UTC UTCXL1225, UTCML1225 Datasheet

XL/ML1225 SCR

UTC UNISONIC TECHNOLOGIES CO. LTD

1

DESCRIPTION

The XL1225/ML1225 silicon controlled rectifiers are high
performance planner diffused PNPN devices. These parts
are intended for low cost high volume applications.

TO-92

1

1:CATHODE 2:GATE 3:ANODE

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

PARAMETERS PART NO. SYMBOL TEST

CONDITION

MIN.

RATING

MAX.

RATING

UNITS

Repetitive Peak Off-State Voltage XL1225

ML1225

VDRM
VDRM

Tj=40 to 125°C

(rgk=1kΩ)

400
300

V

On-State Current IT(RMS) Tc=40°C 0.8 A
Average On-State Current IT(AV) Half Cycle=180,

Tc=40°C

0.5 A

Peak Reverse Gate Voltage VGRM IGR=10uA 1 V
Peak Gate Current IGM 10us Max. 0.1 A
Gate Dissipation PG(AV) 20ms Max. 150 W
Operating Temperature Tj -40 125 °C
Storage Temperature TSTG -40 125 °C
Soldering Temperature TSLD 1.6mm from case

10s Max.

250 °C

ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNIT

Off state leakage current IDRM @VDRM(RGK=1KΩ), Tj=125°C 0.1 mA
Off state leakage current IDRM @VDRM(RGK=1KΩ), Tj=25°C 1.0 µA

On state voltage VT AT IT=0.4A

AT IT=0.8A

1. 4

2.2

V

On state threshold voltage VT(TO) Tj=125°C 0.95 V

On state slops resistance Rt Tj=125°C 600 m

Gate trigger current IGT VD=7V 200 µA
Gate trigger voltage VGT VD=7V 0.8 V

Holding current IH RGK=1KΩ 5 mA

Latching current IL RGK=1KΩ 6 mA

Critical rate of voltage rise DV/DT VD=0.67*VDRM(RGK=1KΩ),

Tj=125°C

V/µs

Critical rate of current rise DV/DT IG=10mA, dIG/dt=0.1A/µs,

Tj=125°C

A/µs

Gate controlled delay time TGD IG=10mA, dIG/dt=0.1A/µs, 500 µs

Commutated turn-off time TG Tj=85°C, VD=0.67*VDRM,

VR=35V, IT=IT(AV)

200 µs

XL/ML1225 SCR

UTC UNISONIC TECHNOLOGIES CO. LTD

2

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNIT

Thermal resistance junc. to case Rθ JC K/W
Thermal resistance junc. to case Rθ JA K/W

CLASSIFICATION OF hFE

RANK B C AA AB AC AD

RANGE 50-100µA 100-200µA 8-15µA 15-20µA 20-25µA 25-50µA