UTC UNISONIC TECHNOLOGIES SD 669 Datasheet

UNISONIC TECHNOLOGIES CO., LTD

2SD669/A

BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR

APPLICATIONS



* Low frequency power amplifier complementary pair with

UTC 2SB649/A

NPN SILICON TRANSISTOR

1

1

SOT-223

1

TO-92

1

1

1

SOT-89

TO-92NL

TO-126C

TO-126

1

1

*Pb-free plating product number:

2SD669L/2SD669AL

 ORDERING INFORMATION

Order Number Pin Assignment

Normal Lead Free Plating
2SD669-x-AA3-R 2SD669L-x-AA3-R SOT-223 B C E Tape Reel
2SD669-x-AB3-R 2SD669L-x-AB3-R SOT-89 B C E Tape Reel

2SD669-x-T60-K 2SD669L-x-T60-K TO-126 E C B Bulk

2SD669-x-T6C-R 2SD669L-x-T6C-R TO-126C E C B Bulk

2SD669-x-T92-B 2SD669L-x-T92-B TO-92 E C B Tape Box

2SD669-x-T92-K 2SD669L-x-T92-K TO-92 E C B Bulk
2SD669-x-T9N-B 2SD669L-x-T9N-B TO-92NL E C B Tape Box
2SD669-x-T9N-K 2SD669L-x-T9N-K TO-92NL E C B Bulk
2SD669-x-T9N-R 2SD669L-x-T9N-R TO-92NL E C B Tape Reel
2SD669-x-TM3-T 2SD669L-x-TM3-T TO-251 E C B Tube
2SD669-x-TN3-R 2SD669L-x-TN3-R TO-252 B C E Tape Reel
2SD669-x-TN3-T 2SD669L-x-TN3-T TO-252 B C E Tube

Package

1 2 3

Packing

TO-251

TO-252

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QW-R204-005,E

2SD669/A

 ORDERING INFORMATION(Cont.)

NPN SILICON TRANSISTOR

Order Number Pin Assignment

Normal Lead Free Plating
2SD669A-x-AA3-R 2SD669AL-x-AA3-R SOT-223 B C E Tape Reel
2SD669A-x-AB3-R 2SD669AL-x-AB3-R SOT-89 B C E Tape Reel

2SD669A-x-T60-K 2SD669AL-x-T60-K TO-126 E C B Bulk

2SD669A-x-T6C-R 2SD669AL-x-T6C-R TO-126C E C B Bulk

2SD669A-x-T92-B 2SD669AL-x-T92-B TO-92 E C B Tape Box

2SD669A-x-T92-K 2SD669AL-x-T92-K TO-92 E C B Bulk
2SD669A-x-T9N-B 2SD669AL-x-T9N-B TO-92NL E C B Tape Box
2SD669A-x-T9N-K 2SD669AL-x-T9N-K TO-92NL E C B Bulk
2SD669A-x-T9N-R 2SD669AL-x-T9N-R TO-92NL E C B Tape Reel
2SD669A-x-TM3-T 2SD669AL-x-TM3-T TO-251 E C B Tube

2SD669A-x-TN3-R 2SD669AL-x-TN3-R TO-252 B C E Tape Reel
2SD669A-x-TN3-T 2SD669AL-x-TN3-T TO-252 B C E Tube

2SD669L-x-AB3-R

(1)P ac king T ype
(2)P ac kage T ype
(3)Rank
(4)Lead Plating

Package

(1 ) K: Bul k, R: Tape Re el, T: Tube
(2) AA3: SOT-2 23, AB3: SOT-89, T60: TO-126,

T 6 C: TO -1 2 6C, TM3: TO-2 5 1, TN3 : TO-2 5 2,
T92:TO-92, T9N: TO-92NL

(3) x: refer to Classification of h
(4) L: Lead F r ee Plating, Blank: Pb/ S n

1 2 3

Packing

FE1

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

QW-R204-005,E

2 of 5

2SD669/A

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATING (Ta=

25℃,

unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT

Collector-Base Voltage V
Collector-Emitter Voltage

2SD669 120
2SD669A

Emitter-Base Voltage V

180 V

CBO

V

CEO

5 V

EBO

160

V

Collector Current IC 1.5 A
Collector Peak Current l
Collector Power Dissipation SOT-223 0.5 W
Collector Power Dissipation TO-126

