC takes advantage of Fast Page Mode or EDO DRAMs and row comparison logic to achieve static RAM performance using dynamic RAMs. Control signals required for optional external data path buffers/latches are also provided by the V292BMC. The V292BMC provides an 8-bit bus watch timer to detect and recover from accesses to unpopulated memory regions.Two 24-bit counters/timers can supply an external interrupt signal at a constant frequency relative to the system clock. The V292BMC is packaged in a low-cost 132-pin PQFP package and is available in 25, 33, or 40MHz versions.
This document contains the product codes, pinouts, package mechanical information, DC characteristics, and AC characteristics for the V292BMC. Detailed functional information is contained in the User’s Manual.
V292BMC
Am29030/40
MEMORY
CONTROL
D R A M
ROM
TYPICAL APPLICATION
VxxxEPC
LOCAL TO
PCI BRIDGE
Copyright © 1998, V3 Semiconductor Corp. V292BMC Data Sheet Rev 3.2X 1
V3 Semiconductor reserves the right to change the specifications of this product without notice. V292BMC is trademark of V3 Semiconductor. All other trademarks are the property of their respective owners.
PCI
PERIPHERAL
PCI SLOT or EDGE CONNECTOR
V292BMC Rev.D
V3 Semiconductor retains the rights to change documentation, specifications, or device functionality at any time without notice. Please verify that you have the latest copy of all documents before finalizing a design.
1.0 Product Codes
Table 1: Pin Types
Product Code Processor Bus Type Package Frequency
V292BMC-33LP Am29030/35/40 32-bit demultiplexed 132-pin PQFP 33MHz V292BMC-40LP Am29030/35/40 32-bit demultiplexed 132-pin PQFP 40MHz
2.0 Pin Description and Pinout
Table 2 below lists the pin types found on the V292BMC. Table 3 describes the function of each pin on the V292BMC. Table 4 lists the pins by pin number. Figure 1 shows the pinout for the 132-pin PQFP package and Figure 2 shows the mechanical dimensions of the package.
Table 2: Pin Types
Pin Type Description
I/O
12
I TTL input only pin
O
12
O
12-3
TTL I/O pin with 12 mA output drive
TTL Output pin with 12 mA output drive TTL Output pin with 12 mA output drive that can be
configured for either 5 volt or 3.3 volt signaling, These outputs can be configured for 3.3V operation by connecting the Vcc3 power pins to a 3.3V power plane (Vcc should always be connected to a 5V supply). Vcc3 can also be connected to the 5V plane if 5V signaling is desired.
2 V292BMC Rev D Data Sheet Rev 3.2 Copyright © 1998, V3 Semiconductor Inc.
Table 3: Signal Descriptions
Memory Interface Signals
V292BMC Rev.D
Signal Type
AA[11:0] AB[11:0]
RASA[3:0] RASB[3:0]
CASA[3:0] CASB[3:0]
MWEA MWEB
RFS/AUXT
a
R
Description
Leaf A and B row and column address, multiplexed on the same
O
12-3
X
pins. When non-interleaved operation is selected, only address bus AA should be used.
Row Address Strobe. These strobes indicate the presence of a valid
O
12-3
H
row address on busses AA(B)[11:0]. These signals are to be con­nected one to each 32-bit leaf of memory.
O
12-3
O
12-3
Column Address Strobe. These strobes latch a column address from
H
AA(B)[11:0]. They are assigned one to each byte in a leaf. Memory Write Enable. These are the DRAM write strobes. One is
H
supplied for each leaf to minimize signal loading. Refresh in progress. This output is multi-function signal. The signal
name, as it appears on the logic symbol, is the default signal names.
O
12
H
This signal gives notice that a refresh cycle is to be executed. The timing leads RAS only refresh by one cycle. The output may also function as AUX timer interrupt.
Configuration
Signal Type R Description
MOD4 I Selects Modulo 4 (word) bursting for multiplexed address AA(B).
Buffer Controls Signals
Signal Type R Description
Data Transmit A and B. These outputs are multi-function signals.
