UTC UTCBT169 Datasheet

UTC BT169 SCR

DESCRIPTION

The UTC BT169 is glass passivated, sensitive gate
thyristors in a plastic envelope, intended for use in
general purpose switching and phase control
applications. These devices are intended to be
interfaced directly to microcontrollers, logic integrated
circuits and other low power gate trigger circuits.

1:CATHODE 2:GATE 3:ANODE

QUICK REFERENCE DATA

PARAMETER SYMBOL MAX(B) MAX(D) MAX(E) MAX(G) UNIT

Repetitive peak off-state voltages VDRM, VRRM 200 400 500 600 V
Average on-state current IT(AV) 0.5 0.5 0.5 0.5 A
RMS on-state current IT(RMS) 0.8 0.8 0.8 0.8 A
Non-repetitive peak on-state current ITSM 8 8 8 8 A

1

TO-92

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL CONDITIONS MIN MAX UNIT

Repetitive peak off-state voltages : VDRM,VRRM B:200

D:400
E:500
G:600

Average on-state current IT(AV) Half sine wave;

Tlead<=83°C
RMS on-state current IT(RMS) All conduction angles 0.8 A
Non-repetitive peak on-state current ITSM t=10ms

t=8.3ms

half sine wave;

Tj=25°C prior to surge
I2t for fusing I2t t=10ms 0.32 A2S
Repetitive rate of rise of on-state current
after triggering
Peak gate current IGM 1 A
Peak gate voltage VGM 5 V
Peak reverse gate voltage VRGM 5 V

DIT/dt ITM=2A;IG=10mA;

dIG/dt=100mA/µs

0.5 A

V

8

A

9

50 A/µs

UTC UNISONIC TECHNOLOGIES CO., LTD.

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UTC BT169 SCR

PARAMETER SYMBOL CONDITIONS MIN MAX UNIT

Peak gate power PGM 2 W
Average gate power PG(AV) Over any 20 ms period 0.1 W
Storage temperature Tstg -40 150 °C
Operating junction temperature Tj 125 °C

THERMAL RESISTANCES

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT

Thermal resistance junction to lead Rth j-lead 60 K/W
Thermal resistance junction to
ambient

ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise stated)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT

STATIC
Gate trigger current IGT VD=12V;IT=10mA;gate

Latching current IL VD=12V;IGT=0.5mA;

Holding current IH VD=12V;IGT=0.5mA;

On-state voltage VT IT=1A 1.2 1.35 V
Gate trigger voltage VGT VD=12V;IT=10mA;

Off-state leakage current ID,IR VD=VDRM(max) ;VR=VRRM(m

DYNAMIC
Ciritical rate of rise of off-state
voltage

Gate controlled turn-on time t

Circuit commutated turn-off time tq VD=67% VDRM(max) ;

Rth j-a pcb mounted;

lead length=4mm

open circuit

RGK=1kΩ

RGK=1kΩ

gate open circuit

VD=VDRM(max) ;IT=10mA ;

Tj=125°C; gate open circuit

ax) ;Tj=125°C;RGK=1kΩ

dVD/dt VDM=67% VDRM(max);

Tj=125°C; exponential

waveform;RGK=1kΩ

gt

ITM=2A;VD=VDRM(max);

IG=10mA;dIG/dt=0.1A/µs

Tj=125°C;ITM=1.6A;VR=35V

;dITM/dt=30A/µs;

VD/dt=2V/µs;RGK=1kΩ

150 K/W

50 200 µA

2 6 mA

2 5 mA

0.5

0.2

0.3

0.05 0.1 mA

25 V/µs

2 µs

100 µs

0.8 V

UTC UNISONIC TECHNOLOGIES CO., LTD.

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