C(PEAK)

P

D

3 A

1 W
Junction Temperature TJ +150 ℃
Storage Temperature T

-40 ~ +150

STG

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS

(Ta=25℃, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

Collector to Base Breakdown Voltage BV

Voltage

2SD669 120 Collector to Emitter Breakdown
2SD669A

BV

Emitter to Base Breakdown Voltage BV
Collector Cut-off Current I

DC Current Gain
Collector-Emitter Saturation Voltage V

CE(SAT)IC

h
h

CBO

FE1
FE2

=1mA, IE=0 180 V

CBOIC

=10mA, RBE=∞

CEOIC

=1mA, IC=0 5 V

EBOIE

160

VCB=160V, IE=0 10
VCE=5V, IC=150mA (Note) 60 320
VCE=5V, IC=500mA (Note) 30

V

µ

A

=600mA, IB=50mA (Note) 1 V
Base-Emitter Voltage VBE VCE=5V, IC=150mA (Note) 1.5 V
Current Gain Bandwidth Product fT VCE=5V, IC=150mA (Note) 140 MHz
Output Capacitance Cob VCB=10V, IE=0, f=1MHz 14 pF
Note: Pulse test.

CLASSIFICATION OF h



RANK B C D

RANGE 60-120 100-200 160-320

FE1

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

QW-R204-005,E

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2SD669/A

 TYPICAL CHARACTERISTICS

DC Current T r ans fer Ratio

vs. Collector Current

FE

300

250

200

150

℃

5

7

=

a

T

5

2

0

2

-

NPN SILICON TRANSISTOR

Collector to Emitter Saturation Voltage

1.2
IC=10 I

1.0

0.8

(V)

CE(SAT)

0.6

vs. Collector Current

B

DC Current Transfer Ratio, h

(V)

BE(SAT)

Voltage, V

Base to Emitter Saturation

(pF)

ob

C ollector Outp ut Capacitanc e, C

100

VCE=5V

50

1

1 3 10 30 100 300 1,000 3,000

Collector Current , I

C

(mA)

Base to Emitter Saturation Voltage

1.2

1.0

0.8

0.6

vs. Coll ector Curren t

IC=10I

B

=

T

C

5

2

7

℃

0

2

-

5

0.4

0.2

0

1 3 10 30 100 300 1,000

Collector Current, I

C

(mA)

Collector Out put Capac itanc e

vs. Coll ector to Base Voltage

200

f=1MHz

100

=0

I

E

50

20
10

5

2

1 5 10 5020 1002

Collector to Base Voltage, V

CB

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

(V)

0.4

voltage, V

0.2

Collector to emitter saturation

0

1 3 10 30 100 300 1,000

Collector Current , I

℃

5

7

=

C

T

(mA)

C

Gain Bandwidt h P r oduct

vs. Coll ector Curren t

240

VCE=5V
Ta=25℃

200

(MHz)

T

160

120

80

40

Ga in Ba n dwidth Produc t , f

0

10 30 100 300 1,000

Collector Current, I

C

(mA)

Area of Safe Operation

3

(13.3V , 1 . 5 A )

(A)

1.0

C

40V, 0.5A

0.3
DC Operation ( TC=25℃)

0.1

Collector Current, I

0.03

(120V, 0.04A)

(160 V , 0. 02A )

2SD669A

2SD669

0.01
100 300

CE

1310

30

Collector to Emitter Voltage, V

QW-R204-005,E

2

2

-

(V)

5

0

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2SD669/A



TYPICAL CHARACTERISTICS(Cont.)

Ty pic al Trans fer Char ac teris tics

500

VCE=5V

200
100

(mA)

C

50

℃

5

20
10

5

Col lec tor Current, I

2
1

0 0.2 0.4 0.6 0.8 1.0

Base to Emitter Voltage , VBE(V)

7

=

a

T

0

5

2

-

2

NPN SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malf unction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believ ed to be accurate
and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

QW-R204-005,E

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