UTC K596 N- CHANNEL JUNCTION FET
CAPACITOR MICROPHONE
APPLICATIONS
FEATURES
*Especially Suited for use in Audio, Telephone Capacitor
Microphones
*Excellent Voltage characteristic
*Excellent Transient Characteristic
1
TO-92SP
1:SOURCE 2:GATE 3. DRAIN
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATING UNIT
Gate Drain Voltage V
Gate Current IG 10 mA
Drain Current ID 1 mA
Power Dissipation PD 100 mW
Junctin Temperature Tj 125
Storage Temperature T
( Ta=25°C ,unless otherwise specified )
-20 V
GDO
-55~+125
STG
°C
°C
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Gate Drain Breakdown Voltage BV
Gate Source Cut off Voltage V
Drain Current I
Forward Transfer Admittance lYFSl VDS=5V,VGS=0,f=1KHz 0.4 1.2 mS
Input Capacitance C
Output Capacitance C
(Ta=25°C,unless otherwise specified)
I
GDO
GS(off)
V
DSS
V
ISS
VDS=5V,VGS=0,f=1MHz 0.65 pF
RSS
=-100µA
G
V
=5V,ID=1µA
DS
=5V,VGS=0 100 800
DS
=5V,VGS=0,f=1MHz 3.5 pF
DS
-20 V
-0.6 -1.5 V
µA
CLASSIFICATION OF I
RANK A B C D E
I
DSS
(µA)
100-170 150-240 210-350 320-480 440-800
DSS
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R207-001,A
1
UTC K596 N- CH ANNEL JUNCTION FET
TEST CIRCUIT(Ta=25°C)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Voltage Gain Gv VIN=10mV, f=1KHz -3 dB
Reduced Voltage Characteristic
Frequency Characteristic
Input Resistance Zin f=1KHz 25
Output Resistance ZO f=1KHz 700
Total Harmonic distortion THD VIN=30mV, f=1KHz 1 %
Output Noise Voltage VNO V
∆GvV
∆GvF
VIN=10mV, f=1KHz,
Vcc=4.5V->1.5V
f=1KHz to 110Hz -1 dB
=0, A CURVE -110 dB
IN
-1.2 -3.5 dB
MΩ
Ω
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R207-001,A
2