UNISONIC TECHNOLOGIES CO., LTD
2SB649/A
PNP SILICON TRANSISTOR
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
APPLICATIONS
Low frequency power amplifier complementary pair with UTC
*
2SD669/A
1
1
1
1
SOT-223
TO-252
TO-92NL
TO-126C
1
SOT-89
1
TO-92
1
TO-126
ORDERING INFORMATION
Ordering Number
Lead Free Halogen Free 1 2 3
2SB649xL-x-AA3-R 2SB649xG-x-AA3-R SOT-223 B C E Tape Reel
2SB649xL-x-AB3-R 2SB649xG-x-AB3-R SOT-89 B C E Tape Reel
2SB649xL-x-T6C-K 2SB649xG-x-T6C-K TO-126C E C B Bulk
2SB649xL-x-T60-K 2SB649xG-x-T60-K TO-126 E C B Bulk
2SB649xL-x-T92-B 2SB649xG-x-T92-B TO-92 E C B Tape Box
2SB649xL-x-T92-K 2SB649xG-x-T92-K TO-92 E C B Bulk
2SB649xL-x-T92-R 2SB649xG-x-T92-R TO-92 E C B Tape Reel
2SB649xL-x-T9N-B 2SB649xG-x-T9N-B TO-92NL E C B Tape Box
2SB649xL-x-T9N-K 2SB649xG-x-T9N-K TO-92NL E C B Bulk
2SB649xL-x-TN3-R 2SB649xG-x-TN3-R TO-252 B C E Tape Reel
Package
Pin Assignment
Packing
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Copyright © 2013 Unisonic Technologies Co., Ltd QW-R204-006,I
2SB649/A PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (T
=25°C, unless otherwise specified)
A
PARAMETER SYMBOL RATING UNIT
Collector-Base Voltage V
Collector-Emitter Voltage
2SB649
2SB649A -160 V
Emitter-Base Voltage V
-180 V
CBO
V
CEO
-5 V
EBO
-120 V
Collector Current IC -1.5 A
Collector Peak Current l
SOT-89
-3 A
C(PEAK)
0.5 W
SOT-223 1 W
Power Dissipation
TO-92/TO-92NL 0.6 W
TO-126 1 W
PD
TO-126C 1.3
TO-252 2 W
Junction Temperature TJ +150 °C
Storage Temperature T
-40 ~ +150 °C
STG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Case
SOT-89
SOT-223 15
TO-92/ TO-92NL 80
TO-126
θJC
TO-126C
TO-252
38
6.25
10
4.5
°C/W
ELECTRICAL CHARACTERISTICS (T
=25°C, unless otherwise specified)
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector to Base Breakdown Voltage BV
Collector to Emitter Breakdown
Voltage
2SB649
2SB649A -160
BV
Emitter to Base Breakdown Voltage BV
Collector Cut-off Current I
2SB649
DC Current Gain
2SB649A
Collector-Emitter Saturation Voltage V
CE(SAT)IC
h
h
h
h
CBO
FE1
FE2
FE1
FE2
=-1mA, IE=0 -180 V
CBOIC
=-10mA, RBE=∞
CEOIC
=-1mA, IC=0 -5 V
EBOIE
-120
V
VCB=-160V, IE=0 -10 μA
VCE=-5V, IC=-150mA (note) 60 320
VCE=-5V, IC=-500mA (note) 30
VCE=-5V, IC=-150mA (note) 60 200
VCE=-5V, IC=-500mA (note) 30
=-600mA, IB=-50mA -1 V
Base-Emitter Voltage VBE VCE=-5V, IC=-150mA -1.5 V
Current Gain Bandwidth Product fT VCE=-5V,IC=-150mA 140 MHz
Output Capacitance Cob VCB=-10V, IE=0, f=1MHz 27 pF
Note: Pulse test.
CLASSIFICATION OF h
FE1
RANK
RANGE
B C D
2SB649 60-120 100-200 160-320
2SB649A 60-120 100-200 -
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2SB649/A PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Typical Output Characteristecs
(A)
C
1.0
0.8
0.6
5.5
-
0
.
5
-
5
.
4
-
0
.
4
5
.
3
0
.
3
-
-
P
5
D
.
2
=20W
-2.0
-1.5
0.4
Collector Current, I
0.2
-1.0
-0.5mA
IB=0
TC=25°С
0 -10 -20 -30 -40 -50
Collector to Emitter Voltage, V
DC Current Transfer Ratio vs.
Collector Current
С
°
5
7
=
a
T
С
°
5
2
FE
350
VCE=-5V
300
250
200
С
°
5
2
150
-
100
50
DC Current Transfer Ratio, h
1
-1 -10 -100 -1,000
Collector Current, I
C
(mA)
CE
(V)
-500
-100
(mA)
C
Collector Current, I
-1.2
-1.0
(V)
-0.8
CE(SAT)
-0.6
-0.4
Voltage, V
-0.2
Collector to Emitter Saturation
Typical Transfer Characteristics
VCE=-5V
С
°
-10
5
7
=
a
T
С
°
С
°
5
5
2
-
2
-1
0 -0.2 -0.4 -0.6 -0.8 -1.0
Base to Emitter Voltage, VBE(V)
Collector to Emitter Saturation
Voltage vs. Collector Current
IC=10 I
B
С
°
5
7
=
C
T
0
-1 -10 -100 -1,000
Collector Current, I
C
(mA)
-25°
С
°
5
2
С
Base to Emitter Saturation Voltage
-1.2
-1.0
-0.8
(V)
-0.6
BE(SAT)
V
-0.4
vs. Collector Current
IC=10I
B
T
С
°
5
2
-
=
C
С
°
5
2
С
°
5
7
-0.2
Base to Emitter Saturation Voltage,
0
-1 -3 -10 -30 -100 -300 -1000
Collector Current, I
C
(mA)
-240
-200
(MHz)
T
-160
-120
-80
-40
Gain Bandwidth Product, f
0
-10 -30 -100 -300 -1000
Gain Bandwidth Product
vs. Collector Current
VCE=5V
Ta=25°С
Collector Current, I
C
(mA)
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2SB649/A PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
(pF)
ob
(A)
C
Collector Current, I
Collector Output Capacitance, C
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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