UTRON UT62L25616MC-70LLI, UT62L25616MC-70LI, UT62L25616MC-55LLI, UT62L25616MC-55LI, UT62L25616BS-70LLI Datasheet

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A

A0 A1 A2 A3 A4 A8 A

A

Rev. 1.1

UTRON

FEATURES

Fast access time : 55/70/100 ns

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CMOS Low operating power

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Operating current: 45/35/25mA (Icc max)

Standby current: 20 uA(TYP.) L-version

3 uA(TYP.) LL-version

Single 2.7V~3.6V power supply

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Operating temperature:

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Industrial : -40℃~85℃ All inputs and outputs TTL compatible

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Fully static operation

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Three state outputs

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Data retention voltage: 1.5V (min)

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Data byte control :

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Package : 44-pin 400mil TSOPⅡ

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48-pin 6mm × 8mm TFBGA

LB

UB

(I/O1~I/O8)

(I/O9~I/O16)

FUNCTIONAL BLOCK DIAGRAM

.

MEMORY ARRAY

2048 Rows x 128 Columns x 16 bits

.

. .

COLUMN I/O

COLUMN DECODER

13

14

15

16

17

I/O1

.

I/O16

CE

WE

OE

DECODER

. . .

CONTROL

ROW

I/O

LOGIC

.

. . .

VCC

VSS

UT62L25616(I)

256K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION

The UT62L25616(I) is a 4,194,304-bit low power CMOS static random access memory organized as 262,144 words by 16 bits.

The UT62L25616(I) operates from a single 2.7V ~

3.6V power supply and all inputs and outputs are fully TTL compatible.

The UT62L25616(I) is designed for low power system applications. It is particularly suited for use in high-density high-speed system applications.

PIN DESCRIPTION

SYMBOL DESCRIPTION

A0 - A17 Address Inputs I/O1 - I/O16 Data Inputs/Outputs

CE

WE

OE

LB

UB VCC Power Supply VSS Ground NC No Connection

Chip Enable Input

Write Enable Input

Output Enable Input

Lower-Byte Control

High-Byte Control

LB

UB

A9

10 A11

12

5

A7

6

UTRON TECHNOLOGY INC. P80054 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919

1



UTRON

Rev. 1.1

PIN CONFIGURATION

A4 A3

A2

A1

A0

CE

I/O1

I/O2

I/O3

I/O4

Vcc

Vss I/O5

I/O6

I/O7

I/O8

WE

A17

A16 A15

A14

A13

1

2 3

4

5 6

7

8

9

10 11

12

13

14

15

16 17

18

19 20

21

22 23

UT62L25616(I)

TSOP II

TRUTH TABLE

MODE

Output Disable Read L

Write L

Note: H = VIH, L=VIL, X = Don't care.

CE

OE

H X X X X High – Z High – Z ISB, I X X X H H High – Z High – Z I L L

H X

L L L

L

X L L

X

256K X 16 BIT LOW POWER CMOS SRAM

A5

44

A6

43 42

A7

41

OE

40

UB

39

LB

I/O16

38

I/O15

37

I/O14

36

35

I/O13

Vss

34

Vcc

33

I/O12

32

I/O11

31

30

I/O10

29

I/O9

28

NC

A8

27

A9

26

A10

25

A11

24

A12

WE

LB

UB

H X H H H

L L L

X H L H L L H L

X H H L L H L L

A

B

C

D

E

F

G

H

LB

I/O9

Vss

Vcc

I/O15 I/O14

I/O16

NC

123456

I/O OPERATION

I/O1-I/O8 I/O9-I/O16

High – Z High – Z

D

OUT

High – Z High – Z High – Z

High – Z

D

OUT

DIN

High – Z

D

IN

UT62L25616(I)

OE

UB

I/O11I/O10

I/O12

I/O13

NC

A8

D D

D DIN

OUT

IN

A1

A0

A3

A4

A5

A6

A7

NC

A16 I/O5

A14

A15 I/O6

A12

A13

A9

A10

TFBGA

SUPPLY CURRENT

NC

A2

I/O1

CE

I/O3I/O2

Vcc

I/O4A17

Vss

I/O7

I/O8

WE

NC

A11

Standby

SB1

, I

SB

SB1

ICC,I

CC1,ICC2

I

CC,ICC1,ICC2

I

CC,ICC1,ICC2

UTRON TECHNOLOGY INC. P80054 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919

2



Rev. 1.1

UTRON

ABSOLUTE MAXIMUM RATINGS

256K X 16 BIT LOW POWER CMOS SRAM

*

UT62L25616(I)

PARAMETER SYMBOL RATING UNIT

Terminal Voltage with Respect to VSS V Operating Temperature Industrial T

Storage Temperature T

-0.5 to 4.6 V

TERM

A

-65 to +150

STG

-40 to 85

℃ ℃

Power Dissipation PD 1 W DC Output Current I Soldering Temperature (under 10 secs) Tsolder 260

*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.