The signal names, as they appear on the logic symbol, are the TXA TXB
O
12
default signal names (Mode 0). The purpose of these outputs is to
H
control buffer output enables during data read transactions and, in
effect, control the multiplexing of data from each memory leaf onto
the Am29030/40 data bus.
These outputs are mode independent, however, the timing of the
signals change for different operational modes. They control trans­LEA LEB
O
12
parent latches that hold data transmitted during a write transaction.
L
In modes 0 and 1, the latch controls follow the timing of CAS for
each leaf, while in modes 2 and 3 the timing of LEA and LEB is
shortened to 1/2 clock.
Local Bus Interface
Copyright © 1998, V3 Semiconductor Corp. V292BMC Rev D Data Sheet Rev 3.2 3
V292BMC Rev.D
Table 3: Signal Descriptions (cont’d)
Signal Type R Description
A[31:2] I Local address bus.
Address Latch Enable: controls a set of transparent latches on the
address bus. When asserted high, the address input flows through ALE I
I/D I Data/Code.
BWE[3:0] I Local bus byte write enables.
R/W I Read/write.
the latch. When ALE is low, the internal address holds the previous
value. With an Am29030/40 processor ALE is not typically used and
has an internal pull-up resistor that will keep it high when not con-
nected (to provide backward pin compatibility with earlier versions).
REQ RDY
I
O
12
Asserted low to indicate the beginning of a bus cycle.
Z Local bus data ready.
PRDY I Processor ready
SUP/US I
Indicates supervisor mode. Required for access to configuration reg-
isters.
BURST I Burst request.
ERR
O
H Bus Time-out error.
12
Local interrupt request. This signal is asserted when the 24-bit
INT
O
12
H
counter reaches terminal count, and interrupt out is enabled. May
be programmed for pulse or level operation.
RESET I Local bus reset signal.
MEMCLK I Local bus clock.
ID[2:0] I These inputs select the address offset of the configuration registers.
Power and Ground Signals
Signal Type R Description
Vcc - POWER leads intended for external connection to a 5V Vcc plane Vcc3 - POWER for DRAM control outputs. Can be connected to 3.3V or 5V. GND - GROUND leads intended for external connection to a GND plane.
a. R indicates state during reset.
4 V292BMC Rev D Data Sheet Rev 3.2 Copyright © 1998, V3 Semiconductor Inc.
V292BMC Rev.D
Table 4: Pin Assignments
PIN # Signal PIN # Signal PIN # Signal PIN # Signal
1 A14 34 REQ 67 AA10 100 AB9 2 A15 35 BWE2 68 AA11 101 AB10 3 A16 36 BWE3 69 Vcc3 102 AB11 4 Vcc 37 GND 70 GND 103 Vcc3 5 A17 38 RDY 71 CASA0 104 GND 6 A19 39 ID0 72 CASA1 105 CASB0 7 A20 40 ID1 73 CASA2 106 CASB1 8 A18 41 ID2 74 CASA3 107 CASB2
9 A21 42 RFS/AUXT 75 Vcc3 108 CASB3 10 A24 43 LEA 76 GND 109 Vcc3 11 A22 44 LEB 77 RASA0 110 GND 12 A23 45 TXA 78 RASA1 111 RASB0 13 A26 46 TXB 79 RASA2 112 RASB1 14 A25 47 Vcc 80 RASA3 113 RASB2 15 A27 48 GND 81 Vcc3 114 RASB3 16 ALE 49 - 82 MWEA 115 Vcc 17 - 50 - 83 - 116 ­18 - 51 - 84 - 117 MOD4 19 A31 52 - 85 - 118 MWEB 20 A28 53 AA0 86 GND 119 GND 21 A29 54 AA1 87 AB0 120 RESET 22 A30 55 AA2 88 AB1 121 A2 23 I/D 56 AA3 89 AB2 122 A3 24 SUP/US 57 Vcc3 90 AB3 123 A4 25 MEMCLK 58 GND 91 Vcc3 124 A5 26 INT 59 AA4 92 GND 125 A6 27 ERR 60 AA5 93 AB4 126 A7
Copyright © 1998, V3 Semiconductor Corp. V292BMC Rev D Data Sheet Rev 3.2 5
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