UTC UTCMPSH10 Datasheet

UTC MPSH10 NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
1
TO-92
1: EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATING UNIT
Collector-base voltage V Collector-emitter voltage V Emitter-base voltage V Total Power Dissipation(Ta=25°C) Pc 250 mW Collector current Ic 50 mA Junction Temperature T Storage Temperature T
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-base breakdown voltage BV
Collector-emitter breakdown voltage BV
Emitter-base breakdown voltage BV
Collector cut-off current I
Emitter cut-off current I
Collector-emitter saturation voltage VCE(SAT) IC=4mA,IB=400µA 500 mV
Collector-emitter on voltage VCE(ON) VCE=10V,IC=4mA 950 mV
DC current gain hFE VCE=10V,IC=4mA,f=100MHZ 60
Output capacitace Cob VCE=10V,f=1MHZ 0.7 pF
Current gain bandwidth product fT VCE=10V,IC=4mA,f=100MHZ 650 MHZ
( Operating temperature range applies unless otherwise specified )
CBO CEO EBO
j
STG
(Ta=25°C,unless otherwise specified)
CBO CEO
EBO CBO EBO
Ic=100µA 30 V
Ic=1mA 25 V
IE=10µA 3 V
VCB=25V 100 nA
VEB=2V 100 nA
30 V 25 V
3 V
150 °C
-55 ~ +150 °C
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
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