50 mA

OUT

℃

DC ELECTRICAL CHARACTERISTICS

(V

= 2.7V~3.6V, TA = -40℃ to 85℃(I))

CC

PARAMETER

SYMBOL

Power Voltage VCC 2.7 3.0 3.6 V Input High Voltage VIH 2.0 - VCC+0.3 V Input Low Voltage VIL -0.2 - 0.6 V Input Leakage Current ILI

Output Leakage Current ILO

Output High Voltage VOH IOH= -1mA 2.2 - - V Output Low Voltage VOL IOL= 2.1mA - - 0.4 V Operating Power

ICC Cycle time=min, 100%duty,

Supply Current

Average Operation

Icc1

Current

Icc2 Cycle time=500ns,100%duty,I/O=0mA,

Standby Current (TTL) ISB

Standby Current (CMOS) -L - 20 80

I

SB1

TEST CONDITION MIN. TYP. MAX. UNIT

V

≦VIN ≦VCC

SS

V

≦V

SS

I/O

≦V

Output Disabled

CC;

- 1 - 1

55 - 30 45 mA

I/O=0mA,

CE

=V

;

IL

70 - 25 35 mA

100 - 20 25 mA

Cycle time=1µs,100%duty,I/O=0mA,

≦

0.2V,other pins at 0.2V or Vcc-0.2V,

CE

- 4 5 mA

- 8 10 mA

≦

0.2V,other pins at 0.2V or Vcc-0.2V,

CE

=V

CE

other pins =VIL or VIH,

IH,

=V

-0.2V,

CC

other pins at 0.2V or Vcc-0.2V,

- 0.3 0.5 mA

-LL - 3 25

A

µ

A

µ

A

µ

A

µ

UTRON TECHNOLOGY INC. P80054 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919

3



UTRON

Rev. 1.1

CAPACITANCE

(TA=25

256K X 16 BIT LOW POWER CMOS SRAM

℃

, f=1.0MHz)

UT62L25616(I)

PARAMETER SYMBOL MIN. MAX UNIT

Input Capacitance C Input/Output Capacitance C

Note : These parameters are guaranteed by device characterization, but not production tested.

IN

I/O

-

6 pF 8 pF

AC TEST CONDITIONS

Input Pulse Levels 0V to 3.0V Input Rise and Fall Times 5ns Input and Output Timing Reference Levels 1.5V Output Load CL = 30pF, IOH/IOL = -1mA / 2.1mA

AC ELECTRICAL CHARACTERISTICS

(VCC =2.7V~3.6V, TA = -40℃ to 85℃(I))

(1) READ CYCLE

PARAMETER

Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z Output Hold from Address Change

,UB

LB

Access Time

,UB

to High-Z Output

,UB

to Low-Z Output

SYMBOL UT62L25616(I)-55 UT62L25616(I)-70 UT62L25616(I)-100 UNIT

MIN. MAX. MIN. MAX. MIN. MAX.

tRC 55 - 70 - 100 - ns tAA - 55 - 70 - 100 ns t

- 55 - 70 - 100 ns

ACE

tOE - 30 - 35 - 50 ns t

10 - 10 - 10 - ns

CLZ*

t

5 - 5 - 5 - ns

OLZ*

t

- 20 - 25 - 30 ns

CHZ*

t

- 20 - 25 - 30 ns

OHZ*

tOH 5 - 5 - 5 - ns tBA - 55 - 70 - 100 ns

t

- 25 - 30 - 40 ns

HZB

t

0 - 0 - 0 - ns

LZB

(2) WRITE CYCLE

PARAMETER

Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High Z

,UB

LB

*These parameters are guaranteed by device characterization, but not production tested.

Valid to End of Write

SYMBOL UT62L25616(I)-55 UT62L25616(I)-70 UT62L25616(I)-100 UNIT

MIN. MAX. MIN. MAX. MIN. MAX.

tWC 55 - 70 - 100 - ns tAW 50 - 60 - 80 - ns tCW 50 - 60 - 80 - ns tAS 0 - 0 - 0 - ns tWP 45 - 55 - 70 - ns tWR 0 - 0 - 0 - ns tDW 25 - 30 - 40 - ns tDH 0 - 0 - 0 - ns t

5 - 5 - 5 - ns

OW*

t

- 30 - 30 - 40 ns

WHZ*

tBW 45 - 60 - 80 - ns

UTRON TECHNOLOGY INC. P80054 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919

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